JPS5893222A - Preparation of semiconductor single crystal film - Google Patents
Preparation of semiconductor single crystal filmInfo
- Publication number
- JPS5893222A JPS5893222A JP19063081A JP19063081A JPS5893222A JP S5893222 A JPS5893222 A JP S5893222A JP 19063081 A JP19063081 A JP 19063081A JP 19063081 A JP19063081 A JP 19063081A JP S5893222 A JPS5893222 A JP S5893222A
- Authority
- JP
- Japan
- Prior art keywords
- film
- aperture
- single crystal
- silicon film
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims abstract 3
- 238000000034 method Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 20
- 229910052710 silicon Inorganic materials 0.000 abstract description 17
- 239000010703 silicon Substances 0.000 abstract description 17
- 238000010894 electron beam technology Methods 0.000 abstract description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 9
- 229910017052 cobalt Inorganic materials 0.000 abstract description 7
- 239000010941 cobalt Substances 0.000 abstract description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000008570 general process Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
発明の属する技術分野
本発明は多層半導体素子の製造方法に係わり、特に下地
結晶部から上部半導体ノーへのエピタキシャル結晶成長
技術に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a multilayer semiconductor device, and more particularly to a technique for epitaxial crystal growth from an underlying crystal portion to an upper semiconductor layer.
従来技術とその問題点
周知のように、半導体基板上に形成する半導体装置、特
に集積回路素子においては、酸化、拡散イオン注入、Ｃ
ｖＤ、写真蝕刻等の公知の技術を用いて、基板上に二次
元的に素子を配列させるものであった。そのため従来の
技術を用いて、半導体装置を高集積化、高速化する事に
は限界がある。Prior Art and its Problems As is well known, semiconductor devices, especially integrated circuit elements, formed on a semiconductor substrate require oxidation, diffusion ion implantation, C
Devices were two-dimensionally arranged on a substrate using known techniques such as vD and photolithography. Therefore, there are limits to increasing the integration and speed of semiconductor devices using conventional techniques.
この限界を打破する方法として素子を多１−に積み重ね
る、所謂三次元果ｍ ｌａｌ路が提案されてお・りそれ
を実現させるだめの基板材料として絶縁膜上の多結晶シ
リコンまたは非晶質シリコンＩ―を、Ｖ −ブー光や電
子ビーム等のエネルギービーム照射により、粗大結晶粒
化または単結晶化し、それを積層するものが有望視され
ている。As a way to overcome this limit, a so-called three-dimensional multi-layer stacking of devices has been proposed, and polycrystalline silicon or amorphous silicon on an insulating film is used as the substrate material to realize this. A method in which I- is made into coarse crystal grains or single crystal by irradiation with an energy beam such as V-boo light or an electron beam, and then laminated is considered to be promising.
多層半導体素子に用いる基板材料の製造方゛法は現在名
に幾つか提案されているが、その中で最も有望視されて
いるものにＩＪ）８Ｓ法（Ｌａｔｅｒａ Ｗｐｉ ｔａ
ｘｙｂｙ ５ｅｅｄｅｄ ５ｏｌｉｄ百１ｃａｔ ｉｏ
ｎ ） カアル、。There are currently several proposed methods for manufacturing substrate materials used in multilayer semiconductor devices, but the most promising method is the IJ)8S method (Latera Wpita).
xyby 5eeded 5olid101catio
n) Kaal.
ＬＰ０１法は第１図に示す様に、シリコン基板（１）ヒ
の絶縁膜（２）の一部を開孔し、その上に多結晶または
非晶質シリコン膜を堆積し、連続ビームのレーザー光ま
たは゛−子線を照射して、上記開口部で−Ｆ地地軸結晶
シリコン基板の接触部を種結晶として、そこから横方向
に結晶成長させる。この、場合開孔ｆｆ１ｉから最大約
１００μｍ程度、単結晶領域（３）が伸びて行く。この
方法の特長は前記、種結晶部分の位１１の定め方により
単結晶領域を基板面内の希望する場所に作り得る事にあ
り、半導体素子を必らず単結晶領域のＦに形成で角る事
である。As shown in Figure 1, in the LP01 method, a hole is formed in a part of the silicon substrate (1) and an insulating film (2), a polycrystalline or amorphous silicon film is deposited on the hole, and a continuous beam laser is applied. By irradiating with light or an electron beam, crystals are grown in the lateral direction from the contact portion of the -F geocrystalline silicon substrate at the opening as a seed crystal. In this case, the single crystal region (3) extends by about 100 μm at most from the opening ff1i. The advantage of this method is that a single crystal region can be formed at a desired location within the substrate plane by determining the seed crystal portion at position 11, as described above, and the semiconductor element can be formed at the F of the single crystal region, making it possible to form a single crystal region at a corner. It is a matter of
ＬＥＳＳ法による結晶膜成長を行なう場合、絶縁膜上の
シリコン族と、開口部のシリコン基板上のシリコン族で
はそれらの下地材質の熱伝導度や、エネルギービームの
反射、干渉、等の違いにより加熱状態が異なるため、シ
リコン膜全体に対して結晶成長に最適な状態を作り出す
事が難がしい。When growing a crystal film using the LESS method, the silicon group on the insulating film and the silicon group on the silicon substrate in the opening are heated due to differences in the thermal conductivity of their underlying materials, energy beam reflection, interference, etc. Since the conditions are different, it is difficult to create the optimum conditions for crystal growth for the entire silicon film.
レーザービーム照射の場合には下地絶縁膜表面での光の
反射、電子ビーム照射の場合には、下地物質からシリコ
ン膜に戻ってくる後方散乱電子の影響によるものである
。一般に、絶縁膜は、シリコンよりも熱伝導度が低いた
め、絶縁膜上のシリコン族の方がシリコン基板上のシリ
コン膜よりも、温度が上りやすい。このため、開口部の
７リコ／膜に最適な条件で、エネルギービーム全照射ｌ
−だ場合には、絶縁膜上のシリコン膜に対しては照射条
件が強すき゛る事になる。In the case of laser beam irradiation, this is due to the reflection of light on the surface of the underlying insulating film, and in the case of electron beam irradiation, this is due to the influence of backscattered electrons returning from the underlying material to the silicon film. Generally, an insulating film has lower thermal conductivity than silicon, so the temperature of the silicon group on the insulating film increases more easily than that of the silicon film on the silicon substrate. For this reason, the entire energy beam irradiation l
-, the irradiation conditions will be too strong for the silicon film on the insulating film.
発明の目的
本発明は、この様な点に鑑みてなされたもので容易しこ
エピタキシャル結晶成長させる事を目的とする。OBJECTS OF THE INVENTION The present invention has been made in view of the above points, and an object of the present invention is to facilitate epitaxial crystal growth.
発明の概要
この発明は、開口部のシリコン基板とその上に堆積する
シリコン膜との間に薄い金属膜或は金属珪化物膜を挿入
して、エピタキシャル結晶成長させるようにしたもので
ある。SUMMARY OF THE INVENTION In the present invention, a thin metal film or metal silicide film is inserted between the silicon substrate in the opening and the silicon film deposited thereon, thereby allowing epitaxial crystal growth.
発明の効果
本発明によれば、面内温度分布をなだらかとする事がで
き、横方向エピタキシャル結晶成長を容易化した半導体
単結晶膜の製造方法を提供することができる。Effects of the Invention According to the present invention, it is possible to provide a method for manufacturing a semiconductor single crystal film in which the in-plane temperature distribution can be made gentle and lateral epitaxial crystal growth can be facilitated.
発明の実施例
以Ｆ、本発明の実施例全図面を用いながら説明−４６ｏ
第２゜本！””ＩＭ Ｅよ、横方向結晶よ長ヶオす＠面
図である。まず、シリコン基板（１）の上に通常の工程
によりシリコン酸化ｇ（２）を形成した後、種結晶部と
すべき場所のシリコン酸化膜（２）を写真−剣法により
除去して、開口部を形成する。次に厚さ２００大のコバ
ルト膜（５）を真空蒸層法Ｖ′こより堆積し、写真蝕刻
法により、開口部以外のコバルト膜を除去する。その上
に、多結晶シリコン膜（３）を減圧ＣＶＤ法により堆積
させた。シリコン酸化膜（２）と多結晶シリコン膜（，
３）の厚みはそれぞれ、０．５μｍと０．３μｍである
。次に電子ビームアニールにより表面近傍を加熱して横
方向結晶成長させた。電子ビームの加速電圧はｌ０ＫＶ
、ビーム電流２ｍＡ、ビーム径約１００μｍである。電
子線は表面上を走査速度％Ｃｍ ／ Ｓの速さでラスタ
ースキャンさせた。Embodiments of the invention to F, Examples of the invention will be explained using all the drawings-46o
2nd book! ``''IM E, this is a long side view of a lateral crystal. First, a silicon oxide film (2) is formed on a silicon substrate (1) by a normal process, and then the silicon oxide film (2) at the location where the seed crystal is to be formed is removed using a photographic method to form an opening. form. Next, a cobalt film (5) having a thickness of 200 mm is deposited by vacuum evaporation method V', and the cobalt film other than the openings is removed by photolithography. A polycrystalline silicon film (3) was deposited thereon by low pressure CVD. Silicon oxide film (2) and polycrystalline silicon film (,
The thicknesses of 3) are 0.5 μm and 0.3 μm, respectively. Next, the vicinity of the surface was heated by electron beam annealing to cause lateral crystal growth. The accelerating voltage of the electron beam is 10KV
, beam current 2 mA, and beam diameter approximately 100 μm. The electron beam was raster scanned over the surface at a scanning speed of % Cm/S.
この結果、開口部より長さ５００μｍ、幅３０１１ｍの
シリコン膜が下地基板と同一の面方位の単結晶膜となっ
た。これは、開口部の多結晶シリコン膜では入射゛電子
ビームによる直接加熱に加えて、下のコバルト層からの
後方散乱電子が加熱に寄与したためシリコン酸化膜上の
多結晶シリコン膜とほぼ同等の温ｐｌｖｃなったため、
面内横方向の温度勾配がゆるやかになったためと考えら
れる。一方、コバルト層の部分は電子ビームアニールに
よりコバルトミリサイドノーが形成された事が、オージ
ェ１子分光法による深さ方向元素分布測定により明らか
吉なった。このため、下地シリコン基板と上部単結晶シ
リコン膜とは、オーム性接触が容易に得られた。As a result, a silicon film having a length of 500 μm and a width of 3011 m from the opening became a single crystal film having the same plane orientation as the underlying substrate. This is because, in addition to direct heating by the incident electron beam, backscattered electrons from the underlying cobalt layer contributed to the heating of the polycrystalline silicon film at the opening, which resulted in a temperature almost equivalent to that of the polycrystalline silicon film on the silicon oxide film. Because it became PLVC,
This is thought to be due to the temperature gradient in the in-plane lateral direction becoming gentler. On the other hand, it was clearly confirmed by measuring the elemental distribution in the depth direction using Auger single-molecule spectroscopy that cobalt milicide was formed in the cobalt layer by electron beam annealing. Therefore, ohmic contact between the underlying silicon substrate and the upper single crystal silicon film was easily obtained.
本実施例では電子ビームアニール法による単結晶化を示
したが、レーザーアニールでも同等の効果が得られるっ
その場合は界面での光の反射、シリコン膜内での光の多
重反射、干渉等の現象が加熱に寄与する訳である。In this example, single crystallization by electron beam annealing was shown, but the same effect can be obtained by laser annealing. This phenomenon contributes to heating.
また、本実施例では多結晶シリコン膜の形成に減圧ＣＶ
Ｄ法を用いたが、超高真空中での蒸着、スパッタリング
、イオンビームデポジシ冒ン等を用いても同等の効果が
得られる。多結晶シリコン膜の下に敷く金属層にコバル
トを用いたが、その他にパラジウム、白金、モリブデン
、タングステン、ニオブ、ニッケル等を用いても良い。In addition, in this example, low pressure CV was used to form the polycrystalline silicon film.
Although method D was used, the same effect can be obtained by using vapor deposition in an ultra-high vacuum, sputtering, ion beam deposition, or the like. Although cobalt was used for the metal layer placed under the polycrystalline silicon film, other materials such as palladium, platinum, molybdenum, tungsten, niobium, nickel, etc. may also be used.
第１図はＬＥＳＳ法を説明する為の断面図、＃Ｔ２図は
本発明の詳細な説明する為の断面図である。
（ほか１名）
第１図
第２図FIG. 1 is a sectional view for explaining the LESS method, and FIG. #T2 is a sectional view for explaining the present invention in detail. (1 other person) Figure 1 Figure 2
Claims (1)
部を除去して開口させ、その上・に金属或は金属珪化物
膜を被着し、その上に多結晶或は非晶質の半導体膜を被
着した後、（子ビーム或はレーザー光照射する事により
、上記開口部から横方向にエピタキシャル成長させる事
を特徴とする半導体単結晶膜の製造方法。An insulating film is crushed on the surface of a single crystal semiconductor substrate, a part of the insulating film is removed to create an opening, a metal or metal silicide film is deposited on top of the insulating film, and a polycrystalline or amorphous film is formed on top of that. A method for manufacturing a semiconductor single crystal film, which comprises depositing a semiconductor film of high quality, and then epitaxially growing it laterally from the opening by irradiating it with a laser beam or a laser beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19063081A JPS5893222A (en) | 1981-11-30 | 1981-11-30 | Preparation of semiconductor single crystal film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19063081A JPS5893222A (en) | 1981-11-30 | 1981-11-30 | Preparation of semiconductor single crystal film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5893222A true JPS5893222A (en) | 1983-06-02 |
| JPH0332208B2 JPH0332208B2 (en) | 1991-05-10 |
Family
ID=16261259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19063081A Granted JPS5893222A (en) | 1981-11-30 | 1981-11-30 | Preparation of semiconductor single crystal film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5893222A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60246620A (en) * | 1984-05-22 | 1985-12-06 | Agency Of Ind Science & Technol | Manufacture of semiconductor crystal layer |
| JPS6163018A (en) * | 1984-09-04 | 1986-04-01 | Agency Of Ind Science & Technol | Manufacture of semiconductor thin film crystal layer |
| JPS6163017A (en) * | 1984-09-04 | 1986-04-01 | Agency Of Ind Science & Technol | Method for manufacturing semiconductor thin film crystal layer |
| JPS61201414A (en) * | 1985-03-02 | 1986-09-06 | Agency Of Ind Science & Technol | Manufacture of semiconductor single crystal layer |
| JPS61234088A (en) * | 1985-04-10 | 1986-10-18 | Agency Of Ind Science & Technol | Laser light irradiating device |
| JPH02138725A (en) * | 1988-06-28 | 1990-05-28 | Ricoh Co Ltd | Semiconductor substrate and manufacture thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51130169A (en) * | 1975-05-07 | 1976-11-12 | Nec Corp | Semiconductor device |
-
1981
- 1981-11-30 JP JP19063081A patent/JPS5893222A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51130169A (en) * | 1975-05-07 | 1976-11-12 | Nec Corp | Semiconductor device |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60246620A (en) * | 1984-05-22 | 1985-12-06 | Agency Of Ind Science & Technol | Manufacture of semiconductor crystal layer |
| JPS6163018A (en) * | 1984-09-04 | 1986-04-01 | Agency Of Ind Science & Technol | Manufacture of semiconductor thin film crystal layer |
| JPS6163017A (en) * | 1984-09-04 | 1986-04-01 | Agency Of Ind Science & Technol | Method for manufacturing semiconductor thin film crystal layer |
| JPH0236052B2 (en) * | 1984-09-04 | 1990-08-15 | Kogyo Gijutsuin | |
| JPS61201414A (en) * | 1985-03-02 | 1986-09-06 | Agency Of Ind Science & Technol | Manufacture of semiconductor single crystal layer |
| JPH0334847B2 (en) * | 1985-03-02 | 1991-05-24 | Kogyo Gijutsuin | |
| JPS61234088A (en) * | 1985-04-10 | 1986-10-18 | Agency Of Ind Science & Technol | Laser light irradiating device |
| JPH0250838B2 (en) * | 1985-04-10 | 1990-11-05 | Kogyo Gijutsuin | |
| JPH02138725A (en) * | 1988-06-28 | 1990-05-28 | Ricoh Co Ltd | Semiconductor substrate and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0332208B2 (en) | 1991-05-10 |
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