JPS5868290A - Control method of magnetic bubble memory device - Google Patents

Abstract

PURPOSE:To speed up a read of a defective loop by controlling the revolution of a driving magnetic field so that the starting position of defective loop information stored in a bootstrap loop stops at an odd-numbered or even-numbered bit from a readout replicator according to whether the number of bits is odd or even. CONSTITUTION:The bubble memory device 16 equipped with minor loops 7-1- 7-n, a readout major line 8, a write major line 9, and a bootstrap loop 6 stored with defective loop information is driven by control drivers 18 and 18', and a function driver 19 controlled by a controller 17 to perform writing and reading operation. Read data are amplified by a sense amplifier 20. A driving control circuit 21 controls a driving magnetic field. So that the starting point of the defective loop information stops at an odd-numbered or even-numbered bit from a replicator according to whether the number of bits is odd or even, the driving magnetic field is controlled, speeding up a readout of the defective loop information.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a control method for a major-minor configuration magnetic bubble memory device having a boot loop.

Recently, magnetic bubble devices that use magnetic bubbles to store information, perform logical operations, etc. are non-volatile, have high memory density,
It has low power consumption and is extremely reliable because it is a solid-state device that does not include any mechanical elements. The element configuration of such a magnetic bubble mesori includes a serial loop system in which the bubble propagation path 1 is an endless loop as shown in FIG. 1, and a major-minor loop system having a major fin 2 and a minor loop 3 as shown in FIG. There is a method. As a large-capacity memory, a major-minor loop with quick access is advantageous. However, due to the manufacturing process of the crystal substrate of the magnetic bubble memory, defects in the crystal lattice and defects occurring in the propagation path cannot be avoided. Therefore, in the major-minor loose method, a certain number of bad loops are allowed from the beginning, and bad loops such as and are not used.

Information about this defective loop is stored in a specific page of each minor loop, and after reading this information, necessary information is read or written. However, in the reading method of the major-minor loop method, as shown in FIG. reading,
After reading this page, the bubbles of the next page are transferred to the major 2-in and read out in sequence in this manner. If reading is performed in this manner, it may take a long time to read depending on where on the minor loop the page storing the defective loop information is located. As a countermeasure against this problem, a boot loop 6 is provided as a special loop for storing defective loop information as shown in FIG. 3, and this loop is configured so that writing and reading can be performed serially. However, writing and reading are normally performed every two bits. Therefore, if the number of bits in the boot loop is odd, no matter where the beginning position of the defective loop information is, it can be read by going through at least two boot loops. In addition, if the number of boot loose bits is an even number, the beginning position of the defective loop information can be read out.
When the transfer gate for transfer is stopped due to odd number bits being bitten, reading becomes impossible. Even if the number of bits in the ninth boot loop is an even number, reading is possible, and in order to shorten the reading time, we have developed a reading method that allows reading if the beginning of the defective loop information is 1M from the boot loop. development is required. The present invention was devised based on this requirement.

Therefore, in the magnetic bubble memory device control method of the present invention, in a magnetic bubble memory device having a major-minor loop configuration and including a boot loop for storing defective loop information, the start position of the defective loop information stored in the boot loop is determined. , when the number of bootloose bits is odd, the read replicator is stopped at the odd numbered bit, and when the number of bootloose bits is even, the readout replicator is stopped at the even numbered bit. It is characterized by controlling rotation.

The system of the present invention will be explained in detail below based on the accompanying drawings.

FIG. 3 shows a magnetic bubble memory device equipped with a boot loop, where 6 is a boot loop, 7-1 to 71 are i-inner loops, 8 is a major line for reading, and 9 is a magnetic bubble memory device equipped with a boot loop.
is the major line for writing, 1° is the bubble generator,
11 is a detector, 12 is a replicator for reading the bootloop, 13th is a replicator for reading the minor loose, 14 is a swap gate for writing to the bootloose, and 15 is! It is a swap gate for writing to Inaroo 1.

A circuit for implementing the method of the present invention in a nine-bubble memory device constructed as shown in FIG. 4 is shown in FIG. To explain the figure, the bubble memory device 16 is driven by the coil drivers 18, 18' and the funxy print driver 19 controlled by the controller 17, and performs writing and continuous output. The sense amplifier 20 is used to amplify read data. Here, four drive-side circuits 2 according to the present invention
1 is connected to or incorporated into the control sheet 17,
It functions to control the driving magnetic field.

Next, control of a boot loop with an odd number of bits will be explained using FIG. 5. The beginning of the bad loop information is the 5th
As shown in figure (a), in boot loop 6, the position is an even number of bits ahead of the read replicator (section A).
Assuming that the bit is stopped at this start position, counting in the bubble propagation direction shown by the arrow, up to the replicator will be an even number of bits, so when reading every 2 bits, the bit will pass through the replicator in the first round, and the second bit will pass through the replicator in the first round. It will be read out every week. This reading is 211! In order to eliminate this serious problem, the present invention controls the driving magnetic field so that the leading position of the defective information always stops at a position that is an odd number of bits ahead of the replicator A, as shown in FIG. 5(b). By doing this, the beginning of the cine good loop information will be an even number of bits up to the replicator A, counting in the bubble propagation direction shown by the arrow, so that it will always be read within 1 rM.

Next, control of a boot loop with an even number of bits will be explained using FIG. 6. In this case, as shown in Fig. 6 (g), if the beginning of the defective loop information stops at a position ■ that is an odd number of bits ahead of replicator A, then the distance from that position to the replicator in the bubble propagation direction indicated by the arrow is an odd number. It becomes a bit and cannot be read out no matter how many times it goes around.

Therefore, in the present invention, the beginning of the defective loop information is always stopped at the even numbered bit for the replicator. By doing this, the head of the defective information is an even number of bits counted in the bubble propagation direction indicated by the arrow, so that it is always read within one bit. In addition, Fig. 6 (b) 0
Using two boot loops, each loop 6-, 6-2
If the loop failure loop information is stored with a one-bit shift, it will always be possible to read it within one revolution, but in this case, the line drive magnetic field O control becomes complicated), which is not preferable.

As explained above, the control method of the magnetic bubble memory device of the present invention makes it possible to quickly perform O reading when a boot loop is used.

[Brief explanation of drawings]

Figure 1 is a configuration diagram of an example of serial loop type magnetic bubble memory 01, Figure 2 is a configuration diagram of an example of a major/minor type magnetic bubble memory, and Figure 3 is a configuration diagram of an example of magnetic bubble memory 01 with a boot loop. An example configuration diagram, FIG. 4 is a block diagram of a circuit used in the control method of the magnetic puzzle memory device of the present invention, FIG. 5 is an explanatory diagram illustrating control when the boot loop is an odd number of bits, and FIG. FIG. 3 is an explanatory diagram illustrating control when the number of boot loops is even. 6... Boot loop, 7-1 to 7-n... Minor loose, 8... Major line for reading, 9...
Major line for writing, 10... Bubble generator,
11--Detector, 12.13--Resilicator, 14
゜15... Swap gate, 16... Bubble memory device, 17... Control 4-2, 1'8, 18'
...=Ildofipa, 19...Funkshi Seal>
driver, 20... sense amplifier, 21... drive control circuit. Figure 3 Figure 4

Claims (1)

[Scope of Claims] t In a magnetic bubble memory device having a major-minor loop configuration and equipped with a pull loop for storing bad loop information, the start position of the bad loop information stored in the boot loop is determined when the number of bits of the boot loop is an odd number. is from the read replicator! A control method for a magnetic bubble memory device, characterized in that the rotation of a bubble drive magnetic field is controlled so as to stop at an odd numbered bit L, and when the number of bits of the boot loop is even, to stop at an even numbered bit F from a read replicator. .