JPS59219137A - Method of grinding surface of semiconductor substrate - Google Patents

Abstract

PURPOSE:To grind the surface of a semiconductor substrate by dressing a fixed super-grain blade by means of a dressor made of fixed aluminum-oxide group abrasive grains. CONSTITUTION:Before grinding the surface of a semiconductor substrate by the use of the blade 20 of a grinding wheel 2, this blade 20 of the grinding wheel 2 is dressed by means of a dressor 28 made of fixed aluminum-oxide group abrasive grains. The wheel 2 and the dressor 28 are relatively moved in directions nearly perpendicular to the axis of rotation of the wheel 2 and also parallel to the upper surface of the dressor 28. The dressor 28 is ground by means of the blade 20 of the wheel 2 and, thereby, the blade 20 is dressed. After this dressing operation, the surface of the semiconductor substrate is ground by means of the dressed blade 20 of the wheel 2.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for surface-grinding a semiconductor substrate using the JFi method, and more particularly to a method for surface-grinding a semiconductor substrate using a KIM superabrasive blade.

As is well known, in the production of semiconductor substrates, generally a substantially cylindrical ingot made of a semicircular material such as high-purity silicon, gallium arsenide, or gallium phosphide is produced, and then this ingot is sliced to an appropriate thickness. 4y approximately disk-shaped semiconductor substrates? generate. After that, both sides of each semiconductor substrate are subjected to abrasive processing, and then each semiconductor substrate is processed with abrasive grains. It is immersed in a suitable mixed acid solution and etched on both sides, and then one side of the valley semiconductor 17V-base is etched to give a mirror finish. On one side of the semiconductor substrate thus manufactured, that is, the mirror surface, a circuit is applied by printing or the like, or since the circuit has been applied, the other side of the semiconductor substrate is often further subjected to abrasive processing. , 1 abrasive grain force of ω1 of the semiconductor substrate, l) t: KM of both sides of the semiconductor board before applying the VC circuit, and in processing, it is generally important to make it a matte surface by processing the abrasive grains. It is considered. In general, the surface of a semi-sacrificial plate is rotated using a fixed superabrasive sound? When grinding, there is a fairly noticeable r9r on the ground surface.
iil'J-saw marks are produced, and such n-marks result in undesirable orientation in the semiconductor substrate.

So, in the past, free abrasive grains? Shinkai lapping was used to perform abrasive processing on both sides of semiconductor substrates. Lapping is usually done by interposing a lapping liquid containing loose 14Il abrasive grains between both sides of the semiconductor substrate and a lapping plate located opposite the other side, and separating the semiconductor substrate and the lapping plate from each other for a distance of 1 km. It is accomplished by forcing them to move relative to each other with pressure. According to such wrapping, the surface of the semiconductor device can be made into a matte surface with substantially no saw marks.

However, in the above lapping, (a) the work efficiency is considerably lower than when using fixed abrasive grains, and (b) the semiconductor substrate is contaminated by the lapping liquid, so the semiconductor substrate is relatively complicated to wrap. All washing and drying processes must be carried out; (c) automation is difficult;
There is a drawback or problem.

The present invention has been made in view of the above facts, and its main purpose is to provide a blade made of fixed rib abrasive grains. It is also possible to perform 1hi k grinding of a semiconductor substrate using a 1hi k grinding machine of a semiconductor substrate, and thus to perform ff1ik grinding of a semiconductor substrate in a manner that can be easily automated and with sufficient working efficiency without causing problems such as contaminating the semiconductor substrate. Regardless, a new and excellent method for grinding the surface of a semiconductor substrate that can make the polished surface have no or only a few saw marks when actually purchased. There is, the inventor method, Rushi is sharp and central exposure rJ↓
/1sa/-L fixed super abrasive 8 blade? Using semiconductor l
■(1) I thought that if I cut the surface of the semiconductor substrate with the blade, a fairly noticeable cut mark would inevitably be generated on the polished piece. Prior to this, the surface of the semiconductor substrate is dressed with a blade using a specific dresser, that is, a dresser made of fixed aluminum abrasive grains. Nine minutes good: +i!: That it can be ground to the ground? Found.

That is, according to Book 9+3, the method of grinding the semiconductor substrate using a rotationally driven blade made of a rectangular commercial abrasive grain; Prior to the fixed aluminum oxide thread abrasive blade by the dresser? A JJ method characterized by Dretsink 1 is provided.

T', i7i call, 1 drawing purple bathing, more (details, 1i
1 to 11 (brother)

FIG. 1 illustrates one embodiment of a wheel that may be used in the method of the present invention. The illustrated grinding i'4+3 wheel 2 has a rounded edge 4 and a cylindrical hanging portion 6 extending from the periphery of the base 40. A support member 8+d- is provided. The support member 8 is made of a suitable metal material such as aluminum.

The middle r9 part of the shield part 4 on the support part side 8 is
φ1 turn +1! Attachment place 1 to 11110. In the case shown,
The center of the base 4 has a penetrating opening 12 force≦J, and a small diameter portion 14 with a male screw force i formed on the secondary surface. Insert the small diameter part 14 into the υd opening] [1] and rotate the upper surface of the base 4
A nut 1 is attached to the protruding end of the small diameter portion 14 that abuts against the peripheral portion 16 of the opening 121j and protrudes through the opening 121j.
By layering 8, rotate till' I O &
This support part 8 is attached so as to be gradually removable.

A CJ and a flade 20 are provided at the free edge of the support part 8, that is, the vertical F part 6. This plate'2t) is
Fixed super (it is important that it is made of low grains. The super grains may be, for example, cubic boron nitride abrasive grains or similar grains, but
Preferably, it is a natural or synthetic tire. Diamond abrasive grain (1) number of grains, U.

S, metshu'? 1200 to 100, preferably
] 000 to 150, particularly preferably 80° knob to 2301. Super abrasive grains can be used by vitrified bond method using nickel, steel or (appropriate metal bonding @ machining metal 4) metal, or resinoid bond method using thermosetting 4nH resin binder. etc., and bond to obtain the rL formed on the blade 20. In particular, when the superabrasive grains are diamond abrasive grains, they can be conveniently bonded by a metal bonding method. When using the blade 20 made of metal bonded diamond abrasive grain, the blade 20 of a predetermined shape is used, as in the case of the blade 20 made of trisoid bonded or resinoid bonded superabrasive grain. This blade is formed and then coated with a suitable adhesive. It can be adhered to the support member 8 at a predetermined position. However, from the viewpoint of the strength of the blade 20, etc., is it necessary to use a known electrolytic solution containing nickel ions? Depending on the electrodeposition method used, the blade 20? It is preferable to fix it at the same time as forming it.

In the illustrated embodiment, the lower surface of the depending portion 6 of the support member 80 is turned downwardly and slanted radially outward. The blade 20 includes a fixed or bonded portion 22 that extends along the inner and lower surfaces of the hanging portion 6, and a free end portion 24 that extends downward and radially outward beyond the lower end of the outer surface of the hanging portion 6. and has. The angle α formed by the axis of rotation 26 of the blade 200 and the free end 24 of the blade 20 is lO
Suitably, the temperature is between 0 and 160 degrees, preferably between 110 and 150 degrees, particularly preferably between 120 and 14,011 degrees. If the angle α becomes too large, the so-called cutting edge of the semiconductor substrate by the blade 20 during grinding, which will be explained later, will decrease.
On the other hand, if the angle α becomes too small, the grinding resistance acting on the blade 20 during grinding, which will be explained later, will become excessive, and therefore the necessary stiffness of the blade 20 will become considerably large. blade 20
, in particular the thickness of its free end 24 is between 0.05 and 2.0
0mm.

Preferably, tTj< is in the order of 0.08 to 1.00, and %V is preferably in the range of 0.10 to 0.50 mm. If the awn becomes too thick, the blade 2 during grinding, which will be explained later.
The contact Ifj] product between 0 and the semiconductor substrate becomes thicker, which reduces the so-called cutting edge, and requires a relatively large amount of expensive superabrasive grains. On the other hand, if the thickness is too small,
The strength of the blade 20 becomes too low. Although not necessarily required, the blade 20 preferably has an annular shape that extends continuously over the entire circumference of the hanging portion 6 of the support member 8. If desired, the free end 24 of the blade 20 can be formed with several circumferentially spaced slots. If all such slots are formed, cooling water will flow through the slots +-i during grinding, which will be explained later. The grinding powder that has been removed from the semiconductor substrate can easily escape through the slot, thus making the grinding effect more effective. can be increased. If desired, the circumferential cross-sectional shape of the free end portion 24 of the blade 20 may be made wave-like, or two or more 20 blades may be disposed concentrically on the hanging portion 6 of the support member 8. You can also do it.

FIG. 2 illustrates another embodiment of a grinding wheel that may be used in the method of the invention. In this grinding wheel 2', the lower surface of the hanging portion 6' of the support member 8' rotates qq+
It extends substantially perpendicular to the + line 26'. and,
An annular plate-shaped blade 20' is provided along the lower surface of the hanging portion 6'. The grinding wheel 2' shown in FIG. 2 is substantially identical to the grinding wheel 2 shown in FIG. 1, except as noted above.

In the embodiment shown in FIGS. 1 and 2, a support member 8 or 8' with a cylindrical riding part 6 or 6' is used, and the depending part 6 or 6' is provided with a full blade 20 or 20'. However, instead of this, for example, a circular plate-shaped support part @
The annular free end or periphery of such a support member can also be graded.

In the method of the present invention, the surface of the semiconductor substrate is removed by the blade 20 or 2o of the above-mentioned grinding wheel 2 or 2'. Prior to grinding, the grinding wheel 2 or Vi2' Nof L is cut by a fixed aluminum oxide abrasive dresser.
It is important to dress to 20 or 20'.

An example of dressing the grinding wheel 2 to grade 20 will be described with reference to FIG. 3. Dresser 28 is held by a holder 30. The holder 30 shown in FIG. 1 holds a base 32 and a retaining plate 34 fixed on the base 32. The base 32, which may have a disk shape as a whole, has a circular recess 36 formed on its upper surface, and
A passage 38 is formed extending from the circular recess 36 in one direction.

Passageway 38 is connected to a suitable vacuum source (not shown). The holding plate 34 , which may be in the shape of a disc, has a main part 40 made of porous material and an annular outer part 42 fixed to the periphery of the main part 40 . The dresser 28 is fixed to the base 32 by being fixed to the upper surface, and the main part 40 covers the -)-Htl''1 part 36. Section 40 is increased by +3t.

When a vacuum source (not shown) is activated and closed, air is sucked out through the main portion 40, recess 36, and passage 38 of the holding plate 34, and the dresser 28 is thus suctioned and held on the holding plate 34. Ru.

It is important that the dresser 28 is formed by bonding grains of aluminum oxide thread, preferably grains of artificial crystalline aluminum oxide (alternate) thread.

As artificial crystalline aluminum oxide abrasive grains, those with the symbols A, 32A, and VVIAX (RA) are conveniently used.Artificial crystalline aluminum oxide abrasive grains can be heated to Bonding can be conveniently carried out by vitrified bonding, using a clay bonding agent that is formulated into a binder, or by resinoid bonding, using a thermosetting resin binder.

The grinding wheel 2 is rotated so that its axis of rotation 26 (FIG. 1) is substantially perpendicular to the top surface of the dresser 28, more specifically at the drain point indicated by arrow 44. 4 so that the lower end 48 (FIG. 1) of the blade 2o at the rear end is several tens of μm 8 degrees higher than the lower end 46 of the blade 2o at the front wheel when viewed in the direction of relative movement of the grinding wheel 2 with respect to the grinding wheel 28.
It is advantageous if the dresser 28 is arranged with its axis of rotation 26 (FIG. 1) slightly inclined relative to the upper surface of the dresser 28. -11 [cutting wheel 2ba, rotating shaft 1o
A drive source (not shown) such as an electric motor coupled to the drive source K rotates about the rotation line 1III. In addition, by moving the holder 3o in the direction shown by the arrow 5o, or alternatively/alternatively or additionally by moving the grinding wheel 2 in the direction shown by the arrow 44, the grinding wheel 2 and the dresser 28 is relatively moved in the directions shown by arrows 714 and 50, that is, in a direction substantially perpendicular to one axis around the grinding wheel 2 and actually parallel to the upper surface of the dresser 28. <
At this point, the blade 2o of the grinding wheel 2 causes the dresser 28 to be narrowed, thereby dressing the blade 2o. Blade 2 for dressing like this
0 peripheral speed, arrow 44 of grinding wheel 2 and dresser 28
1-1 relative movement speed (in the direction indicated by and 5o) and the grinding depth Ll can be set as desired.

The dressing method of the blade 2o is not limited to the above-mentioned method, but a desirable one is to rotate and drive the dresser instead of or in addition to rotating and driving the Jf cutting boiler 2. can also be used, and also the blade 2 of the grinding wheel 2 which is rotatably driven
Dressing can also be carried out by a stick method in which a bar-shaped dresser is manually pressed against the surface of the cloth.

In the method of the present invention, after the above-mentioned dressing,
0 to grind the surface of the semiconductor substrate.

FIG. 4 shows an example of a manner in which the surface of the semiconductor substrate 52 is ground by the blade 20 of the grinding wheel 2. As shown in FIG.

By comparing and referring to Figure 3 and Figure 4, Ii,! ! Grinding can be accomplished in a manner similar to dressing and purchasing as described above, i.e., a generally circular disk made of a suitable semi-proprietary dressing material such as high purity silicon, potassium arsenide or gallium phosphide. The semiconductor substrate 52, which can be placed face down, is placed with the holder 3 facing upwards.
The grinding wheel 2 is mounted (m) on the holding plate 34 of 0 and is thus held by suction on the holding plate 34.
(More specifically, the relative movement of the grinding wheel 2 with respect to the semiconductor substrate 52 as indicated by the arrow 44 so that i (FIG. 1) is approximately perpendicular to the upper surface of the semiconductor substrate 52. The rotation axis 26 (first It is convenient to arrange the grinding wheel 2 by tilting it (Fig.).
The awn is driven to rotate about its rotational axis 26. In addition, by moving the holder 30 in the direction shown by the arrow 50, or alternatively or in addition to this, by moving the grinding wheel 2 in the direction shown by the arrow 44, the grinding wheel 2 and the semiconductor substrate can be separated. 52 refers to the direction indicated by arrows 44 and 50, that is, the rotating shaft edge 26 of the grinding wheel 2.
The semiconductor substrate 52 is relatively moved in a direction substantially perpendicular to and substantially parallel to the upper surface of the semiconductor substrate 52. Thus, the upper surface of the semiconductor substrate 52 is ground by the blade 20. The circumferential speed of the free end of the blade 20 for removing ω1 such as force 1 is, for example, the (
In IJ + cutting, generally 1.2007'J to 300
0m/+ river, preferably i'l: 300 to 20.00
m/ah, chant: preferably 400 to 1300
It is appropriate that the diameter is 7 mm, and the circuit is applied to one side with a mirror surface, and the other side of the semiconductor substrate is temporarily placed [
In machining, generally 1000 to 6000rn/
RjR1 preferably 2000 to 5000 m/a'
Deroono〃) is appropriate. It is generally desirable that the relative displacement of the grinding wheel 2 and the semiconductor substrate &52 in the directions indicated by arrows 44 and 50 be less than 1000 g/mi. The IJt cutting depth t2 can be appropriately set depending on the floating bladder of the semiconductor substrate 52 to be reduced by grinding. In general, it is set to 10 to 20 μm in total, and in the case of <u+ F) IJ on the other side of the semiconductor substrate after circuits are applied to one side of the semiconductor substrate, Generally, the thickness is set to several μm to several hundred μm.

In the 3g case using the grinding wheel 2' shown in FIG. 2, the plate 20' can be dressed and the surface of the semiconductor substrate &52 can then be ground in the same manner as described above.However, When using the grinding wheel 2' shown in FIG. 1 in FIG. 2, due to the relatively large contact area between the semiconductor substrate 52 and the blade 20',
There is a tendency for the grinding depth tf to break at a few μm (61j).

As is clear from the embodiments described above, the method of the present invention described above has the disadvantage that the surface of the semiconductor substrate 52 is ground so that there are no saw marks or, if any, there are only a few saw marks. It is possible to obtain a sufficiently good pear surface.

After dressing the blade 20 or 20' half 4)
When the surface of the body substrate 52 is repeatedly ground many times (for example, about 1000 times), saw marks tend to gradually appear on the ground surface.
0 or 20' may be redressed.

Next, examples and comparative examples of the present invention will be described.

Example []] A grinding wheel having the form shown in FIG. 1 was produced by electrodeposition 1 and subsequent melting process. In more detail, in the electrodeposition process, an electrolyte containing nickel ions is used.
A nickel plate was immersed in the S solution to serve as an anode. Also,
An aluminum support member integrally formed with an annular protrusion as shown by the two-dot chain line 54 in FIG. 1 is entirely coated with an insulating material except for the inner and lower surfaces of the hanging portion and the inner surface of the protrusion. 1 to 1, it was immersed in the electrolytic solution in an inverted state, and this was used as a cathode. In the electrolytic solution, prior to the start of electrolysis, particles of synthetic diamond with U, S and mesh numbers of 400 were stirred and suspended. Then start the electrolysis and by gravity onto the uncovered part of the support member! The abrasive grains were bonded with the precipitated nickel, thus forming a blade. In the dissolution step, the support member with the formed blade is removed from the liquid;
The insulating material coating was removed only from the outer surface of the protrusion of the support member, and after t, the support member was immersed in a caustic soda solution. In this way, the protrusion of the support member was dissolved and removed. Thereafter, the support member was removed from the caustic soda solution and any remaining am material coating was removed, thus producing the trace grinding wheel shown in FIG.

The thickness of the free end of the blade in the manufactured T-grinding wheel is 0.30 tran, the angle α formed by the axis of rotation and the free end of the blade (Fig. 1) is 135 mm, and the free end of the blade is The outer diameter of the end was 200 mm.

The blade of the abrasive wheel was dressed in a back-and-forth manner as described with reference to FIG. In this case, WA32ONB (i.e., U,
S, dresser with mesh number 320 WA abrasive grains resinoid bonded with bonding degree N), floating stones 4 mm, outer diameter 4
A disk-shaped dresser manufactured by Inches was used. The peripheral speed of the free end of the blade was 1250 m/-. Move the holder holding the dresser in the direction indicated by arrow 50 by 150 I+1
M/grin was able to move it quickly. Grinding deep field; t1
Cooling water was injected into the grinding area where □ was 510 mm.

After the above-mentioned dressing, one side of the Silicon Ueno S (semiconductor substrate made of high-purity silicon) was ground by the bending method described with reference to FIG.

For this purpose, the circumferential speed of the free end of the blade is 1250 m/
It was mip+. The holder holding the silicon wafer was moved in the direction indicated by the arrow 50 at a speed of 50 m/=x. The grinding depth L2 was 15 μm. Cooling water was injected into the grinding area.

FIG. 5 is a 200 times enlarged photograph showing the surface of a silicon wafer ground as described above. As is clear from FIG. 5, the polished surface was a satin surface with substantially no saw marks.

The above embodiment [1] except for the various rides shown in Table 1 below
In the same manner as above, one side of the silicon wafer was ground.

The ground surface of the silicon wafer was struck by a saw mark similar to the surface shown in Figure 5, or by a pear-shaped surface that did not have the same shape as the surface shown in Figure 5.

(Note 1) U, S, dresser with mesh number 80 RA abrasive grains resinoid-bonded with bonding degree N. (Note 2) U, S,
Dresser (Note 3) in which A abrasive grains with a mesh number of 150 are resinoid-bonded with a bonding degree of N. Dresser (Note 4) in which WA abrasive grains with a mesh number of 320 are resinoid-bonded with a bonding degree of N (Note 4) IJ, 8° Example 6 of a dresser in which WA abrasive grains with a mesh number of 150 were vitrified bonded [6] U, S, and synthetic diamond abrasive grains with a mesh number of 320 were used, and the formed blade had the freedom As shown in FIG. 6, the circumferential interval t is 1.
A grinding wheel was manufactured in substantially the same manner as in Example [1], except that it had a slot 56 formed with a length of 5 m, a diameter W of one gate, and a depth d of 1 mm.

Next, the dresser used was RA8ONB (i.e. U,
S, the mesh number is 80 RA abrasive grains bonded [N resinoid bonded dresser], and the peripheral speed of the free end of the blade is 650? The grade of the grinding wheel was dressed in the same manner as in Example [1] except that it was F1 No. and the moving speed of the holder was 80 mn/m.

After that, the circumferential speed of the free end of the blade is 650ffI/
am, and the moving speed of the holder is 80 mm1-t.
*One side of a silicon wafer was ground in the same manner as in Example [1] except for the above.

The ground surface of the silicon wafer was a matte surface with substantially no saw marks, similar to the surface shown in FIG.

Example [7] Synthetic diamond abrasive grains with U, S, mesh number 400 are resinoid bonded to form a blade, and such blade is then adhered to a support member, thus forming a grinding wheel as illustrated in FIG. Manufactured. The outer diameter of the blade is 200 mm, the inner diameter of the blade is 199 mm,
The blade speed was 2 minutes, and then the blade of the grinding wheel was dressed in the same manner as in Example [1].

Thereafter, one side of the silicon wafer was ground in the same manner as in Example [1] except that the grinding depth t2 was 3 μm.

Figure 7 shows two surfaces of the thus ground silicon wafer.
This is a photograph enlarged 00 times. As is clear from Fig. 8, the ground surface was a matte surface with some saw marks.

Comparative Example [1] A dresser using the same grinding wheel blade as the grinding wheel of Example [1] was GC320LV (i.e., Green Carhon Rantum X with U, S, mesh number 320: i Vessel'', @1 current 17 with hydrinooid bond and f(-dresser) with small iIJ, Example 11.1 and times ()7 with -C dressing (~).

After that (1'c, full implementation) One side of the silicon wafer was ground in the same manner as in [1].

Figure 8 shows the state of the silicon wafer thus ground.
This is a photograph shown at 00x magnification. As is clear from Figure 8, the ground surface was a rough surface with noticeable saw marks.

FIG. 1 is a sectional view showing one embodiment of a grinding wheel that can be used in the method of the present invention.

FIG. 2 is a sectional view showing another specific example of an I0F cutting wheel that can be used in the method of the present invention.

FIG. 3 is a partial cross-sectional view illustrating one example of the manner in which the blade of the grinding wheel of FIG. 1 may be dressed in accordance with the present invention.

FIG. 4 shows an example of the manner in which, according to the present invention, the blade is dressed/grinded by the grinding f'ill = t = eel I/C shown in FIG. The childish 1
115 molecule elt surface diagram.

FIG. 5 is a small photograph of the surface of the silicon wafer ground in Example [1], magnified 200 times.

FIG. η16 is an enlarged partial front view showing the free end of the blade of the grinding wheel that was changed once in Example [6].

7th M is ill-like 7 in fire/I cloth example [7]
Figure 8 t shows the image of the silicon wafer magnified 200 times. Photo showing people.

2 and 2'...Grinding wheel 8 and 8'...Supporting member 2() and 20...Blade 30... Holder 28...Doresoya 52...Semi-cotton board Patent applicant Disco Co., Ltd. i

Claims (1)

[Claims] 1. A method of grinding the surface of a semiconductor substrate with a fixed superabrasive blade driven by a rotationally driven 6; prior to grinding the surface of the semiconductor substrate, a fixed aluminum oxide abrasive is Dressing the blade with a manufactured dresser? How to characterize it. 2. When grinding the surface of the semiconductor substrate, arrange the blade so that the axis of rotation of the blade is approximately IK with respect to the surface of the semiconductor substrate, and then grind the same blade and the semiconductor substrate. The blade is moved in a direction perpendicular to the axis of rotation of the blade, and when dressing the blade, the blade is moved relative to the rotation axis in substantially the same manner as when grinding the surface of the semiconductor substrate. The method according to claim 1, wherein the grade and the dresser are relatively moved f71' in a direction substantially perpendicular to the axis of rotation of the blade while rotating about the axis.3. is made of fixed diamond abrasive grains. 4. The particle size of the diamond abrasive grains in the fixed diamond abrasive grains is 1200 to 100 in terms of U, S, and mesh number.
The method according to claim 3, wherein: 5. The method according to claim 4, wherein the diamond abrasive grains have a particle size of 1000 to 150 in terms of U, S, and mesh number. 6. The method according to claim 5, wherein the diamond abrasive grains have a particle size of 800 to 230 in U, S, and mesh numbers. 7. Claims 1 to 6, wherein the blade is provided at the free edge of the supporting member that is rotatably driven.
The method described in any of paragraphs 1 to 1. 8. Claim 7, wherein the blade has an annular shape that is sharpened over the entire circumference of the annular free end edge of the supporting member.
The method described in section. 9. The method according to any one of claims 1 to 8, wherein the grade is formed by electrodepositing superabrasive grains and forcing them into a predetermined shape. 10. The method according to any one of claims 1 to 8, wherein the flade is formed by metal-bonding superabrasive grains to form a predetermined shape. 11. According to any one of claims 1 to 10, at least the free end 'fA of the blade extends at an angle αr which is between 100 and 160 degrees with respect to the rotational purity of the blade. J2. The angle αl”,j
llo to 15011"?1',5ru,% s+The method according to claim 11. 13. The angle α is 120 to 140 degrees, q publication rl
- The method according to claim 12, 14, wherein the thickness of the free end of the blade is 0.05 to 2,000 m, Claim **, any one of claims 11 to 13. The method described in 15. The thick pregnancy ranges from 0.08 to 1. 15. The method of claim 14, wherein the method is OOwn. 16. The method according to claim 15, wherein the H degree is 0.10 to 0.50. 11. The method according to claim 2, wherein the relative moving speed between the blade and the semiconductor substrate is 1000 m++/- or less. 18. The method according to any one of claims 1q to 17, wherein the semiconductor substrate is made of silicon.