[go: up one dir, main page]

JPS59117223A - Method for removing burrs from semiconductor plastic packaging resin - Google Patents

Method for removing burrs from semiconductor plastic packaging resin

Info

Publication number
JPS59117223A
JPS59117223A JP22631482A JP22631482A JPS59117223A JP S59117223 A JPS59117223 A JP S59117223A JP 22631482 A JP22631482 A JP 22631482A JP 22631482 A JP22631482 A JP 22631482A JP S59117223 A JPS59117223 A JP S59117223A
Authority
JP
Japan
Prior art keywords
package
resin
lead frame
laser beam
irradiating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22631482A
Other languages
Japanese (ja)
Inventor
Joichiro Kageyama
景山 條一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Semiconductor Package and Test Solutions Co Ltd
Original Assignee
Hitachi Ltd
Hitachi Yonezawa Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Yonezawa Electronics Co Ltd filed Critical Hitachi Ltd
Priority to JP22631482A priority Critical patent/JPS59117223A/en
Publication of JPS59117223A publication Critical patent/JPS59117223A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To dissolve the problem of generation of powdery dust, etc., to be generated when a flash is removal according to high speed jet of a powdery matter by a method wherein a laser beam is irradiated to the flash. CONSTITUTION:The unnecessary flashes 30, 31 of a semiconductor IC package 1 are molten to be evaporated and removed by irradiating to package leads 2 a laser beam 5 adjusting output, the irradiating diameter, the irradiating hours thereof as to make the temperature to satisfy the condition that the resin melting temperature is smaller than the lead frame material melting temperature in the condition that the package is sheltered by a mask 4. As the lead frame material, the metal frame of 42 alloy material, etc., are used mainly, while it is necessary to irradiate the laser beam within the extent not to apply deformation and abnormality to the lead frame material thereof. As the laser beam 5, any of YAG laser, CO2 laser, etc., having the wavelength in the extent not to transmit through the resin is favorable. Moreover because the resin flashes are generated on both sides of the package 1, it is necessary to irradiated again by turning the beam from side of side when the beam is irradiated from one direction, while it may be also favorable to irradiate at the same time from both the sides.

Description

【発明の詳細な説明】 本発明は半導体、IC(集積回路)プラスチックパッケ
ージのモールド時において発生するパンケージリードフ
レーム周辺のレジンパリのレザー光による除去方法に関
する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for removing resin particles around a pan cage lead frame, which are generated during molding of semiconductor and IC (integrated circuit) plastic packages, using laser light.

半導体パッケージにはセラミックタイプ、サーディツプ
タイプ、プラスチックタイプ等各種の種類があるが、プ
ラスチックタイプは一般にリードフレームにチップをマ
ウント後、ワイヤポンディング;、次いでモールド金型
に入れてエポキシ樹脂等のレジンを使用してトランスフ
ァモールドする方式がとられている。
There are various types of semiconductor packages, such as ceramic types, cerdip types, and plastic types.Plastic types generally involve mounting the chip on a lead frame, then wire bonding, then putting it in a mold and using epoxy resin, etc. A method of transfer molding using resin is used.

この際にパッケージ外周のリードフレーム部にレジンバ
リが発生する。このレジンモールド時に生じるパリは型
加工精度上より不可避な現象である。従来このパリの除
去は通常クルミ粉の高速噴射により破砕し叩き落す方法
によっているが、帯電したクルミ粉がパッケージに付着
するため除去する必要が出てくる。この除去作業には手
間を要する。その上粉体の事前の乾燥保管管理な充分に
せねばならない他室全面でも粉塵のため防塵防爆の留意
が必要である等取扱が難しい。又パッケージの保護のた
めのマスクも高速噴射により摩耗し易いため長期間使用
できないとい58i点があった。
At this time, resin burrs occur on the lead frame portion around the outer periphery of the package. The cracks that occur during resin molding are an unavoidable phenomenon due to mold processing accuracy. Conventionally, this pulp has been removed by crushing and knocking it off with a high-speed jet of walnut powder, but since the charged walnut powder adheres to the package, it becomes necessary to remove it. This removal work requires time and effort. In addition, it is difficult to handle the powder because it requires careful attention to dust-proofing and explosion-proofing even on the entire surface of the room, where the powder must be sufficiently dry and stored in advance. In addition, the mask for protecting the package was easily worn out by high-speed spraying, so it could not be used for a long period of time.

本発明の目的はかかる粉体の高速噴射によるパッケージ
の不要なレジンパリ除去の欠点を解消し、新規なレザー
光照射方式によるパリ除去方法を提供することにある。
The object of the present invention is to eliminate the drawbacks of removing unnecessary resin debris from a package by high-speed jetting of powder, and to provide a method for removing debris using a novel laser light irradiation method.

以下に本発明を実施例を示す図面に基づいて説明する。The present invention will be explained below based on drawings showing embodiments.

第1A図はレジンバリの発生状況を説明する平面図であ
り、半導体、ICのレジンパッケージ1の外周パッケー
ジリード2に不要なレジンパリが発生する。尚当該パッ
ケージ1には素子やワイヤボンディング等の内部の装置
は省略しである。
FIG. 1A is a plan view illustrating the occurrence of resin burrs, in which unnecessary resin burrs occur on the outer package lead 2 of a resin package 1 for a semiconductor or IC. Note that internal devices such as elements and wire bonding are omitted from the package 1.

第1B図は第1A図x −x’線に沿う断面図であり、
レジンバリ30.31はパッケージ1の両面に生じる。
FIG. 1B is a sectional view taken along the line x-x' in FIG. 1A,
Resin burrs 30 and 31 occur on both sides of the package 1.

次に第2A図及び第2B図に基づいて本発明の詳細な説
明する。
Next, the present invention will be explained in detail based on FIGS. 2A and 2B.

半導体、ICパンケージ1にマスク4を遮閉した状態で
 レジン溶融温度くリードフレーム材溶融温度となる様
な出力、照射径1時間を調整したレザー光5な第2B図
に示す如くパッケージリード21τ照射することにより
パッケージの不要なパリ30 、31が溶融蒸発せしめ
られ除去される。
With the mask 4 closed on the semiconductor and IC pancase 1, the package lead 21τ is irradiated with the laser light 5 with the output and irradiation diameter adjusted for 1 hour so that the melting temperature of the resin is equal to the melting temperature of the lead frame material, as shown in Figure 2B. By doing so, unnecessary particles 30 and 31 of the package are melted and evaporated and removed.

尚第2A図においてはパッケージリード2を省略しであ
る。
Note that the package lead 2 is omitted in FIG. 2A.

リードフレーム材には4270イ材等の金属フレームが
主として使用されるが、上記に於いてこのリードフレー
ム材に変形、異常を与えぬ範囲内でレザー光を照射する
ことが必要である。上記により不要なレジンバリのみが
選択的に除去される。
A metal frame such as 4270I material is mainly used as the lead frame material, and in the above process, it is necessary to irradiate the laser light within a range that does not cause deformation or abnormality to the lead frame material. Through the above process, only unnecessary resin burrs are selectively removed.

マスク4には従来クルミ粉によるパリ取りの際に使用さ
れているものと同様の金属マスクを使用すればよい。
The mask 4 may be a metal mask similar to that conventionally used for deburring with walnut powder.

大きなレジンバリにあっても、レザー光による瞬時加熱
による材料の収縮率の差により簡単にハクリし易くなっ
ているためレザー光の照射後に軽度のエア吹きな行うこ
とにより除去できる。
Even if there is a large resin burr, it can be easily peeled off due to the difference in shrinkage rate of the material due to instantaneous heating by the laser light, so it can be removed by blowing a little air after irradiating the laser light.

パッケージリード2の熱による影響も当該リードよりも
低い溶融温度以下で行うので無視できるし且瞬時のレザ
ー照射を行えばよいのでそのパッケージ内部素子への影
響も無視できる。
The influence of the heat on the package lead 2 can be ignored since it is carried out at a melting temperature lower than that of the lead, and the influence on the internal elements of the package can also be ignored because instantaneous laser irradiation is sufficient.

レザー光は電気的に制御可能のためマスク4を省き、予
じめパッケージの外周のみを第3図中符号6で示す如く
走査する様にプログラムなくんでパリな除去してもよい
Since the laser light can be controlled electrically, the mask 4 may be omitted and the laser beam may be removed without programming by scanning only the outer periphery of the package as shown by reference numeral 6 in FIG. 3 in advance.

レザー光5はY A G (Yt t rium Al
umi numGarnet )レザー、CO,レザー
等レジンを透過しない波長の範囲のものであればいずれ
のものでもよい。
The laser light 5 is YAG (Yttrium Al
Any material may be used as long as it has a wavelength range that does not pass through the resin, such as umi num Garnet) laser, CO, and laser.

尚レジンバリはパッケージ10両面に生じるため、レザ
ー光を一方向照射の場合反転し再照射が必要であるが、
両面より同時照射してもよい。
Note that resin burrs occur on both sides of the package 10, so when laser light is irradiated in one direction, it is necessary to reverse the laser light and re-irradiate it.
Simultaneous irradiation may be performed from both sides.

本発明によれば半導体、ICパンケージの本体及びリー
ドフレームに何ら影響を与えずに不要なパッケージリー
ドフレーム周辺のパリを除去でき、レザー光により短時
間にパリのみを選択的に除去でき且確実であること、ク
ルミ粉な使用する場合の如く粉塵等の問題が殆んどない
ので取扱が容易であること、パッケージやリードフレー
ムにクルミ粉等が付着することがないのでこれらパッケ
ージやリードフレームが汚れることがないという優れた
作用効果を奏する。
According to the present invention, unnecessary pars around the package lead frame can be removed without affecting the semiconductor, the main body of the IC package, and the lead frame, and only the pars can be selectively removed in a short time using laser light, and in a reliable manner. It is easy to handle because there are almost no dust problems like when using walnut powder, and there is no chance of walnut powder adhering to the package or lead frame, so these packages or lead frames may get dirty. It has an excellent effect of not causing any problems.

【図面の簡単な説明】[Brief explanation of drawings]

第1A図は本発明においてレジンパリ発生状況な説明す
る平面図、 第1B図は第1A図x−x’線に沿う断面図、第2A図
はマスクによりパッケージな保護してなる状態を説明す
る平面図、 第2B図は第2A図Y−Y’線に沿う断面図、第3図は
レザー光のスキャンニング走査経路を説明する平面図で
ある。 1・・・パッケージ、2・・・パッケージリード、30
゜31・・・レジンバリ。 第1A図 第2A図 第28図 第  3 ノ 1
Figure 1A is a plan view illustrating the state of occurrence of resin flakes in the present invention, Figure 1B is a sectional view taken along the line xx' in Figure 1A, and Figure 2A is a plane view illustrating the state in which the package is protected by a mask. FIG. 2B is a sectional view taken along line Y-Y' in FIG. 2A, and FIG. 3 is a plan view illustrating the scanning path of laser light. 1...Package, 2...Package lead, 30
゜31...Resin burr. Figure 1A Figure 2A Figure 28 Figure 3 No. 1

Claims (1)

【特許請求の範囲】 半導体プラスチックパッケージのモールド時において生
じるリードフレーム周辺の不要なパリの 。 除去に際し、パリにレザー光を照射することにより除去
することを特徴とするバリ除去方法。
[Claims] Unnecessary cracks around the lead frame that occur during molding of semiconductor plastic packages. A burr removal method characterized by removing burrs by irradiating them with laser light.
JP22631482A 1982-12-24 1982-12-24 Method for removing burrs from semiconductor plastic packaging resin Pending JPS59117223A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22631482A JPS59117223A (en) 1982-12-24 1982-12-24 Method for removing burrs from semiconductor plastic packaging resin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22631482A JPS59117223A (en) 1982-12-24 1982-12-24 Method for removing burrs from semiconductor plastic packaging resin

Publications (1)

Publication Number Publication Date
JPS59117223A true JPS59117223A (en) 1984-07-06

Family

ID=16843254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22631482A Pending JPS59117223A (en) 1982-12-24 1982-12-24 Method for removing burrs from semiconductor plastic packaging resin

Country Status (1)

Country Link
JP (1) JPS59117223A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100413032B1 (en) * 2001-04-19 2003-12-31 주식회사 이오테크닉스 Apparatus for removing flash from integrated circuit package using laser
KR100478859B1 (en) * 2002-09-18 2005-03-24 주식회사 이오테크닉스 Cleaning method of adhesive residue material from a lead frame in semiconductor packaging process using laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100413032B1 (en) * 2001-04-19 2003-12-31 주식회사 이오테크닉스 Apparatus for removing flash from integrated circuit package using laser
KR100478859B1 (en) * 2002-09-18 2005-03-24 주식회사 이오테크닉스 Cleaning method of adhesive residue material from a lead frame in semiconductor packaging process using laser

Similar Documents

Publication Publication Date Title
US7170029B2 (en) Method and apparatus for deflashing of integrated circuit packages
JP4630717B2 (en) Breaking method of adhesive film
JP6483974B2 (en) Processing object cutting method
EP1148968B1 (en) Method and apparatus for removal of mold flash
KR102400826B1 (en) Cutting method and system for polymer resin mold compound-based substrate
KR20160092900A (en) Method of manufacturing device having substrate
JPS59117223A (en) Method for removing burrs from semiconductor plastic packaging resin
JPH0248423A (en) Chamfering method
CN109473395A (en) wafer processing method
JPH07124781A (en) Laser processing method and processing apparatus
JPS604225A (en) Method for removing resin burr in resin mold semiconductor device
JPH04213841A (en) Resin cutting method and device for resin-encapsulated semiconductor devices
JPH01258403A (en) Working of electronic component using laser
JPS6332957A (en) Manufacture of semiconductor device
JP2837068B2 (en) Lead frame manufacturing method
JPS60103628A (en) Manufacture of resin molded semiconductor device
JP2754269B2 (en) Unused resin removal device
JPH0555424A (en) Tie bar removing method for lead frame
JPH03239345A (en) Manufacture of semiconductor device
KR100248791B1 (en) Wafer Indexing Method
KR20180138532A (en) Method of manufacturing package device
JPH05335455A (en) Lead frame for semiconductor device
JPH0697341A (en) Semiconductor package manufacturing method, semiconductor package, electronic component manufacturing method, and electronic component
JPS63107520A (en) Flash removing equipment
JPS61241957A (en) Method for manufacturing a lead frame and method for manufacturing a semiconductor device using the lead frame