JPS60125748U - Lateral transistor - Google Patents
Lateral transistorInfo
- Publication number
- JPS60125748U JPS60125748U JP1340884U JP1340884U JPS60125748U JP S60125748 U JPS60125748 U JP S60125748U JP 1340884 U JP1340884 U JP 1340884U JP 1340884 U JP1340884 U JP 1340884U JP S60125748 U JPS60125748 U JP S60125748U
- Authority
- JP
- Japan
- Prior art keywords
- region
- insulating film
- gate electrode
- lateral transistor
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来のラテラル型トランジスタを説明する断面
図、第２図および第３図は本考案のラテラル型トランジ
スタを説明する断面図および上面図である。
主な図番の説明、１１は半導体基板、１２はエピタキシ
ャル層、１４は半導体領域、１６はコレクタ領域、１７
はエミッタ領域、２２は第１の絶縁膜、２３は第２の絶
縁膜、２４はゲート電極である。FIG. 1 is a sectional view illustrating a conventional lateral type transistor, and FIGS. 2 and 3 are sectional views and top views illustrating the lateral type transistor of the present invention. Explanation of main figure numbers: 11 is a semiconductor substrate, 12 is an epitaxial layer, 14 is a semiconductor region, 16 is a collector region, 17
is an emitter region, 22 is a first insulating film, 23 is a second insulating film, and 24 is a gate electrode.
Claims (1)
表面に接近して設けられた逆導電型のコレクタ領域およ
びエミッタ領域と前記半導体領域を被覆する第１の絶縁
膜と該第１の絶縁膜上に設けられた電極とを具備し、前
記第１の絶縁膜上を被覆する第２の絶縁膜を設は該第２
の絶縁膜上に少くとも前記コレクタ領域とエミッタ領域
間のベース領域を被覆する様にゲート電極を設は該ゲー
ト電極を前記ベース領域より高電位にバイアスすること
を特徴とするラテラル型トランジスタ。a semiconductor region serving as a base region of one conductivity type; a collector region and an emitter region of an opposite conductivity type provided close to the surface of the semiconductor region; a first insulating film covering the semiconductor region; and the first insulating film. and a second insulating film covering the first insulating film.
A lateral type transistor, wherein a gate electrode is provided on the insulating film so as to cover at least a base region between the collector region and the emitter region, and the gate electrode is biased to a higher potential than the base region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1340884U JPS60125748U (en) | 1984-02-01 | 1984-02-01 | Lateral transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1340884U JPS60125748U (en) | 1984-02-01 | 1984-02-01 | Lateral transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60125748U true JPS60125748U (en) | 1985-08-24 |
Family
ID=30497387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1340884U Pending JPS60125748U (en) | 1984-02-01 | 1984-02-01 | Lateral transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60125748U (en) |
-
1984
- 1984-02-01 JP JP1340884U patent/JPS60125748U/en active Pending
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