JPS58102546A - Resin sealed semiconductor device - Google Patents
Resin sealed semiconductor deviceInfo
- Publication number
- JPS58102546A JPS58102546A JP56202305A JP20230581A JPS58102546A JP S58102546 A JPS58102546 A JP S58102546A JP 56202305 A JP56202305 A JP 56202305A JP 20230581 A JP20230581 A JP 20230581A JP S58102546 A JPS58102546 A JP S58102546A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- epoxy resin
- resin
- sealing
- mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 22
- 239000011347 resin Substances 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 title claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000000843 powder Substances 0.000 claims abstract description 21
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 12
- 239000000945 filler Substances 0.000 claims abstract description 7
- 230000005260 alpha ray Effects 0.000 claims abstract description 6
- 230000002285 radioactive effect Effects 0.000 claims abstract description 6
- 150000003377 silicon compounds Chemical class 0.000 claims description 3
- 238000007789 sealing Methods 0.000 abstract description 27
- 239000003822 epoxy resin Substances 0.000 abstract description 22
- 229920000647 polyepoxide Polymers 0.000 abstract description 22
- 238000000034 method Methods 0.000 abstract description 4
- 239000000654 additive Substances 0.000 abstract description 2
- 239000006229 carbon black Substances 0.000 abstract description 2
- 239000003054 catalyst Substances 0.000 abstract description 2
- 238000004040 coloring Methods 0.000 abstract description 2
- 230000007062 hydrolysis Effects 0.000 abstract description 2
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 238000000746 purification Methods 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 7
- 229910052906 cristobalite Inorganic materials 0.000 abstract 7
- 229910052682 stishovite Inorganic materials 0.000 abstract 7
- 229910052905 tridymite Inorganic materials 0.000 abstract 7
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- 239000004848 polyfunctional curative Substances 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- 230000001186 cumulative effect Effects 0.000 description 11
- 230000015654 memory Effects 0.000 description 8
- 229910002026 crystalline silica Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は樹脂封止形半導体装置に係り、特にその半導
体チップ封止用樹脂（以下「封止用樹脂」と略称する）
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resin-sealed semiconductor device, and particularly to a resin for encapsulating a semiconductor chip (hereinafter abbreviated as "sealing resin").
It is related to.
通常、樹脂封止形半導体装置では、封止用樹脂として、
エポキシ樹脂、シリコーン樹脂などが用いられている。Usually, in resin-sealed semiconductor devices, the encapsulating resin is
Epoxy resin, silicone resin, etc. are used.
しかし、これらの封止用樹脂の熱膨張係数が半導体チッ
プの熱膨張係数より大きく、しかもこれらの封止用樹脂
の熱伝導率が小さいので、半導体チップの動作時に発生
する熱を外部へ効率よく放散させることが容易ではなく
、この発生熱による温度上昇によってこれらの封止用樹
脂と半導体チップとの間に熱膨張係数の差による熱応力
が生じ、この熱応力によってこれらの封止用樹脂が破損
されて半導体チップの電気的特性が劣化し、信頼性が低
下することがある。これを防止するために１熱膨張係数
が小さく、しかも熱伝導率が大龜＜、かつ機械的強度の
大きい封止用樹脂が要求されている。この要求を満足さ
せるために、従来、天然結晶シリカの微粉末または天然
結晶シリカを高温溶融再生成させた溶融シリカの微粉末
を充填材として数重量パーセントないし８０重量パーセ
ント混入させた封止用樹脂（以下「シリカ混入封止用樹
脂」と呼ぶ）が用いられていた。However, the thermal expansion coefficient of these encapsulating resins is larger than that of the semiconductor chip, and the thermal conductivity of these encapsulating resins is low, so it is difficult to efficiently transfer the heat generated during the operation of the semiconductor chip to the outside. It is not easy to dissipate, and the temperature rise caused by this generated heat causes thermal stress due to the difference in thermal expansion coefficient between these encapsulating resins and the semiconductor chip, and this thermal stress causes these encapsulating resins to If damaged, the electrical characteristics of the semiconductor chip may deteriorate and reliability may decrease. In order to prevent this, a sealing resin is required that has a small thermal expansion coefficient, a large thermal conductivity, and a high mechanical strength. In order to satisfy this requirement, conventionally, sealing resins have been mixed with a few weight percent to 80 weight percent of fine powder of natural crystalline silica or fine powder of fused silica obtained by regenerating natural crystalline silica by high temperature melting as a filler. (hereinafter referred to as "silica-containing sealing resin") was used.
近年、半導体装置、特に大規模半導体メモリ集積回路装
置（以下ｒ Ｔ、ＢＮメモリ」と呼ぶ）では、高密度集
積化に伴い、メモリセル相互間の間隔が縮少され、メモ
リセルの容量が小さくなったので、自然界に存在するα
線によってメモリセルのメモリが反転するソフトエラー
現象が間聴視されている０
ところで、シリカ混入封止用樹脂を用いた従来の樹脂封
止形ＬＳＩメモリでは、天然結晶シリカまたは溶融シリ
カの微粉末中にα線の発生源になるウラン（Ｕ）、’）
リウム（ト）などの放射性同位元素が含有されているの
で、これらの放射性同位元素からのα線によってソフト
エラーが発生するおそれがあった。このソフトエラーの
発生を抑制するために、ＬＳＩメモリの半導体チップを
シリカ混入封止用樹脂で封止する繭段階において、ＬＳ
Ｉメモリの半導体チップの表面上に放射性同位元素から
のα線のエネルギーを減衰させるポリイミド樹脂などの
有機物の被膜を形成する処理を施さねばならないという
欠点があった。In recent years, semiconductor devices, especially large-scale semiconductor memory integrated circuit devices (hereinafter referred to as BN memories), have become more densely integrated, and as a result, the spacing between memory cells has become smaller and the capacity of the memory cells has become smaller. Therefore, α that exists in nature
A soft error phenomenon in which the memory of a memory cell is reversed due to a line has been observed for a while.By the way, in conventional resin-encapsulated LSI memories that use silica-containing encapsulation resin, fine powder of natural crystalline silica or fused silica is used. Uranium (U), which is a source of alpha rays,
Since it contains radioactive isotopes such as lithium (t), there is a risk that soft errors may occur due to alpha rays from these radioactive isotopes. In order to suppress the occurrence of this soft error, the LSI memory is
There is a drawback in that an organic film such as polyimide resin that attenuates the energy of alpha rays from radioisotopes must be formed on the surface of the semiconductor chip of the I-memory.
この発明は、上述の欠点Ｖｃｓみてなされたもので、α
線源となる放射性同位元素の含有量の少ない気相状態に
したケイ素化合物から生成された二酸化ケイ素（ｓｔｏ
２）の微粉末を充填材として混入させた５１０２混入封
止用樹脂を用いることによって、半導体チップの表面上
にａ線のエネルギーを減衰させる有機物の被膜を形成す
る処理を省略または簡素化できるようにした樹脂封止形
半導体装置を提供することを目的とする０
以下、この発明の一実施例について説明する０α線源と
なる放射性同位元素の含有量の少ない四塩化ケイ素（５
ｔｃ１！４）を原料とし、下記〔１）式に示すような酸
水素炎による加水分解、または下記〔口〕式に示すよう
なプラズマ炎による酸化によって、５１ｏ２塊を生成す
る。This invention was made in view of the above-mentioned drawbacks of Vcs, and α
Silicon dioxide (sto
By using the 5102-containing sealing resin in which the fine powder of 2) is mixed as a filler, it is possible to omit or simplify the process of forming an organic film that attenuates the energy of the A-ray on the surface of the semiconductor chip. The purpose of this invention is to provide a resin-sealed semiconductor device with a low radioisotope content.
Using tc1!4) as a raw material, 51o2 lumps are produced by hydrolysis using an oxyhydrogen flame as shown in the following formula [1] or oxidation using a plasma flame as shown in the following [mouth] formula.
５ｉＯ１４＋ ０２ ＋ ２Ｈ２−−５ｉ０２ ＋ ４
ＨＣ１−−−−（ＤＳｉａＶ４ ＋ ｏ２ −８１０
２ ＋ ２０／２−−−−（１１）このように生成され
た８１０２塊を８１０２微粉末に粉砕し、この５ｔｏ２
＠粉末の粒匝分布を整えたのち、この５ｔｏ２微粉末
に不純物イオンなどを除去する精製処理を施すと、充填
材用の８１０２微粉末が得ら□れる。5iO14+ 02 + 2H2--5i02 + 4
HC1----(DSiaV4 + o2 -810
2 + 20/2---(11) The 8102 lump thus produced is ground into 8102 fine powder, and this 5to2
After adjusting the particle size distribution of the powder, this 5to2 fine powder is subjected to a purification treatment to remove impurity ions, etc., to obtain 8102 fine powder for filler.
このようにして得られた５１０２微粉末とエポキシ樹脂
と硬化剤、触媒、着色用カーボンブラックなどの添加物
とを、この８１０２微粉末が７０′Ｎ量パ 。The 5102 fine powder thus obtained, an epoxy resin, and additives such as a curing agent, a catalyst, and carbon black for coloring were mixed with the 8102 fine powder in an amount of 70'N.
−セントになるように、配合混練すると、この実施例に
用いられる５１０２混入封止用エポキシ樹脂が得られる
。-cent, the 5102-containing sealing epoxy resin used in this example is obtained.
この８１０２混入封止用エポキシ樹脂のα線累積発生数
と副定時間との関係を、低バツクグラウンドα線測定器
を用いて測定した結禾の一例を図に示す。The figure shows an example of the relationship between the cumulative number of alpha rays generated and the sub-time period of this 8102-containing sealing epoxy resin, measured using a low background alpha ray measuring device.
図において、伸軸は５１０２混入封止用エポキシ樹脂の
α＃累積発生数を示し、横軸は測定時間を示す。符号（
イ）Ｆｉこの実施例に用いられる５１０２混入！ｔ′１
止用エポキシ樹脂のＵ＃累積発生数、一点鎖線で示す相
方（ロ）はこのヂ施例に用いられる８１０２混入封止用
エポキシ樹脂と同一配合比の従来用いられていたシリカ
混入制止用エポキシ樹脂のａ線累積発生数である。In the figure, the elongated axis indicates the cumulative number of occurrences of α# of the 5102-containing sealing epoxy resin, and the horizontal axis indicates the measurement time. sign (
b) Fi 5102 used in this example! t′1
The cumulative number of occurrences of U# in the sealing epoxy resin, the partner (B) indicated by the dashed line is the conventionally used silica-containing epoxy resin with the same blending ratio as the 8102-containing sealing epoxy resin used in this example. This is the cumulative number of a-line occurrences.
図から判るように、この実施例に用いられる５１０２混
入封止用エポキシ樹脂のα線累積発生数は従来用いられ
ていたシリカ混入封止用エポキシ樹脂のα線累積発生数
のほぼ１１５に低減している。従って、このようなε１
０２混入封市用エポキシ樹脂を用いたこの実施例の樹脂
封止形半導体装置では、その半導体チップの表面上にα
線のエネルギーを減衰させる有機物の被膜を形成する処
理を省略またはｆｒ累化することができる。特に、この
５ｔｏ２混入封止用エポキシ樹脂を用いた樹脂封止形Ｌ
ＳＩメモリでは、α線によるソフトエラーの発生を抑制
することができる。As can be seen from the figure, the cumulative number of alpha rays generated by the 5102-containing sealing epoxy resin used in this example was reduced to approximately 115, which is the cumulative number of alpha rays generated by the conventionally used silica-containing sealing epoxy resin. ing. Therefore, such ε1
In the resin-sealed semiconductor device of this example using commercial grade epoxy resin mixed with 0.02, α
The process of forming an organic film that attenuates the energy of the rays can be omitted or repeated. In particular, resin-sealed type L using this 5to2 mixed sealing epoxy resin.
In SI memory, it is possible to suppress the occurrence of soft errors due to alpha rays.
ナオ、この実施例では、７０重量パーセントの８１０２
微粉末を充填材としてエポキシ樹脂に混入させた５１０
２混入封止用エポキシ樹脂を用いたが、必ずしも’／
Ｏｇ 量パーセントの８１０２微粉末に限定する必要が
なく、その他の重量パーセントの５１ｏ２微粉末であっ
てもよく、また必ずしもエポキシ樹脂に限定する必要が
なく、シリコーン樹脂などのその他の樹脂に５ｔｏ２
＠粉末を混入させたものであってもよい。更に、この実
施例では、気相状態にした５ｉＯＩ！４から生成された
５１０２について述べたが、この発明はこれに限らず、
その他の気相状態にしたケイ素化合物から生成された８
１０２についても適用することができる。Nao, in this example, 70 weight percent 8102
510 made by mixing fine powder into epoxy resin as a filler
2 mixed sealing epoxy resin was used, but it is not necessarily '/
It is not necessary to limit it to 8102 fine powder with Og amount percent, and it may be 5102 fine powder with other weight percent, and it is not necessarily limited to epoxy resin, and 5to2 can be used with other resins such as silicone resin.
@It may be mixed with powder. Furthermore, in this example, 5iOI! in a gaseous state was used. 5102 generated from 4 has been described, but the present invention is not limited to this.
8 produced from other silicon compounds in a gaseous state
102 can also be applied.
以上、説明したようｒＣｌこの発明の樹脂封止形半導体
装置では、α線源となる放射性同位元素の含有量の少な
い気相状態にしたケイ素化合物から生成されｔ（Ｏ１０
２微粉末を充填材として混入させた５１０２混入封止用
樹脂を用いているので、この５ｔｏ２混入封止用樹脂の
α線累積発生数を従来用いられていたシリカ混入封止用
樹脂のα線累積発生数より低減させることが可能となり
、半導体チップの表面上にα線のエネルギーを減衰させ
る有機物の被膜を形成する処理を省略または簡素化する
ことがで色る。特に、上記５１０２混入封止用樹脂を用
いた樹脂封止形Ｌ８エメそりでは、α線によるソフトエ
ラーの発生を抑制することができる。As explained above, in the resin-sealed semiconductor device of the present invention, rCl is generated from a silicon compound in a gaseous state with a low content of radioactive isotopes that serve as an α-ray source.
Since we use a 5102-containing sealing resin in which 5to2 fine powder is mixed as a filler, the cumulative number of α-rays generated by this 5to2-containing sealing resin is equal to the α-rays of the conventionally used silica-containing sealing resin. This makes it possible to reduce the cumulative number of occurrences, and to omit or simplify the process of forming an organic coating on the surface of a semiconductor chip that attenuates the energy of alpha rays. In particular, in the resin-sealed L8 emitter using the 5102-containing sealing resin, the occurrence of soft errors due to alpha rays can be suppressed.
図はこの発明の一実施例に用いられる５１０２混入封止
用エポキシ樹脂のα線累積発生数と測定時間との関係の
一例を示す図である。
図において、符号（イ）Ｈ上記実施例に用いられる８１
０２混入封止用エポキシ樹脂のα＃累積発生数、符号（
ロ）は従来用いられていたシリカ′混入封止用エポキシ
樹脂のα線累積発生数である。
代理人 藝 野 侶 −（ほか−名）測す情（分）
手続補正書（自−）
昭和 ５７［５月１１日
特許庁長官殿
１− ＩＧ （’Ｌ 〕表示 特願昭５６−
２０２３０５号２、発明の名称 樹脂封止形牛導体
装置３、補正をする者
１１件との関係 特許出願人
ミ
５、 補正の対象
明細書の発明の詳細な説明の掴
６、補正の内野
（１） 明細書の第１頁第１７行〜第２負第５行にＵ
大きく、シかも一一−−−信頼性が低下することがある
。」とめるのを、［大きいので、半導体チップおよび構
成材料に内部応力が加わり、電気的特性および信頼性が
低下し、史には封止用樹脂が破断することがある。また
、封止用樹脂の熱伝導率が小さいので、半導体テップの
動作時に発生する熱を外部へ効率よく放散させることが
容易ではなく、発生熱による温度上昇によって半導体チ
ップの破壊が起こることがある。」と訂正する。
以上The figure is a diagram showing an example of the relationship between the cumulative number of alpha rays generated and the measurement time of the 5102-containing sealing epoxy resin used in one embodiment of the present invention. In the figure, the symbol (a) H is 81 used in the above embodiment.
02 α# Cumulative number of occurrences of mixed sealing epoxy resin, sign (
b) is the cumulative number of alpha rays generated by the conventionally used epoxy resin mixed with silica for sealing. Agent: Mr. Geino - (and others) Measuring feelings (min.) Procedural amendment (auto) May 11, 1972 To the Commissioner of the Japan Patent Office 1 - IG ('L) Indication Patent application 1982 -
No. 202305 No. 2, Title of the invention Resin-sealed conductor device 3, Relationship with 11 amendments Patent applicant Mi 5, Detailed description of the invention in the specification subject to amendment 6, Infield of amendment ( 1) U on page 1, line 17 to second negative line 5 of the specification
The reliability may be reduced. Due to the large size, internal stress is applied to the semiconductor chip and its constituent materials, reducing electrical characteristics and reliability, and in some cases, the sealing resin may break. Furthermore, since the thermal conductivity of the sealing resin is low, it is not easy to efficiently dissipate the heat generated during the operation of the semiconductor chip to the outside, and the semiconductor chip may be destroyed due to the temperature rise due to the generated heat. . ” he corrected. that's all
Claims (1)
気相状態にしたケイ素化合物から生成された二酸化ケイ
素微粉末を充填材として混入させた樹脂を用いて半導体
チップを封止してなることを製置とする樹脂封止形半導
体装置。(1) A semiconductor chip is encapsulated using a resin mixed with silicon dioxide fine powder as a filler, which is produced from a silicon compound in a gaseous state with a low content of radioactive isotopes that serve as an alpha ray source. Resin-encapsulated semiconductor devices manufactured by
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56202305A JPS58102546A (en) | 1981-12-14 | 1981-12-14 | Resin sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56202305A JPS58102546A (en) | 1981-12-14 | 1981-12-14 | Resin sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58102546A true JPS58102546A (en) | 1983-06-18 |
Family
ID=16455336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56202305A Pending JPS58102546A (en) | 1981-12-14 | 1981-12-14 | Resin sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58102546A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58127354A (en) * | 1982-01-25 | 1983-07-29 | Shin Etsu Chem Co Ltd | Semiconductor element sealing resin composition material |
| JPS6047032A (en) * | 1983-08-24 | 1985-03-14 | Oki Electric Ind Co Ltd | Production of tablet |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57195151A (en) * | 1981-05-27 | 1982-11-30 | Denki Kagaku Kogyo Kk | Low-radioactive resin composition |
| JPS5863152A (en) * | 1981-10-09 | 1983-04-14 | Fujikura Ltd | Material for sealing semiconductor element |
-
1981
- 1981-12-14 JP JP56202305A patent/JPS58102546A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57195151A (en) * | 1981-05-27 | 1982-11-30 | Denki Kagaku Kogyo Kk | Low-radioactive resin composition |
| JPS5863152A (en) * | 1981-10-09 | 1983-04-14 | Fujikura Ltd | Material for sealing semiconductor element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58127354A (en) * | 1982-01-25 | 1983-07-29 | Shin Etsu Chem Co Ltd | Semiconductor element sealing resin composition material |
| JPS6047032A (en) * | 1983-08-24 | 1985-03-14 | Oki Electric Ind Co Ltd | Production of tablet |
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