JPS58184855U - phototransistor - Google Patents
phototransistorInfo
- Publication number
- JPS58184855U JPS58184855U JP8204282U JP8204282U JPS58184855U JP S58184855 U JPS58184855 U JP S58184855U JP 8204282 U JP8204282 U JP 8204282U JP 8204282 U JP8204282 U JP 8204282U JP S58184855 U JPS58184855 U JP S58184855U
- Authority
- JP
- Japan
- Prior art keywords
- phototransistor
- conductor
- junction
- collector
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図及び第２図は従来のホトトランジスタを示す断面
図、第３図は本考案による一実施例を示す断面図、第４
図は第２図の要部拡大断面図、第５図ａ、 ｂは従来
及び本考案による装置の等節回。 略図である。
１：コレクタ、２：ベース、３：エミッタ、４：コレク
タ・ベース接合、５：ベース・エミッタ接合、６：ＳＯ
３膜、１１．１２：導電体。1 and 2 are cross-sectional views showing a conventional phototransistor, FIG. 3 is a cross-sectional view showing an embodiment of the present invention, and FIG. 4 is a cross-sectional view showing a conventional phototransistor.
The figure is an enlarged cross-sectional view of the main part of Figure 2, and Figures 5a and 5b are isometric rotations of the conventional device and the device according to the present invention. This is a schematic diagram. 1: Collector, 2: Base, 3: Emitter, 4: Collector-base junction, 5: Base-emitter junction, 6: SO
3 films, 11.12: conductor.
Claims (1)
１−９構造を有するホトトランジスタにおいて、コレク
タ・ベース接合を被う絶縁膜上に導電体を形成し、該導
電体を工゛ミッタと同電位に接続してなることを特徴と
するホトトランジスタ。A junction was formed terminating at one major surface of the semiconductor substrate. −
A phototransistor having a 1-9 structure, characterized in that a conductor is formed on an insulating film covering a collector-base junction, and the conductor is connected to the same potential as an emitter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8204282U JPS58184855U (en) | 1982-06-01 | 1982-06-01 | phototransistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8204282U JPS58184855U (en) | 1982-06-01 | 1982-06-01 | phototransistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58184855U true JPS58184855U (en) | 1983-12-08 |
Family
ID=30091122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8204282U Pending JPS58184855U (en) | 1982-06-01 | 1982-06-01 | phototransistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58184855U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51110289A (en) * | 1975-02-28 | 1976-09-29 | Philips Nv | |
| JPS55162282A (en) * | 1979-05-31 | 1980-12-17 | Siemens Ag | Transistor for light controllable type |
-
1982
- 1982-06-01 JP JP8204282U patent/JPS58184855U/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51110289A (en) * | 1975-02-28 | 1976-09-29 | Philips Nv | |
| JPS55162282A (en) * | 1979-05-31 | 1980-12-17 | Siemens Ag | Transistor for light controllable type |
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