JPS58130275A - Sintered body for vacuum deposition - Google Patents
Sintered body for vacuum depositionInfo
- Publication number
- JPS58130275A JPS58130275A JP57011245A JP1124582A JPS58130275A JP S58130275 A JPS58130275 A JP S58130275A JP 57011245 A JP57011245 A JP 57011245A JP 1124582 A JP1124582 A JP 1124582A JP S58130275 A JPS58130275 A JP S58130275A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sintered body
- electron beam
- beam heating
- vacuum deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001771 vacuum deposition Methods 0.000 title claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 238000010894 electron beam technology Methods 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract 6
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract 3
- 239000000377 silicon dioxide Substances 0.000 claims abstract 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 230000001681 protective effect Effects 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000010408 film Substances 0.000 description 13
- 239000000843 powder Substances 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 101100481408 Danio rerio tie2 gene Proteins 0.000 description 2
- 101100481410 Mus musculus Tek gene Proteins 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000003869 coulometry Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001856 erectile effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は電子ビーム加熱によって真空蒸着する際に蒸発
源として使用される炉規な焼結体、轡に反射防止膜、保
ＩＩｉ績として使用される蒸着ＩＡを得るための蒸発県
物質に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention is intended to obtain a furnace-sized sintered body used as an evaporation source in vacuum evaporation by electron beam heating, an anti-reflection film on a casing, and a evaporated IA used as an insulation material. Regarding the evaporation of prefectural substances.
最近、真空蒸着の際、蒸発源物質を加熱するのに電子ビ
ーム加熱が採用されている。これは、促来の抵抗加熱で
は、高融点の物質例えばＴ１０゜が＃解し顛く、そのた
め蒸着が難しいことによる。Recently, electron beam heating has been employed to heat the source material during vacuum deposition. This is because, in conventional resistance heating, substances with a high melting point, for example, T10°, are often difficult to vaporize.
ところて反射防止膜や保ＩＩ膜として多用されているも
のの甲で低屈折率物質として代表的なものは８１０２で
、也方高屈折率物貿として代表的なものはＴｉｅ２であ
り、これらを混合すれば混合比に応じて両者の中間の所
望の屈折率を奪する蒸着膜を作ることができる。By the way, 8102 is a typical low refractive index material that is often used as an antireflection film or a protective II film, and Tie2 is a typical high refractive index material. By doing so, it is possible to create a deposited film that takes away a desired refractive index between the two, depending on the mixing ratio.
しかしながら、Ｂ１０□とＴｌＯ２の粉末混合物ｔ−電
子ビーム加熱により蒸発させると、蒸発源物質が小さな
塊となって飛びはねる現象がみられ、そのため蒸着膜中
に小さな塊（＃Ｍ１業者はこれをプッという）が生じ、
曲品ｍ１ｌｌｉのない蒸着膜が得られる。However, when a powder mixture of B10□ and TlO2 is evaporated by t-electron beam heating, a phenomenon is observed in which the evaporation source material becomes small lumps and scatters, and therefore, the small lumps (#M1 manufacturer ) occurs,
A deposited film free of curved parts m1lli can be obtained.
そこで本発明１ｔが研死した結果、金属モリブテン粉末
の６加がその”ｍびはね”現象の抑制に著効がめること
を見い出した。Therefore, as a result of grinding the present invention 1t, it was found that addition of 6-addition of metal molybdenum powder is extremely effective in suppressing the "splashing" phenomenon.
しかしながら、 ｂｉｏｊ、 Ｔｉｅ、及び金属モリブ
デン（ＭＯ）の粉末混合′ｌ１ｌｌｔ蒸発源として電子
ビーム加熱により真空蒸着すると、蒸着膜が不拘負にな
り、七のため安定した光宇定ｌ！（屈折率・吸収係数）
を得ることが顛しく、実用化は無理であることが判った
。However, when a powder mixture of bioj, tie, and metal molybdenum (MO) is vacuum-deposited by electron beam heating as an evaporation source, the deposited film becomes unconstrained, resulting in a stable optical stability for seven reasons. (Refractive index/absorption coefficient)
It was found that it was difficult to obtain , and it was impossible to put it into practical use.
本発明者は、更に研兜を進め九結果、それらの粉＊混合
物をルス成形した後、真空焼結したものは、均質な蒸着
１１１ｉｔ与え、蒸着膜の元学定数が安定することを見
い出し、本発明を成すに至った。As a result of further research, the present inventor found that after Luth molding the powder* mixture and vacuum sintering, a homogeneous vapor deposition of 111 it was obtained, and the chemical constant of the vapor deposited film was stable. The present invention has been accomplished.
従って１本発明は８１０２． Ｔｉｅ２及び金属ＭＯか
らなる電子ビーム加熱真空蒸着用焼結体を提供する。Therefore, the present invention is 8102. Provided is a sintered body for electron beam heating and vacuum evaporation comprising Tie2 and metal MO.
本発明の焼結体に於いて、 ＥｌｉＯ，は２０〜９０重
量−１Ｔｉｏ２Ｈ１ｏ 〜８０１ｔ−（粉末混合＠を固
める為には１０重量−以上必要であり、蒸着膜が均質で
めり、安定した光学定数を得る為には８０重童★以Ｆで
おることｔ必賛とする）、金属ＭＯは０．５〜５０重重
う（１重量−以上にすると褐色に着色し７ｔ＃ｉ層膜が
得られる）ｔ−占めるが過当である。In the sintered body of the present invention, EliO is 20 to 90 weight -1Tio2H1o to 801t (10 weight or more is required to solidify the powder mixture), and the deposited film is homogeneous and smooth, resulting in stable optical properties. In order to obtain a constant, it is essential that the weight is less than 80 kg), and the metal MO is 0.5 to 50 weight (if it is over 1 weight, it will be colored brown and a 7t#i layer film will be obtained). ) t-occupies is unreasonable.
この焼結体を製造する九めには、各成分粉末をプレス圧
１〜２０ｔ／ａｌｌで所望の形状例えば直方体（２５Ｘ
２５Ｘ１５ｍ）にプレス成形し＊後、８００〜１５００
Ｃ、１０−１０Ｔｏｒｒ （７）雰囲ｆｉ中−ｔ’Ｊｉ
空ｍｌする。In the ninth step of manufacturing this sintered body, each component powder is pressed into a desired shape, such as a rectangular parallelepiped (25X
800~1500 after press forming *25x15m)
C, 10-10Torr (7) Atmosphere fi-t'Ji
Empty ml.
こうして侍られる本発明の焼結体に、電子ビーム加熱に
よる真空、ｌｉｍＫｆ用されるが、プツのない無色又は
褐色の透明で安定した光学定数を有する均質な蒸着膜を
与える。The sintered body of the present invention thus served is subjected to vacuum and limKf by electron beam heating to give a homogeneous vapor deposited film that is colorless or brown, transparent without lumps, and has stable optical constants.
次いで、実施例により本発明を具体的に説明する。Next, the present invention will be specifically explained with reference to Examples.
実施例１
８１０ａ％Ｔｉｅ、金属ＭＯの恵量慢比４７．６ ：
４７．６ ： ４．８からなる粉末混合物ｔ−５ｔ／ｃ
ｉｌのプレス圧でプレス成形した後、１２ｓＯＣ１１０
Ｔｏｒｒ テｂ 時間真空焼結することにより、２５Ｘ
２５Ｘ１５ Ｍの焼結体を得几。Example 1 810a%Tie, metal MO erectile ratio 47.6:
47.6: Powder mixture t-5t/c consisting of 4.8
After press molding with a press pressure of il, 12sOC110
By vacuum sintering for a time of 25X
A sintered body of 25×15 M was obtained.
このｇ細体ｔｇ発源として
真空度二５Ｘ１０ＴＯｒｒ
基板温［： ２００ Ｃ
蒸着速ｔＬ：厚さ冗λ／１０秒
の条件にてガラス板上に１ＩＡＮＩすると、プツのない
平滑で透明な蒸着膜（光学的膜厚％λ；λ−５０叫ｍ）
が得られ良。When 1IANI is applied to a glass plate under the conditions of vacuum degree 25 x 10 TOrr, substrate temperature [: 200 C, deposition rate tL: thickness λ/10 seconds], a smooth and transparent evaporated film ( Optical film thickness %λ; λ-50 m)
Good to get.
この蒸着膜は屈折率１．６４で褐色に着色しており、５
ＱＱ ｎｍの光の透過吸収率は３ｑｂ１６つ几。This vapor-deposited film is colored brown with a refractive index of 1.64, and has a refractive index of 1.64.
The transmission and absorption rate of QQ nm light is 3qb16.
実施例２
実施例１と同様に、Ｓｉｎ、 ：４１．７重ｔＳ、Ｔｉ
ｅ、 ＋４１．７電量チ、金ｇ Ｍｏ １６．６重量％
からなる焼結体を作り、蒸着を行なつ九ところ、プツの
ない平滑で褐色の蒸着１Ｍ（光学的緘厚冗λ：λ−５Ｑ
Ｑｎｍ）が得られた。この蒸着膜は屈折４１８３で、
５００皿の光の透過吸収率に１０％でめつ友。Example 2 As in Example 1, Sin, :41.7 weight tS, Ti
e, +41.7 coulometric power, gold g Mo 16.6% by weight
A sintered body consisting of 1M (optical thickness λ: λ-5Q) was prepared and vapor-deposited.
Qnm) was obtained. This deposited film has a refraction of 4183,
The light transmission and absorption rate of 500 plates is 10%.
出願人 日本光学工業株式会社 代理人 渡 辺 隆 男Applicant: Nippon Kogaku Kogyo Co., Ltd. Agent Takashi Wataribe
Claims (1)
る電子ビーム加熱真空蒸着用焼結体。A sintered body made of silicon dioxide, titanium dioxide, and metal molybdenum for electron beam heating and vacuum deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57011245A JPS58130275A (en) | 1982-01-27 | 1982-01-27 | Sintered body for vacuum deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57011245A JPS58130275A (en) | 1982-01-27 | 1982-01-27 | Sintered body for vacuum deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58130275A true JPS58130275A (en) | 1983-08-03 |
| JPS6151281B2 JPS6151281B2 (en) | 1986-11-08 |
Family
ID=11772550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57011245A Granted JPS58130275A (en) | 1982-01-27 | 1982-01-27 | Sintered body for vacuum deposition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58130275A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63192857A (en) * | 1987-02-05 | 1988-08-10 | Sumitomo Electric Ind Ltd | Method for producing superconducting thin films |
-
1982
- 1982-01-27 JP JP57011245A patent/JPS58130275A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63192857A (en) * | 1987-02-05 | 1988-08-10 | Sumitomo Electric Ind Ltd | Method for producing superconducting thin films |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6151281B2 (en) | 1986-11-08 |
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