JPS58123278A - solid-state image sensor - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solid-state imaging device that compensates for the temperature dependence of dark current.

The illumination is a perspective view of the solid-state imaging element, and the package I
K pellets 2 are shaken and sealed with a glass cap 3. The light passes through the glass cap 3 and enters, and hits the pellet 2.

FIG. 2 is a schematic diagram of the interior of a conventional pellet.

4 is a light receiving part that converts the input signal from a photodiode array into an electric signal, 5 is a horizontal outer N (11 on the right in the figure) of the receiver ytIs4, and 6Ut5'E.
This is a horizontal scanning circuit provided outside the I14MIiE direction (at the top of the figure). q! The entire surface of the light-receiving section 4 is scanned by r scanning times 4, and electrical and electrical signals are output.

In such a solid-state imaging element, a dark current generated when no source is incident becomes a problem. Conventionally, a diode was placed externally to compensate for the dark current, and a compensation circuit was formed by taking advantage of the fact that the reverse current of 7 is similar to the dark current of a solid-state imaging element. However, it is difficult to maintain exactly the same temperature due to the misalignment of the compensation circuit with the image element and the heat generation of the solid-state imaging confectionery itself. Since it is not exactly the same as the current, the compensation temperature range is narrow and it takes a lot of time to adjust the bridge.

For this reason, it has been considered to shield a portion of the original diode of the solid-state imaging element and use that portion as a compensation diode. In this case, it is theoretically best to use a solid-state imaging device with an angle of view of water, but it is necessary to use a 1710m small exposure device when producing a solid-state imaging device! Unfortunately, the size of the element exceeded the effective range of 10 - for this 1/1G11 small exposure device, making it impossible to produce 1lIi.

Also, the angle of view omm direction h 1/1017m small 1111t
Although there is plenty of room in the H11O shoulder area and there are no manufacturing problems, m appears during the period of being subject to pseudo signal zero interference called OIII smear, which is unique to solid-state image sensors.

Therefore, the object of the present invention is to provide a top diode that can be manufactured using a 1/104iI small device, has the same shape as the original diode,
It is an object of the present invention to provide a solid-state image sensor having a compensation element that can operate in the same manner.

FIG. 3 shows a pellet circle SOW of an embodiment of the solid-state image sensing device according to the present invention at approximately ■t! do. In the figure, the same reference numerals as in FIG. 2 are used for the parts KFi. 7 is a horizontal scanning circuit 6
Added another 5 to 15 steps to the right of j! :Scan path, 8 is horizontal scanning circuit 5Oql, 5th to 15th line O1lI arranged opposite l11 (upper side with -) to optical part 4
yt diode array.

This S diode array is basically the same as the photodiode array with 40 diodes in the light receiving section, and is scanned by an additional scanning circuit T with as many as possible with IIFi 100 to 40 in one row of photodiode teles. Each row is scanned in turn. Moreover, this -Y-canned diode array is covered with a black filter or a light blocking material such as aluminum, so that the light 11D incident on the light receiving section 4 is
The light has diminished to 1/100 to 1/1000.

Therefore, the auxiliary photodiode array that detects the 1f6 dark current in the ninth part of the compensation circuit is placed close to the same board as the light receiving section, so it experiences the same temperature change and is also the same as the light receiving section. Since they are in the shape of 10 and are created in the same process, they have both -041 characteristics.Furthermore, since they are operated with the same shift register and the clock jump is the same, the noise, 41, and the pseudo signal 1 are the same.

Accordingly, according to the present invention, the array of diodes does not expand in the horizontal direction and is arranged in the fII [direction, so that it satisfies the maximum pellet size limit of 10 cm for the 1/1011 small exposure position. Also, there is no shadow #t5ff on the ninth side opposite to the light receiving part of the horizontal scanning circuit.

Furthermore, since there is little difference in temperature between the pellets in the same pellet as the light-receiving part, and the shape of the photodiode is the same as that of the light-receiving part, the temperature dependence of the dark current is also the same.

The ninth effect is that complete dark current compensation can be performed. −□Figure Ilo Simple IIi
2 is a schematic diagram of the inside of a conventional pellet, and FIG. 3 is a schematic diagram of a pellet circular portion of an embodiment of the solid-state image sensing device according to the present invention.

2. Fist: Beret, 3. Glass cap, 4.
...Light receiving section, 5...Vertical scanning Nw1.6...
Horizontal scanning circuit, T...additional scanning circuit, 8...preliminary diode array.

Claims (1)

[Claims] Water! 11-circuit diode array and a dark current detection diode array that is shielded from light on the opposite side.