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JPS5866333A - Washing tank - Google Patents

Washing tank

Info

Publication number
JPS5866333A
JPS5866333A JP16480381A JP16480381A JPS5866333A JP S5866333 A JPS5866333 A JP S5866333A JP 16480381 A JP16480381 A JP 16480381A JP 16480381 A JP16480381 A JP 16480381A JP S5866333 A JPS5866333 A JP S5866333A
Authority
JP
Japan
Prior art keywords
holes
water
phi
cleaning
cleaning liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16480381A
Other languages
Japanese (ja)
Other versions
JPS6242374B2 (en
Inventor
Itaru Yamanaka
山仲 格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP16480381A priority Critical patent/JPS5866333A/en
Publication of JPS5866333A publication Critical patent/JPS5866333A/en
Publication of JPS6242374B2 publication Critical patent/JPS6242374B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To efficiently wash by a method wherein opening areas are changed in accordance with the surface length in the flowing direction of a washing solution for a washed substance and holes are provided on a plate controlling the flow of washing solution. CONSTITUTION:For example, 3mm.phi holes 61 and 4mm.phi holes 62 are provided on the area xXy of a baseplate 41 conforming to the region existing a discoid Si substrate 1. The distance of the surface in parallel with the flowing direction of wash water is long at the center Z1 and short at the periphery Z2. The maximum holes 62 are provided just under Z1. Holes 63 are 2.5mm.phi holes for introducing solution. This constitution increases flowing amount at the central section of the substrate 1 and permits efficient and rational washing. When a water current is sufficiently strong, the appreciable volume of water is obtained by providing a small hole meeting a feedwater port 5 at the center 64 of the baseplate 41. The same effect is obtained by providing holes having the same opening area with high density at the vicinity of the region 65 just under the Z1.

Description

【発明の詳細な説明】 本発明は物体の洗浄、特に半導体ウェハの水洗に用いる
洗浄槽の構造に藺わる。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure of a cleaning tank used for cleaning objects, particularly for cleaning semiconductor wafers.

半導体ウェハの水洗、洗浄は、半導体装置の製造工程に
おいて重要な工程の一つである。水洗になどの特殊な処
理を施した純度の高い水であシ、コストの点からも少な
い水量で効率よく洗浄を行うことが望まれる。本発明は
、この目的に沿う構造を具備した洗浄槽を提供するもの
である。
Washing and cleaning of semiconductor wafers is one of the important steps in the manufacturing process of semiconductor devices. It is desirable to use highly purified water that has been specially treated for washing, and to perform washing efficiently with a small amount of water from a cost standpoint. The present invention provides a cleaning tank having a structure that meets this purpose.

従来の洗浄槽の例を第1図(−)、 (b)に示す断面
図を用いて説明する。円板状半導体ウェハ1は治具2に
多数並べてセットされ、洗浄槽3の中に入れられる。給
水口6から入った水は、底板4に多数穿たれた導入孔6
を経て洗浄槽3に供給される。
An example of a conventional cleaning tank will be explained using cross-sectional views shown in FIGS. 1(-) and 1(b). A large number of disk-shaped semiconductor wafers 1 are set side by side on a jig 2 and placed in a cleaning tank 3. The water that enters from the water supply port 6 flows through many introduction holes 6 drilled in the bottom plate 4.
The water is supplied to the cleaning tank 3 through.

第1図(C)に平面図を示すように、導入孔6は、同一
大きさの孔が等間隔で底板4に穿たれている。
As shown in the plan view of FIG. 1(C), the introduction holes 6 are holes of the same size that are bored in the bottom plate 4 at equal intervals.

このような底板を有する洗浄槽の欠点は、洗浄すべき半
導体ウェハの有無に関係なくすべての領域に水の導入が
なされることである。このため、半導体ウェハの存在す
る領域、第1図におけるXX7と同じように、不要な領
域へも水を送り、洗浄効率が必ずしも高くない欠点があ
る。
A disadvantage of a cleaning tank with such a bottom plate is that water is introduced into all areas, regardless of whether there are semiconductor wafers to be cleaned or not. For this reason, water is also sent to unnecessary areas, such as the area where the semiconductor wafer is present, XX7 in FIG. 1, which has the disadvantage that the cleaning efficiency is not necessarily high.

本発明は上記の欠点を除去し、必要な領域へよシ多くの
水を供給できるよう、底板の構造を改良したものである
The present invention eliminates the above-mentioned drawbacks and improves the structure of the bottom plate so that more water can be supplied to the required areas.

本発明にかかる実施例を第2図に示す。洗浄すべき円板
状の半導体ウェハの存在する領域に対応する底板41の
範囲xxy内に、開口面積の大きい孔62(たとえば3
閣φ)、更に大きい孔61(たとえば4mφ)を設は右
。第1図(−)で示したように、洗浄すべき半導体ウェ
ハ表面上の洗浄水の流れ方向に平行8な表面の距離は、
半導体ウェハの中心部で大きり211周辺部では小さく
z2である。したがって、これに対応して第2図では最
も大きい孔81は、Zl の直下に設ける。々お、63
は2.6mφの洗浄液導入孔である。こうすることによ
り、ウェハの中心部で流れる水の量が多くなり効率のよ
い合理的な洗浄が可能となる。また、底板41の中央部
64には、小さい孔を設けた。これは給水口5の位置に
対応していて、水流が十分強い場合には、小さい孔でも
かなシの水量が得られるためである。
An embodiment according to the present invention is shown in FIG. A hole 62 with a large opening area (for example, 3
), and a larger hole 61 (for example, 4 mφ) is installed on the right. As shown in FIG. 1 (-), the distance between the surfaces of the semiconductor wafer to be cleaned that are parallel to the flow direction of the cleaning water is:
It is large 211 at the center of the semiconductor wafer and small z2 at the periphery. Correspondingly, therefore, the largest hole 81 in FIG. 2 is provided directly below Zl. 63
is a cleaning liquid introduction hole of 2.6 mφ. By doing so, the amount of water flowing in the center of the wafer increases, allowing efficient and rational cleaning. Further, a small hole was provided in the center portion 64 of the bottom plate 41. This corresponds to the position of the water supply port 5, and is because if the water flow is strong enough, a small amount of water can be obtained even with a small hole.

第3図の実施例で示す底板は半導体ウェハの領域に対応
する範囲xxyの内にあって、前記のzlの直下に相当
する場所の付近(xlxy)65に、高い密度で同一開
口面積の導入孔を設けた底板42である。個々の孔の開
口面積は同一でも、密度の大小によシ、有効開口面積に
関しては第2図の例と同じ効果を発揮できる。
The bottom plate shown in the embodiment of FIG. 3 is located within the range xxy corresponding to the area of the semiconductor wafer, and the same opening area is introduced at high density in the vicinity (xlxy) 65 of the location directly below the above-mentioned zl. This is a bottom plate 42 provided with holes. Even if the opening area of each hole is the same, the same effect as the example shown in FIG. 2 can be achieved with respect to the effective opening area, regardless of the density.

以上説明したように、本発明の洗浄槽であれば、同一の
水量であっても洗浄すべき半導体ウェハの表面の長さの
大小に応じて必要な領域に、より多くの量の洗浄水が送
られ、効率よく洗浄が行われる利点がある。なお、上記
の実施例では、被洗浄物として半導体ウェハを例示した
が、この例に限られるものでないこと勿論である。
As explained above, with the cleaning tank of the present invention, even if the amount of water is the same, a larger amount of cleaning water can be applied to the required area depending on the length of the surface of the semiconductor wafer to be cleaned. This has the advantage that cleaning can be carried out efficiently. In the above embodiment, a semiconductor wafer was used as an example of the object to be cleaned, but it is needless to say that the object is not limited to this example.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(−)、 (b)は洗浄槽を説明するための断面
図、第1図(C)は従来例の底板の平面図、第2図、第
3図は本発明の実施例の底板の平面図である。 1・・・・・・洗浄すべき半導体ウェハ、3・・・・・
・洗浄槽、41,42・・・・・・底板、61,62.
63・・・・・・洗浄液導入孔。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名−−
4 第2t!1 第3図 F
Figures 1 (-) and (b) are cross-sectional views for explaining the cleaning tank, Figure 1 (C) is a plan view of the bottom plate of the conventional example, and Figures 2 and 3 are of the embodiment of the present invention. FIG. 3 is a plan view of the bottom plate. 1... Semiconductor wafer to be cleaned, 3...
・Cleaning tank, 41, 42... Bottom plate, 61, 62.
63...Cleaning liquid introduction hole. Name of agent: Patent attorney Toshio Nakao and one other person
4 2nd t! 1 Figure 3 F

Claims (1)

【特許請求の範囲】[Claims] (1)洗浄液の流入部に、同洗浄液の流入を制御する制
御板を配設するとともに、同制御板に、被洗浄物表面の
洗浄液の流れ方向に沿う表面長さの大小に対応して開口
面積の大小が変化する洗浄液導入孔を穿−設した仁とを
特徴とする洗浄槽。 @)開口面積の大小が洗浄液導入孔の孔径の大小で付与
されていることを特徴とする特許請求の範囲第1項に記
載の洗浄槽。 0)開口面積の大小が洗浄液導入孔の穿設密度の大、J
・で付与されていることを特徴とする特許請求の範囲第
1項に記載の洗浄槽。
(1) A control plate for controlling the inflow of the cleaning liquid is provided at the inlet of the cleaning liquid, and the control plate has openings corresponding to the length of the surface of the object to be cleaned along the flow direction of the cleaning liquid. A cleaning tank characterized by a hole in which a cleaning liquid introduction hole whose area varies in size is provided. @) The cleaning tank according to claim 1, wherein the opening area is determined by the diameter of the cleaning liquid introduction hole. 0) The size of the opening area increases the drilling density of cleaning liquid introduction holes, J
. The cleaning tank according to claim 1, characterized in that:
JP16480381A 1981-10-14 1981-10-14 Washing tank Granted JPS5866333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16480381A JPS5866333A (en) 1981-10-14 1981-10-14 Washing tank

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16480381A JPS5866333A (en) 1981-10-14 1981-10-14 Washing tank

Publications (2)

Publication Number Publication Date
JPS5866333A true JPS5866333A (en) 1983-04-20
JPS6242374B2 JPS6242374B2 (en) 1987-09-08

Family

ID=15800215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16480381A Granted JPS5866333A (en) 1981-10-14 1981-10-14 Washing tank

Country Status (1)

Country Link
JP (1) JPS5866333A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5503171A (en) * 1992-12-26 1996-04-02 Tokyo Electron Limited Substrates-washing apparatus
US5590672A (en) * 1992-09-25 1997-01-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor cleaning apparatus and wafer cassette
US6059891A (en) * 1997-07-23 2000-05-09 Tokyo Electron Limited Apparatus and method for washing substrate
US6115867A (en) * 1997-08-18 2000-09-12 Tokyo Electron Limited Apparatus for cleaning both sides of substrate
US6431184B1 (en) 1997-08-05 2002-08-13 Tokyo Electron Limited Apparatus and method for washing substrate
US6539963B1 (en) * 1999-07-14 2003-04-01 Micron Technology, Inc. Pressurized liquid diffuser

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5590672A (en) * 1992-09-25 1997-01-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor cleaning apparatus and wafer cassette
US5503171A (en) * 1992-12-26 1996-04-02 Tokyo Electron Limited Substrates-washing apparatus
US6059891A (en) * 1997-07-23 2000-05-09 Tokyo Electron Limited Apparatus and method for washing substrate
US6431184B1 (en) 1997-08-05 2002-08-13 Tokyo Electron Limited Apparatus and method for washing substrate
US6115867A (en) * 1997-08-18 2000-09-12 Tokyo Electron Limited Apparatus for cleaning both sides of substrate
US6276378B1 (en) 1997-08-18 2001-08-21 Tokyo Electron Limited Apparatus for cleaning both sides of substrate
US6539963B1 (en) * 1999-07-14 2003-04-01 Micron Technology, Inc. Pressurized liquid diffuser
US6647996B2 (en) 1999-07-14 2003-11-18 Micron Technology, Inc. Method of diffusing pressurized liquid
US6672319B2 (en) 1999-07-14 2004-01-06 Micron Technology, Inc. Pressurized liquid diffuser
US6860279B2 (en) 1999-07-14 2005-03-01 Micron Technology, Inc. Pressurized liquid diffuser

Also Published As

Publication number Publication date
JPS6242374B2 (en) 1987-09-08

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