JPS58500187A - High current package with multi-level leads - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] Background to the invention of high-current packages that support multi-level leads The present invention relates to an improved semiconductor device, and more specifically, to an improved semiconductor device. Regarding packages used in high-current semiconductor devices using multiple semiconductor chips. It is.

Although high current semiconductor devices are widely used, they are expensive. These are the high points , primarily because of the use of expensive materials and complex assemblies. for example, Prior art semiconductor power devices typically have large amounts of copper substrates, large numbers of internal parts, and high They use expensive ceramic insulators and expensive assembly methods.

Prior art semiconductor devices with large current capacities are not only expensive but also difficult to install. , especially if you crowd them together in several plays and isolate them from the mounting surface. Difficult to attach. Prior art devices, because of their shape and terminal arrangement, do not allow heat sinking. It is inconvenient to assemble to the busbar for connection to blocks or playbacks.

For example, flexible leads are often required to independently support each bus bar. Become. Furthermore, many of the prior art devices are atortes Btlletin UL508 Table 18. I Au gust 19.1977 proposed practice for industrially used elements. The device does not meet the established minimum terminal spacing. These suggestions 3/8 between all terminals of high voltage (hot) leads and heat sink potential. An inch (0.76 cm) air gap must be maintained.

Designing a new power semiconductor device that is easy to install and use, especially in play form Attempts have been made to do so. However, even with these improved devices, the prior art cannot overcome all of its drawbacks and is still expensive. In this way, the industrial environment environmentally compatible, mechanically easy to install and use, and includes busbars for interconnection. There is still a need for inexpensive, rugged semiconductor power equipment that can accommodate flexible self-supporting arrangements of continues to be requested.

It is therefore an object of the present invention to provide an improved semi-finished product that is inexpensive for a given class of operations. An object of the present invention is to provide a conductor power device.

Another object of the present invention is to improve the minimum air gap compliance of the proposed hot leads. The object of the present invention is to provide a semiconductor power device with improved performance.

A further object of the invention is to provide greater flexibility with respect to mounting and mechanical usability. ：Having change An object of the present invention is to provide an improved semiconductor power device.

Another object of the invention is to provide an improved semiconductor power device that is rugged and particularly suitable for industrial environments. Our goal is to provide the following.

Another object of the invention is to assemble a small number of parts held together by a dielectric adhesive material. The object of the present invention is to provide an improved semiconductor device.

Still another object of the invention is to provide an improved semiconductor device particularly suitable for use with multiple semiconductor chips. An object of the present invention is to provide a body power device.

Another object of the invention is to provide an improved method for semiconductor devices with improved characteristics. There is a particular thing.

Still another object of the invention is to provide a bus in a plane remote from the control or signal leads. The object of the present invention is to provide a high current power terminal that directly supports a bar.

Summary of the invention The present invention, which achieves the above objects and other objects and advantages, has a heat transfer surface on the opposite side. One or more semiconductor chips are placed on the flat part of the first electrode or terminal member formed. The flat part is equipped with at least one, usually a second, flat part. third electric A pole or terminal member is mounted as an insulating means. Each of the above terminal members is mutually They are spaced apart from each other and are arranged approximately parallel to the periphery of the chip mounting area. Easy electrical connection to each terminal member or electrode is possible. Assemble the above parts. The assembly is preferably made of plastic, with only the heat transfer surface and the terminals of the various electrodes exposed. packaged by Furthermore, the above power or high current terminals are on the diagonal. The coupling nut is placed in the pocket and is also molded into the package. is folded over the packaging assembly to movably retain the packaging assembly.

These high current terminals are located at a predetermined minimum distance from the heat transfer surface and the signal or control IJ-board. They are spaced apart. The coupling nut has a mating recess when tightening the electrical connection screw. As a result, the final tightening torque is absorbed by the terminal.

the above#! 1 electrode to the above-mentioned 2nd electrode. Dielectric adhesive to insulate the third electrode Fees are used. Electrical isolation of the device from the mounting surface shall be provided by a separate or integrated insulation layer. is achieved.

Brief description of the drawing A more complete understanding of the invention may be obtained from the following detailed description with reference to the following drawings. As may be obtained by considering, here, FIG. 1 shows a prior art thread cutting system stud and pigtail lead type device. Ash; FIG. 2 shows an improved prior art device; FIG. 3 shows an improved prior art device according to the present invention. A diagram illustrating internal members of a semiconductor device; FIGS. 4A to 4C show the packaged semiconductor device of the present invention from different directions. In the figure, each terminal is configured to hold a coupling nut, as shown in Figure 4A. Figure 4B shows the features on the top surface, Figure 4C shows the features on the side surface, and Figure 4C shows the features on the side surface. oh#): Figures 5A and 5B show various orientations when connecting the semiconductor device of the present invention to a conventional bus. This is an example of

Detailed description of preferred embodiments Figure 1 shows a heavy hexagonal copper base 11, a threaded mounting stud, and a ceramic Insulator 13f: A prior art pigtail lead semiconductor power device with Illustrate. High current or high power connections to this device must be made using threaded system studs. This is accomplished by a terminal connection 17 through a braided pigtail lead 14.

Control signals are supplied from terminals 18 and 19 via flexible leads 15 and 16. . Because of the flexibility of the power leads 14, the busbars used to connect this type of device are The disadvantage is that it must be supported separately. This kind of prior art device is sturdy However, it is expensive and has the disadvantage of being difficult to insulate from the heat sink. .

FIG. 2 shows a structure formed by laminating a copper substrate 21, a ceramic insulator n, and a semiconductor chip 23. An example of an improved semiconductor device 2ot is shown. Fixed in plastic envelope and a tapped ferrule connected to the semiconductor die via the leads and 27'1. Power is supplied through the bus and the prisoner and the flexible braided lead. bonding A31 and the terminal connected to the semiconductor chip by (to) are controlled through control signal is supplied. The assembly of the plastic-filled package surrounding. The holes are rounded to attach the device to the heat sink.

This device addition allows the connection bus bar to connect to the device terminals 28 without the need for an external support. It overcomes the disadvantages of the prior art device shown in the first figure in that it is directly supported and fixed. However, many drawbacks remain. For example, complex assemblies with many parts Yellowtail is necessary. There is a lack of rotational symmetry between the power terminals and the fourth rotation. This outfit Because there is a bus bar that crosses the top of the device, it is difficult to access the control signal terminal and (9). difficult to do. Furthermore, the devices shown in FIGS. 1 and 2 consist of a single large semiconductor Because it is designed for die use, there is a risk of die cracking during or after assembly. There is also.

The internal structure of the device of the present invention overcomes the drawbacks of the prior art devices of FIGS. 1 and 2. , 793 as a preferred embodiment. Assemblies inside the device must be flat. Flat portions 42a, 42b t-first terminal member or electrode line A terminal portion I having a bend s43 and a coupling hole 6 and forming a high current or high power terminal. It is composed of The flat parts 42a+42b are used for connecting or closing semiconductor chips and terminals. 10th surface 42a to which the member 47 and & are attached, and a surface for heat radiation from the completed device. It has an opposite second surface 42b that functions as a heat conduction surface.

A flat portion 48 is provided on the flat portion 42 & of the first member 41 via an insulating means 60. A second terminal member 47 is attached thereto. The second terminal member or electrode 47 is It has a vertical bent portion 49, and the terminal portion (material) is connected to the other side having a coupling hole 51. It forms a high power or high current terminal. Signal or control lead with hole 9 The terminal is preferably made of the same material as the second terminal member 47; Suitably, they are of different thickness but form part of the second terminal member. has a flat portion 54 The third terminal member 53 is connected to the flat part of the first terminal member 41 via the insulating means 61. It is installed on 42&. This third terminal part foundation is completely equipped with holes 57 and between the vertical bending parts. It has a terminal portion 56 with a diameter. The sub-section with the hole 57't- is connected to the other signal or form control lead terminals.

The second terminal member 47 and the third terminal base are spaced apart, and the first terminal member 47 is spaced apart from each other. A bonding region 46 of the flat portion 42a of the member 41 is formed. this bondi In the contacting area, a semiconductor chip or a plurality of semiconductor chips are connected to the first terminal member 41. It is installed. The bonding area or flat portion 42a of the first terminal member 41 in other places or on the flat part 48 or 8 of the terminal member 47 or &, It is also possible to additionally bond auxiliary semiconductor chips. semiconductor chip drama is electrically connected to the flat part of the second terminal member 47 by the bonding ring 67. At the same time, the flat part of the terminal base of H3 is connected by bonding ll68. physically connected. auxiliary as necessary to achieve the desired circuit function. Connect the chip 66 to the second and/or third terminal member 47 and/or other chips. can be connected to. Examples of desired auxiliary chips and interconnects mentioned above suppress transients A wire or wires connected between the emitter and collector of a power transistor to power diodes (buffers), power transistors and Speedup connected between emitter base of power Darlington chip Improved current distribution between diodes and/or some transistor chips There are two or more parallels connected in series to the emitter and base of a power transistor to There are several means of resistance. Other auxiliary tips and connections can also be used.

Semiconductor chip and assembly 40 in the case of an active semiconductor device requiring three-terminal connection is shown as an example, but similar structures with different numbers of terminals can be used with 2, 3, 4, or Can be used with semiconductor chips and other devices that require more terminal connections This will be easily understood by those skilled in the art. The terminal member 41 was generated within the semiconductor chip. It also functions as a heat sink for heat, and transfers this heat to the external heat shield via the heat transfer surface 42b. link. Therefore, each semiconductor chip example to 66 is bonded to the terminal member 41. The means for attaching, attaching, or bonding should provide good thermal contact. Yes. Good thermal contact must be maintained between any semiconductor chip and terminal member. As a matter of fact, electrically insulating inserts can be used if necessary.

Although Asemp IJ 40 was illustrated for the case where multiple semiconductor chips are used, It is clear that the entire space of the plateau can be used by any number of chips. example For example, it is possible to achieve the same current capacity using a single large chip or multiple small chips. It can be achieved. This assembly IJ 40 is particularly suitable for use with multiple chips.

As the active chip area increases, the manufacturing yield of semiconductor chips decreases rapidly. The above-described assembly is preferred since it is well known in the art. Single large chip Instead of a single chip, multiple small chips are operated in parallel, each with approximately the same current flowing through them. Economicalization can be achieved. Current 1 hogging 2 due to any one chip To prevent, each chip's safe operating area, switching time, forward voltage drop, etc. It is desirable to match the electrical parameters t-i. This is before assembly. Individual chips are screened and tested by methods well known in the art. It can be achieved. However, selecting each chip from the same wafer Good, the desired consistency can be easily obtained without further M separation. There was found. Therefore, using the same parts, such as the terminal members 41 and 47 and the jumper, The number of parallel-connected semiconductor dies or chips to be bonded in this assembly. By simply changing , it is possible to realize final devices with various current standards. child This is extremely convenient for manufacturing.

Even if you select dies from the same wafer, the remaining dies cannot be individually packaged. Since it can be used at any time, there is no waste. Various passive elements, diodes, and transistors Active elements such as stars, thyristors, optically pumped devices, field effect devices, integrated circuits, etc. , or a combination of these, or assemble resistors, capacitors, inductors, etc. It is clear to those skilled in the art that it can be used in various devices to realize various device functions. Ru. By arranging the terminal members 47 and the wires in a spaced apart manner in parallel, the terminal member 47 has a substantially rectangular shape. A bonding area 46 of The area 46 is arranged so that the bonding lines for the base member 47 and the group do not overlap each other. It becomes possible to install chips 64 and 651 inside. This will allow assembly becomes simple and costs are reduced. Use other methods to connect each device can.

Figures 4A to 40 illustrate preferred embodiments of the packaged semiconductor device of the present invention. This is a plastic body 81 with mounting holes 82 and a reinforcing ridge. I have 85 wo. The heat transfer surface 42b is θ~20 mils (O~ 0.05 cm), preferably protruding by 2 mils (0.005 cm). There is. The lower part of the hole center for attachment is an external heat sink to which this device is attached. The heat transfer surface 42b may be present on the top and prevent the heat transfer surface 42b from coming into substantially uniform contact with the heat sink. It is designed to accept the insertion rod that extends through it.

Terminals can be traced from various parts of this packaging equipment.

The blade, 56 and shell are protruding. The power terminal part (capital) and the shrine are bent inward, It has coupling holes 51 and 45 and forms a substantially coplanar terminal section 84 that faces each other internally. ing. The internally opposing terminal sections and tears are partially distributed in the plastic body 81. It has a connecting nut 88t, and this part of the main body 81 is fitted with the nut wing. A connecting screw (not shown) is inserted through holes 6 and 51 and has a matching or complementary shape. This prevents the nut 88 from rotating when the nut 88 is inserted. Retained oak) 88 is , preferably an integrated unit installed upward toward the lower surface of the internal opposing terminal portion & 84 A fixed washer portion 89 is provided. Nut wing, complementary part (capital) and internal opposing terminal part &, the dimensions of 84 are for the terminal section, the underside of 84 and the complementary part of the plastic package. The distance 97 (Figure 4C) from the beauty is approximately equal to the height of the oak) 88 and the washer 89. It will be adjusted to make it more accurate. As a result, the oak) 88 is directed toward the lower surface of the terminal portion B, 84. When it is pulled up, the oak) 8B will separate from the complementary head. like this Since it has a similar structure, the oak) 88 is first held by the complementary part, and the holes 51 and 451 are connected to each other. Rotation is hindered by the connection screw (not shown) inserted In this case, connection to the device of the present invention becomes extremely easy. This holding function is the nut feather This continues until the looseness between the terminal section 84 and the terminal section 84 is almost completely eliminated. Natsuto feather is the terminal section, and is pulled up toward the bottom of 84, and the integrated fixed washer area is the terminal section. , 88 rises from the outside of the complementary part almost at the same time when it is pressed against the lower surface of 84. break away. Therefore, with the final tightening of the connection screw to the main power terminal section 84, This large torque is transmitted to the main power terminal, and the It is not transmitted directly to the main body 81 as in the case where it is integrally molded. stomach. The terminal parts 6 and 6 on the outside of the plastic body 81 are flexible and are free from stress. Because it acts as a buffer, torque transmission through the terminal hole and 6 is limited to the plastic body. There is less risk of damaging the 81.

The packaging device (equipment) preferably has a substantially rectangular shape and the terminal portions & 84 are diagonal. , in this case arranged diagonally and facing each other. Equipment manufactured according to the invention As an example, the packaging equipment (capital) is 2.25 inches (5.7 Bm) square. , the connecting holes and 41 are symmetrically spaced 1.76 inches (4,5cm) from each other along the diagonal. m) spaced apart, so that any opposite side of the approximately rectangular shape of the device 81 One pair of parallel nape bars should be shouldered with a center spacing of 1.25 inches (3.2 am). I can do it. As another example, the knot cager (equipment) is 2.1 inches (5,3 cm) x 2.25 inches (5.7 am), connecting holes 45 and 51 are diagonal These spacings are arranged in a line and define the corresponding busbar spacing (dimension 14 in Figure 5). 2 and 143) are 1.25 inches (3.2 cm) and 1.29 inches (3.3 cm) ).

Between the control signal terminals protruding from the negative side of the packaging equipment The distance is preferably 95 from the current Underwri. ter Laborato-ries' minimum standard of 4 inches (1,27am ) That's it. The distance 94 between terminal I and group is Underwriter Labor It is s4 inches (0.95 cm) or more, which is the standard for Ato-ries.

Similarly, the power terminal section 84 is located at a distance of about 0.8 inch (2 cm) from the base surface n. They are separated by 91 points. Vertical distance between control signal terminals 58 and power terminal section 84 The separation 93 is connected to the control signal terminal I and 58t. Allows the pass line to run in any direction. This is big for users It's an advantage, it's convenient.

A notch is formed in 810% of the plastic body, and a terminal can be attached as necessary. Ma and Dan can stand upright. Between the control terminals and the jump, it is preferable to Dimensions are such that they accept connectors and plugs, but other connection methods may also be used. good.

The device (equipment) has an electrically insulating washer interposed between the heat transfer surface 42b and the external heat sink. By being attached to an external heat sink such that Conveniently insulated. Suitable materials for this washer include the well-known mica and Kapton et al. The mounting holes formed in the insulating package body 81 are also Since it is inherently insulated, no insulating mounting means are required.

Alternatively, the device may be permanently bonded to the heat transfer surface 42b. It may also include an insulating layer 99't-. The material suitable for this insulation layer is low temperature. Examples include glass, insulating plastic, and adhesive ceramic. against heat sink A metallic heat spreading layer 100 is added to the insulating layer 99 to ensure good thermal contact. In particular, a metal-insulator-metal sandwich consisting of multiple regions 42b-99-100 It is desirable to form a tsuchi structure 101. This metal heat diffusion layer 100 is Edge layer 99f: protects from abrasion and punctures and facilitates installation by the user . This sandwich structure 101 has terminal members 47 and 5 on the surface 42a of the terminal member 41. 3. When installed, it can also be made of similar materials. As a heat diffusion material Copper, aluminum, steel and thermally conductive alloy materials can be used.

In a preferred embodiment for a device with a current capacity of 200-250 A, terminal members 41 and 4 7 is made of 106 inches (o, tscm) copper and has terminal members & control or The signal terminals are made of 0.603 inch (0.08 am) steel. For convenience, trust The terminal 58 is made of 0.06 inch (0.15 cm) copper as part of the terminal member 47. It can also be formed and thinned to 0.03 inches (0.08 am). Preferably , nickel plating is applied to the copper, but this is not required. aluminum or steel Other conductive materials such as metals or combinations of metals may be used.

The insulating means ω and 61 are dielectric of a predetermined thickness, typically 10 mils (0,025 am). Constructed from adhesive material. Plastic-impregnated glass is preferred, but glass or Adhesive dielectric materials or different thicknesses (e.g. 3 to 60 mils; O, OS to 0. 15am) may be used.

The device (material) is manufactured in the following manner: by punching or etching copper, etc. Terminal members 41, 47 and fields having shapes as shown in FIG. 3 are formed. these The parts are preferably nickel plated. Examples of semiconductor chips and additional products and 6 are bonded to the flat portion 42a of the first terminal member 41 by a conventional method. Ru. This terminal member 41 is installed within the odor control for alignment. Terminal member 47 Preforms ω and 61 of dielectric adhesive material are formed in the group, and this is used as an alignment member. and the terminal member 41 in the terminal jig. As the dielectric adhesive material mentioned above, Poxy impregnated glass can be used, but ceramic, low temperature glass and other materials alone Satisfactory results can be obtained with or in combination with organic adhesives. conventional wire bond various locations on the semiconductor chip are electrically connected to the terminal members. customary da A coating is applied and the completed assembly is inserted into the mold cavity. in the package To prevent plastic material from entering below the surface 42b of the terminal member 4, The surface 42b is strongly pressed against the surface of the mold cavity. The transmission of the terminal member 41 in the final product The heating surface 42b is a small amount, typically 2 mm, from the bottom surface 92 of the plastic body 81. It is adapted to the shape of the heat transfer surface 42b so that it protrudes by the length (0,005 am). A slight push is made within the mold cavity.

This assembly is performed using well-known techniques, preferably using glass-filled epoxy, polyimide, etc. Packaged in reinforced plastic material. Other materials such as low temperature glass and ceramics Materials can also be used. After packaging is completed, an electric wire is used to hold the nut wings for binding. A power terminal is formed. What is the above-mentioned method for mounting the chip, assembling and forming the terminal member? It will be readily apparent to those skilled in the art that different orders may be used. For example, the edge The child members 41, 47 and 53 are shaped as shown in Fig. 3 before or after assembly. You can also.

When changing the characteristics or functions of a device, the device (capital) can be changed without redesigning the chip itself. The number, dimensions, shape, and characteristics of semiconductor chips and other elements to be installed inside the device can be changed. In this respect, it is natural that the method and structure disclosed above are extremely flexible. It will be obvious to the business operator. This provides great flexibility and manufacturing convenience. .

Figures 5A and 5B are diagrams of the present invention for convenience of bus connections and arrangement of control signal terminals. Various guidelines are exemplified regarding the arrangement of semiconductor power devices in the United States. Figure 5A shows the large A semiconductor device that grows current power terminals 121 and 122 and control terminals 123 and 124 120 to a similar device 126 via buspar 131, which in turn connects buspar 130 to a similar device 126. FIG. 3 is a plan view showing the connection to a similar device 132 via the device. Terminal 121 122 are separated by a lateral spacing 142, 143.

The device 120 is installed toward the right side of the control signal terminals 123 and 124i.

Device 126 has an upwardly oriented control signal terminal. Figures 5B to 5D In this case, the orientation of device 120 is fixed, while similar devices 127-129 can be It has been rotated by 90 degrees to illustrate possible orientations.

Buspars 130-141 provide a variety of possibilities for connecting devices with different orientations. exemplifies the method. Power terminals 121 and 122 are arranged symmetrically on the diagonal of the device and the dimensions of 142 and 143 are equal, then the device is rotated by 90'. Terminals 121 and 122 are connected one after another to the corners of the rectangle in the arrangement shown in Figure D. i Just by rotating 1800 rpm, it can be adapted to the standard busbar arrangement and generates high current. Both power boards are brought into contact with both of the two busbars. Dimensions 142 and If 143 are not equal, swap the power terminals for the fixed bus arrangement. This requires a 180° rotation.

Another important feature of the design of the device is the control terminal 12, as shown in FIG. 5B. Since devices 3 and 124 are arranged asymmetrically, devices 120 and 127 are placed opposite each other. the control terminals of device 120 are alternated with those of device 127 when It is in. This allows each device to be arranged in a dense array, reducing space requirements. can.

As is clear from the foregoing, a low cost improved power supply according to the present invention Methods and structures have been provided for semiconductor devices that minimize hot leads. Underwriters Laboratories' proposed specifications regarding the spacing of They are suitable for all types of equipment, and they also have major advantages in terms of mechanical convenience for installation and use. These are durable and suitable for industrial environments; can be assembled from a small number of parts using a dielectric adhesive material, Since the terminal members are arranged almost parallel to each other, the bonding wires overlap. The advantage of this technology is that it can simplify the placement and bonding of multiple semiconductor devices without causing problems. It is suitable for the use of multiple semiconductor chips, and these also have power terminals and signal Provides isolation by power level of terminals and further improves the equipment's ability to use the symmetry and placement of various terminals. It provides many conveniences in shaping the play, and these are all Isolation can be achieved by using integrated insulation layers and heat spreading layers or by insulating washers. 0 or more that is conveniently isolated from external heat sinks without the use of external attachment means As is clear from the description of the present invention, various modifications can be made within the scope of the invention by those skilled in the art. It is possible for people to Accordingly, it is not intended to include all such variations. It is.

1% Submission of translation of written amendment (Article 184, Paragraph 7, Paragraph 1 of the Patent Law) October 251, 1982 Mr. Kazuo Wakasugi, Commissioner of the Patent Office Display of patent applications International application number PCT/US821001532 Title of invention Patent applicant for high current package with multi-level read tV Address: Shambab, Illinois 60196, USA.

East Algonfin Road, 1303 Name: Motorola Parakeet -Holated Representative Rauner, Vincent Joseph Nationality: United States of America Country Principal agent Address: 2-5-2 Minami-Nagasaki, Toshima-ku, Tokyo Claims 1. (Correction) Each includes a flat part, a terminal part extending outward from the flat part, and the terminal and a step portion connecting the flat portion. second and third electrodes; The flat part of the second electrode has a smaller area than the flat part of the first electrode, and the flat part of the second electrode has a smaller area than the flat part of the first electrode. It is located above the plateau; The flat part of the third electrode has a smaller area than the flat part of the second electrode, and the flat part of the third electrode has a smaller area than the flat part of the second electrode. located above the electrode; Said 2nd. The sum of the areas of the flat portions of the third electrode is #! The area of the flat part of the electrode of below, and these deductions define the remainder; and at least the original contacting the remaining portion of the flat portion of the first electrode; to the third electrode At least one semiconductor chip to be connected; Equipped with Said 1st. In the semiconductor device, the terminal portions of the second electrodes are arranged diagonally opposite each other.

2 (Amendment) The above 1. The end of the terminal portion of the second electrode is located above the semiconductor device. forming a U-shaped member extending to the jg1. The first degree in the terminal part of $2 The external connection to the second electrode is the external connection to the third electrode. 2. The semiconductor device according to claim 1, which is separated from and does not interfere with each other.

In a semiconductor device with a λ (correction) package and a minimum of two current terminals : At least one of the at least two current terminals is parallel to a portion of the package and having a flat end spaced a predetermined distance therefrom; the flat end defines an opening through which the attachment means is passed; and A portion of said package defines a recess for temporarily retaining complementary fastening means. semiconductor devices.

4. (Correction) The package is approximately rectangular, and the minimum two current terminals are The half according to claim 3, wherein the child is arranged diagonally of the package. conductor device.

& (Correction) The other of the minimum two current terminals is parallel to a part of the package. and has a flat end portion spaced a predetermined distance therefrom, and the at least two current terminals 4. The semiconductor device according to claim 3, wherein the flat end portions of the semiconductor device are substantially coplanar.

& At least one of the minimum two current terminals from the package is different from at least one of the two current terminals. A claim for the entire history of the control terminal that is pulled out in the direction and is not flush with the flat end. 4. The semiconductor device according to item 4.

7. First terminal member; a second terminal member disposed on the first terminal member by a first insulating means; a second terminal portion disposed on the first terminal member by a second insulating means; a third terminal member spaced apart from the material; The spaced apart second. a bond on the first terminal member adjacent to the third terminal member; bonding area: at least one semiconductor chip mounted on the bonding area; The minimum one semiconductor chip is placed in the first. electrically connected to the second and third terminal members; the first terminal member includes a first power terminal, and the first terminal member includes a first power terminal; The second terminal member includes a second power terminal, and the third terminal member includes a first signal terminal. Semiconductor power equipment with children.

& (Correction) The bonding area is the area where the at least one semiconductor chip is attached. and long enough to mount two or more semiconductor chips. f: It has a substantially rectangular shape with shoulders, and the spaced apart second .f. installed between the third terminal member. a plurality of semiconductor chips mounted on the semiconductor chip, the first connection region of each of the semiconductor chips being in the front; a second connection region of each semiconductor chip that is connectable to the third terminal member; The semiconductor electrode according to claim 7, wherein the semiconductor terminal is connectable to the second terminal member. power device.

9. (Amendment) The above 1. The second insulating means each have a first and a second predetermined thickness. 8. A semiconductor power device as claimed in claim 7 comprising a stick of impregnated glass.

10. (Correction) The first one having an external connection part. forming second and third terminal members; The bonding area on the first main surface of the two main surfaces of the first terminal member is Combine a minimum of one semiconductor chip: the first insulating hand on a first side of the bonding area on the first terminal member; assembling the second terminal member in stages; the second insulating hand on the second side of the bonding area on the first terminal member; Assembling the third terminal member in stages: The first part of the semiconductor chip. The second.. without intersecting the second regions. No. connected to each of the terminal members of 3; The second main surface of the two main surfaces of the first terminal member and the second main surface of each of the terminal members. The at least one semiconductor chip and each of the terminal members are connected to each other with the external connection portion exposed. package; and Form each external connection in place to movably hold the external connection A method for manufacturing a power semiconductor device.

11. (Amendment) The above 1. The second assembly process involves assembling each of the first and second insulation means. 1st. Claim 10 made using a second plastic-impregnated glass A method of manufacturing the power semiconductor device described above.

12. (Correction) The bonding process is performed using at least two semiconductor chips. A method for manufacturing a power semiconductor device according to claim 11.

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Claims (1)

[Claims] 1. Each includes a flat part, a terminal part extending outward from the flat part, and the terminal part and A first section including a step section connecting the flat section. Second and third electrodes: the second electrodes The flat part of the pole has a smaller area than the flat part of the first electrode, and the flat part of the first electrode has a smaller area than the flat part of the first electrode. Those located above: The flat part of the third electrode has a smaller area than the flat part of the second electrode, and the flat part of the third electrode has a smaller area than the flat part of the second electrode. The one located above the electrode: Said 2nd. The sum of the areas of the flat parts of the third electrode is less than or equal to the area of the flat parts of the first electrode. and these deductions shall constitute the balance; and at least contacting the remaining portion of the flat portion of the first electrode; Connected to third electrode Minimum of one semiconductor chip connected; Equipped with Said 1st. The terminal portions of the second electrodes are arranged diametrically opposite each other in the semiconductor device. 2 The above 1. The end of the terminal portion of the second electrode extends inward above the semiconductor device. forming a U-shaped member in which the first . For external connections to the second terminal section, Claim No. 3, which is separated from the external connection to the third terminal and does not interfere with each other. The semiconductor device according to item 1. In a semiconductor device with a λ package and a minimum of two current terminals t-W: At least one of said current terminals is parallel to and predetermined from a portion of said package. have flat ends spaced apart; the flat end defines an opening through which the attachment means is passed; and A portion of said package defines a recess for temporarily retaining complementary fastening means. semiconductor devices. Table: A flat end parallel to and spaced a predetermined distance from the part of the package. further comprising at least two current terminals, and the flat ends are substantially coplanar. A semiconductor device according to claim 3. & emerging from the package in a direction different from the at least one of the current terminals; Claim 4, further comprising a control terminal that is not on the same plane as the flat end. Semiconductor device on board. & Each of the current terminals is disposed close to the longest end of the package. 3. The semiconductor device according to item 3. 7. First terminal member: a second terminal member disposed on the first terminal member by a first insulating means; a second terminal portion disposed on the first terminal member by a second insulating means; Terminal member of group 3 separated from the material: The spaced apart second. Bonding on the first terminal member between third terminal members region; a minimum of one semiconductor chip thermally coupled to the bonding region; The minimum one semiconductor chip is placed in the first. electrically connected to the second and third terminal parts. the first terminal member includes a first power terminal, and the first terminal member includes a first power terminal; The second terminal member includes a second power terminal, and the third terminal member includes a first signal terminal. Semiconductor power equipment with children. & The bonding area is large enough to contain at least one semiconductor chip. The width of the tV is sufficient and the length is sufficient to mount a semiconductor chip of 2fa or more. It has a substantially rectangular shape, and is further mounted between the spaced apart second and third terminal members. a plurality of semiconductor chips, the first connection region of each semiconductor chip being connected to the third connection region; The second connection region of each semiconductor chip is connectable to the terminal member, and the second connection region of each semiconductor chip is connected to the terminal member. 18. The semiconductor power device according to claim 17, which is connectable to the second terminal member. . East 1st above. The second insulating means consists of a plastic-impregnated glass of a predetermined thickness. The semiconductor power device according to claim 7. 10. External connection St shoulder 1st. forming second and third terminal members; The bonding area on the first main surface of the two main surfaces of the first terminal member is Combine a minimum of one semiconductor chip: A first insulating hand having a predetermined thickness is installed on the first side stop of the bonding area. assembling the second terminal member to the first terminal member by steps; said second insulating means having a second predetermined thickness is placed on a second side of the recording area; Assemble the third terminal member to the first terminal member of the semiconductor chip; second The second. without intersecting the regions. connected to each of the third terminal members; The second main surface of the two main surfaces of the first terminal member and the second main surface of each of the terminal members. the at least one semiconductor chip and the terminal member so that the external connection portion is exposed; package; and A method of manufacturing a power semiconductor device in which the external connection portion is formed at a predetermined position. 11. Said No. 1. The second insulating means are each I11. Second glass impregnated glass made of a material, and the first and second predetermined thicknesses are the same as the first and second predetermined thicknesses. Contains plastic @2 The power half according to claim 1O, which is substantially determined by the thickness of the immersed glass material. Method of manufacturing a conductor device. The bonding process is performed by bonding at least two semiconductor chips of the same type selected from the same wafer. The method for manufacturing a power semiconductor device according to claim 10, which is carried out using a .