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JPS59155922A - Device for depositing metal by laser - Google Patents

Device for depositing metal by laser

Info

Publication number
JPS59155922A
JPS59155922A JP58030305A JP3030583A JPS59155922A JP S59155922 A JPS59155922 A JP S59155922A JP 58030305 A JP58030305 A JP 58030305A JP 3030583 A JP3030583 A JP 3030583A JP S59155922 A JPS59155922 A JP S59155922A
Authority
JP
Japan
Prior art keywords
metal
light
laser
excitation
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58030305A
Other languages
Japanese (ja)
Inventor
Kunihiko Washio
鷲尾 邦彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58030305A priority Critical patent/JPS59155922A/en
Publication of JPS59155922A publication Critical patent/JPS59155922A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72Repair or correction of mask defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemically Coating (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To ensure monitoring of film thickness by a method wherein when a sample substrate is attached to a window of a cell containing metal complex solution and is irradiated with laser beam for excitation to deposit metal on the back surface of the substrate, laser beam for probe is projected into simultaneously to detect state of deposition of metal by permeable ray of the probe light. CONSTITUTION:Emitted light rays from a source 1 of laser beam for excitation and a source 2 of laser beam for probe are lapped in parallel by a beam compounding device 3 and are projected into a sample substrate 5 attached to a window of a solution cell 6 through a light collecting optical system 4 comprising a microscopic observing optical system 7. The cell 6 is filled with benzene solution including bisbenzene Mo metal complex of 10<-2>-10<-1>mol/l of concentration and the cell 6 is adjusted minutely by using a driving device 8. Meanwhile on the opposite side to the substrate 5 in the cell 6, a filter 9 and a light detector 10 are arranged to detect the film thickness of metal deposited on the back surface of the substrate 5. After that, a chopper 11 arranged on an optical path of the source 2 and the light detector 10 are connected to a controller 13 through a lock-in amplifier 12 and the output is returned to the laser source 1.

Description

【発明の詳細な説明】 この発明はレーザ光を用いて試料基板上に金属を堆積さ
せるレーザ金属堆積装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a laser metal deposition apparatus for depositing metal on a sample substrate using laser light.

集積回路等の発達に伴い、微細な領域への局所的金属堆
積技術が必要とされるようになってきた。
BACKGROUND OF THE INVENTION With the development of integrated circuits, etc., local metal deposition techniques in minute areas have become necessary.

例えば、集積回路用のフォトマスクには、目づまシ欠陥
(黒色欠陥)のほかに、穴あき欠陥(白色欠陥)などを
生じることがあるため、フォトマスク上にクロムやモリ
ブデンなどの金属を局所的に堆積させて、この穴あき欠
陥を塞ぐことが必要となる。とくに、ステップ・アンド
・リピート方式に用いられるレテ多ルにおっては、ただ
一つの欠陥の存在も許されないため、穴あき欠陥の修正
は、フォトマスクの生産性向上の観点から是非とも必要
な技術となってきている。
For example, in addition to blind defects (black defects), hole defects (white defects) may occur in photomasks for integrated circuits, so metals such as chromium and molybdenum are locally applied onto the photomask. It is necessary to fill this hole by depositing a large amount of material. In particular, the presence of even a single defect is not tolerated in the reticle used in the step-and-repeat method, so repairing hole defects is absolutely necessary from the perspective of improving photomask productivity. It has become a technology.

このため、近年、レーザ光のもつ集光性と高輝度性とを
利用しだレーザ金属堆積装置が種々提案され、その実用
化が試みられるようになってきた。
For this reason, in recent years, various laser metal deposition apparatuses have been proposed that take advantage of the light focusing and high brightness properties of laser light, and attempts have been made to put them into practical use.

このレーザ金属堆積技術には、大別すると気相からの堆
積と液相からの堆積の2方式がある。気相からの堆積は
、ドライプロセスとして将来性がちシ有望視されている
ものの、多くの金属化合物気体はその取扱いが危険で、
かつ厄介であることや、気相からの堆積速度があまり速
くないことなどのために、現在は主に液相からの堆積に
ついてその実用化研究が進められている。
This laser metal deposition technology can be roughly divided into two methods: deposition from a gas phase and deposition from a liquid phase. Although deposition from the gas phase has a promising future as a dry process, many metal compound gases are dangerous to handle;
Because it is troublesome and the rate of deposition from the gas phase is not very fast, research is currently being carried out to put deposition into practical use mainly from the liquid phase.

この液相からの金属堆積法としては、ビスベンゼンモリ
ブデンなどの金属錯体の溶液を用い、この金属錯体溶液
に強いレーザ光を照射して金属を遊離せしめ、これによ
シ試料基板上に金属を堆積させるという方法が、安全か
つ簡便な方法として、最近注目を浴びるようになってき
ている。
This metal deposition method from the liquid phase uses a solution of a metal complex such as bisbenzene molybdenum, irradiates the metal complex solution with strong laser light to liberate the metal, and thereby deposits the metal onto the sample substrate. Recently, the method of deposition has been attracting attention as a safe and simple method.

しかし、従来の液相からの金属堆積装置にあっては、金
属の堆積過程をよくモニターできなかったために、堆積
膜厚が不揃いであったシ、穴あき欠陥の塞ぎ方が不充分
であったりするなど、信頼性、操作性彦どの点で難点が
あった。即ち、従来のレーザ金属堆積装置においては、
試料基板に堆積した金属によるレーザ光の反射光をモニ
ターしていたが、これではごく微小なピンボールなどが
残存していた場合にこれを見落してしまうという欠点が
ある1、なお、反射光をモニターする代シに励起光の透
過光をモニターする。ことも原理的に可能ではあるが、
励起レーザ光の波長は金属錯体溶液の吸収帯域内で選ぶ
ようにするから、その溶液によ)励起光が強く吸収され
、光検知器を試料基板よシ離しておくことが出来ず、装
置の構成に自由度がなくなるという欠点がある。
However, with conventional metal deposition equipment from the liquid phase, it was not possible to monitor the metal deposition process well, resulting in uneven deposited film thickness and insufficient filling of hole defects. However, there were some drawbacks in terms of reliability and operability. That is, in the conventional laser metal deposition apparatus,
The reflected light of the laser beam from the metal deposited on the sample substrate was monitored, but this method has the drawback of overlooking the presence of extremely small pinballs. In addition to monitoring the excitation light, the transmitted light is monitored. Although it is possible in principle,
Since the wavelength of the excitation laser light is selected within the absorption band of the metal complex solution, the excitation light is strongly absorbed by the solution, making it impossible to keep the photodetector separate from the sample substrate, and causing problems with the equipment. The disadvantage is that there is no freedom in configuration.

本発明の目的は、これら従来の欠点を除去し、金属膜厚
をモニターできる高信頼度なレーザ金属堆積装置を提供
することにある。
An object of the present invention is to eliminate these conventional drawbacks and provide a highly reliable laser metal deposition apparatus that can monitor metal film thickness.

本発明の構成は、励起用レーザ光源と、この励起用レー
ザ光源からの励起光を集光する集光光学系と、この集光
された励起光が窓材として用いられる試料基板を通して
入射される金属錯体溶液セルとを備え、前記入射光にょ
シ前記金属錯体から゛金属を遊離させて前記試料基板上
の所望の位置にその金属を堆積させるレーザ金属堆積装
置において、前記励起用レーザ光源とは発振波長が異な
るグローブ用レーザ光源と、このグローブ用レーザ光源
からのグ?−プ光を前記励起光と平行に重ね合わせて前
記溶液セルに入射せしめるだめのビーム合成器と、前記
試料基板を透過したプローブ光を前記試料基板の入射光
に対する後方に金属錯体溶液を介在させて検知する光検
知器とを備えたことを特徴とする。
The configuration of the present invention includes an excitation laser light source, a condensing optical system that condenses excitation light from the excitation laser light source, and a condensed excitation light that is incident through a sample substrate used as a window material. A laser metal deposition apparatus comprising a metal complex solution cell, in which the incident light liberates metal from the metal complex and deposits the metal at a desired position on the sample substrate, wherein the excitation laser light source is A glove laser light source with different oscillation wavelengths and a glow from this glove laser light source? - a beam combiner that superimposes the probe light in parallel with the excitation light and makes it enter the solution cell; and a metal complex solution that interposes the probe light transmitted through the sample substrate with a metal complex solution behind the sample substrate with respect to the incident light; The invention is characterized in that it is equipped with a photodetector for detecting.

次にこの発明を図面によシ詳細に説明する。Next, the present invention will be explained in detail with reference to the drawings.

図はこの発明の一実施例の模式的構成を示すブロック図
である。励起用レーザ光源1とプローブ用レーザ光源2
よシ出射したレーザ光は、ビーム合成器3によシ平行に
重ね合わされ、集光光学系4によシ集光され、窓材とし
て用いられている試料基板5を介して溶液セル6内に入
射する。この溶液セル6内には、濃度1o−2〜10−
1モル/ノ程度のビスベンセンモリブデン金属錯体を溶
がしたベンゼン溶液が満たされており、これにょフその
試料基板5の裏面は金属錯体溶液に浸されている。
The figure is a block diagram showing a schematic configuration of an embodiment of the present invention. Excitation laser light source 1 and probe laser light source 2
The emitted laser beams are superimposed in parallel by a beam combiner 3, focused by a condensing optical system 4, and then entered into a solution cell 6 via a sample substrate 5 used as a window material. incident. This solution cell 6 contains a concentration of 1o-2 to 10-
It is filled with a benzene solution in which approximately 1 mol of bisbenzene molybdenum metal complex is dissolved, and the back surface of the sample substrate 5 is immersed in the metal complex solution.

この試料基板5へのレーザ光の照射位置は、顕微観察光
学系7でその試料基板5の裏面上に設けられたパターン
を観測しながら駆動装置8を用いてその溶液セル6を微
動調整することにより位置決めされる。
The irradiation position of the laser beam onto the sample substrate 5 is determined by finely adjusting the solution cell 6 using the driving device 8 while observing the pattern provided on the back surface of the sample substrate 5 using the microscope observation optical system 7. Positioned by

一方、光源2からのグローブ光は、グローブ光を選択的
に透過するフィルタ9を介して光検知器10で検知され
る。このグローブ光はチョッパー11によシ断続光にさ
れておシ、光検知器10に入射したグローブ光は、ロッ
クインアンプ12で高感度に検知される。このロックイ
ンアンプ12の出力は、コン10−ラ13を介して励起
用レーザ光源1に伝達されてプローブ光が光検知器1゜
で検知されなくなると励起用レーザ光源1の発振を停止
するように動作させる。
On the other hand, the globe light from the light source 2 is detected by a photodetector 10 via a filter 9 that selectively transmits the globe light. This globe light is made into intermittent light by a chopper 11, and the globe light incident on the photodetector 10 is detected with high sensitivity by a lock-in amplifier 12. The output of this lock-in amplifier 12 is transmitted to the excitation laser light source 1 via the controller 10-13, and when the probe light is no longer detected by the photodetector 1°, the oscillation of the excitation laser light source 1 is stopped. make it work.

この実施例では、励起用レーザ光源1としては、ビスベ
ンセンモリブデン金属錯体に強い吸収がある波長483
mmのアルゴンレーザ(出力100m w )が用いら
れ、グローブ用レーザ光源2としては、金属錯体の吸収
が弱く比較的透明な、近赤外域で発振するA7GaAs
ないしInGaAsPなどの半導体レーザが用いられる
。また、フィルター9は、グローブ光のみを選択的に透
過させるようにした狭帯域な帯域フィルタが用いられて
いる。
In this embodiment, the excitation laser light source 1 uses a wavelength of 483, which has strong absorption in the bisbenzene molybdenum metal complex.
mm argon laser (output 100 mw) is used, and as the glove laser light source 2, A7GaAs, which has weak absorption of metal complexes and is relatively transparent, oscillates in the near-infrared region.
Or a semiconductor laser such as InGaAsP is used. Further, the filter 9 is a narrowband filter that selectively transmits only the globe light.

この励起用レーザ光源1からの強い励起光が溶液セル6
内に入射すると、金属錯体がこれを強く吸収するため金
属錯体より金属が遊離し、この遊離した金属が試別基板
5上のレーザ光照射領域に局所的に堆積する。この金属
は不透明なため試料基板5上で十分厚く堆積するとグロ
ーブ光が透過しなくなるので、グローブ光が検知器10
で検知されなくなったときに励起光の照射を止めてよい
ことを確実に判断できる。これによってレーザ励起光を
不必黴に長時間照射することか避けられ、また逆に励起
光の照射時間が短かすぎ1ピンホール欠陥を残すような
ことも避けられるようになる。
This strong excitation light from the excitation laser light source 1 is applied to the solution cell 6.
When the laser beam enters the laser beam, the metal complex strongly absorbs it, so that the metal is liberated from the metal complex, and this liberated metal is locally deposited on the laser beam irradiation area on the sample substrate 5. Since this metal is opaque, if it is deposited sufficiently thickly on the sample substrate 5, the globe light will not pass through it.
When the excitation light is no longer detected, it can be reliably determined that the excitation light irradiation can be stopped. This makes it possible to avoid unnecessary irradiation of laser excitation light onto mold for a long time, and conversely, it is also possible to avoid cases where the irradiation time of excitation light is too short and leaves one pinhole defect.

この実施例では、金a錯体として低励起入力で金属を遊
離しうるビスベンゼンモリブデンを用い7’cが、jれ
Kllらfビスベンゼンクロムや、マンガンアンミン錯
塩などの金属錯体を必要に応じて用いることができる。
In this example, bisbenzene molybdenum, which can liberate the metal with low excitation input, was used as the gold a complex, and metal complexes such as bisbenzene chromium and manganese ammine complex salts were added as necessary. Can be used.

また、この実施例に用いた構成要素を本発明の趣旨を逸
脱せずに代替することができ、例えば、本実施例では前
記試料基板5上の照射位置決め用として、駆動装置8を
用いて溶液セル6を駆動したが、この代りにレーザ光走
査光学系を新たに設け、レーザ光の方を走査するように
するとともできる。
Further, the components used in this embodiment can be replaced without departing from the spirit of the present invention. For example, in this embodiment, the driving device 8 is used to position the irradiation on the sample substrate 5. Although the cell 6 is driven, a new laser beam scanning optical system may be provided instead, and the laser beam may be used for scanning.

【図面の簡単な説明】[Brief explanation of drawings]

図は本発明の一実施例の模式的構成を示すブロック図で
ある。図において、
The figure is a block diagram showing a schematic configuration of an embodiment of the present invention. In the figure,

Claims (1)

【特許請求の範囲】[Claims] 励起用レーザ光源と、この励起用レーザ光源からの励起
光を集光する集光光学系と、この集光された励起光が窓
材として用いられる試料基板を通して入射される金属錯
体溶液セルとを備え、前記入射光によシ前記金属錯体か
ら金属を遊離させて前記試料基板上の所望の位置にその
金属を堆積させるレーザ金属堆積装置において、前記励
起用レーザ光源とは発振波長が異なるプローブ用レーザ
光源と、このプローブ用レーザ光源からのグローブ光を
前記励起光と平行に重ね合わせて前記溶液セルに入射せ
しめるビーム合成a)と、前記試料基板を透過したプロ
ーブ光を前記試料基板の入射光に対する後方に前記金属
錯体溶液を介在させて検知する光検知器とを備えたこと
を特徴とするレーザ金属堆積装置。
An excitation laser light source, a condensing optical system that condenses excitation light from the excitation laser light source, and a metal complex solution cell into which the condensed excitation light enters through a sample substrate used as a window material. a laser metal deposition apparatus for liberating metal from the metal complex by the incident light and depositing the metal at a desired position on the sample substrate; A laser light source, beam synthesis a) in which the globe light from the probe laser light source is superimposed in parallel with the excitation light and made to enter the solution cell, and the probe light transmitted through the sample substrate is combined with the probe light incident on the sample substrate. A laser metal deposition apparatus comprising: a photodetector that detects the metal complex solution by interposing the metal complex solution behind the metal complex solution.
JP58030305A 1983-02-25 1983-02-25 Device for depositing metal by laser Pending JPS59155922A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58030305A JPS59155922A (en) 1983-02-25 1983-02-25 Device for depositing metal by laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58030305A JPS59155922A (en) 1983-02-25 1983-02-25 Device for depositing metal by laser

Publications (1)

Publication Number Publication Date
JPS59155922A true JPS59155922A (en) 1984-09-05

Family

ID=12300040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58030305A Pending JPS59155922A (en) 1983-02-25 1983-02-25 Device for depositing metal by laser

Country Status (1)

Country Link
JP (1) JPS59155922A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0193673A2 (en) * 1985-03-01 1986-09-10 Gould Inc. Apparatus for photomask repair

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0193673A2 (en) * 1985-03-01 1986-09-10 Gould Inc. Apparatus for photomask repair

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