JPS58102181A - X ray spectroscopy - Google Patents
X ray spectroscopyInfo
- Publication number
- JPS58102181A JPS58102181A JP56201386A JP20138681A JPS58102181A JP S58102181 A JPS58102181 A JP S58102181A JP 56201386 A JP56201386 A JP 56201386A JP 20138681 A JP20138681 A JP 20138681A JP S58102181 A JPS58102181 A JP S58102181A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- photoelectrons
- kinetic energy
- measured
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000441 X-ray spectroscopy Methods 0.000 title description 2
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000004611 spectroscopical analysis Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000005259 measurement Methods 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 239000001307 helium Substances 0.000 abstract description 2
- 229910052734 helium Inorganic materials 0.000 abstract description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000002798 spectrophotometry method Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/227—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はXlll11特に波長17〜23′Aの範囲の
軟X@の波長と強度を簡単に測定できるXs分分光に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to Xs spectroscopy that allows easy measurement of the wavelength and intensity of soft X@ in the wavelength range of 17 to 23'A.
従来のX41分光法は、■半導体検出器を用いるもの、
■回折結晶(又は回折格子)を用いるものに大別され、
ざらに■はΦ回折結晶(又は回折格子)を−一ランド円
周上に移動させつつ計るもの、@回折結晶(又は回折格
子)の置かれた讐−ランド円と同一の胃−ランド円周上
にX1lyイルムを設置するものにわけられる。ところ
で、これらのX!1分光法のうち、■は半導体検出器の
応答速度の点で/psac以下の短いパルスX!Iの分
光光度測定に不適であるはか、波長101以上の軟X線
の検出・分光が困難である。亥た■のΦはパルスX線の
分光光度測定には長時間を要し、実用的でない。また更
に0のo+−xxtsの波長が長くなるに従らて回折結
晶(又は回折格子)の焦点が伸びるためにi置が大形化
する欠点がある。 ゛本発明は上記の事情に鑑
み、パルス放射のX@。Conventional X41 spectroscopy uses a semiconductor detector;
■It is roughly divided into those using diffraction crystals (or diffraction gratings).
Roughly ■ is measured while moving the Φ diffraction crystal (or diffraction grating) on -1 land circumference, @the same stomach-land circumference as the opposite land circle where the diffraction crystal (or diffraction grating) is placed. It can be divided into those with X1ly illumination installed on top. By the way, these X! 1 spectroscopy, ■ is a short pulse X! of less than / psac in terms of the response speed of the semiconductor detector. Not only is it unsuitable for spectrophotometric measurement of I, but it is also difficult to detect and analyze soft X-rays with wavelengths of 101 or more. Φ of (2) requires a long time for spectrophotometric measurement of pulsed X-rays, and is not practical. Furthermore, as the wavelength of 0 o+-xxts becomes longer, the focal point of the diffraction crystal (or diffraction grating) becomes longer, so there is a drawback that the i-position becomes larger.゛In view of the above circumstances, the present invention utilizes pulsed radiation X@.
連続放射のに線を問わずに軟X線の分光光度の測定が可
能であり、かつ使用する装置の小形化を計ることのでき
るXII分光法を提供するもので、−素に分光すべきX
線を照射し、放出する光電子の運動エネルギーおよび量
を測定することにより波長域l!〜30χの軟XImの
波長および強度を測定することを特徴とするものである
。This provides XII spectroscopy, which allows the spectrophotometric measurement of soft X-rays regardless of the line of continuous radiation, and which allows the equipment used to be miniaturized.
By irradiating a beam and measuring the kinetic energy and amount of emitted photoelectrons, the wavelength range l! It is characterized by measuring the wavelength and intensity of soft XIm of ~30χ.
以下、本発明を図面を参照して詳細に開明する。Hereinafter, the present invention will be disclosed in detail with reference to the drawings.
#I1図は本発明の一実施例を示す図であって、この図
においてlは分光すべきX線、3は金属基板、8は冷却
器、会は酸素吸着層、2は光電子、6は光電子の運動エ
ネルギー弁別器、テは真空1器である。#I1 is a diagram showing an embodiment of the present invention, in which l is the X-ray to be separated, 3 is the metal substrate, 8 is the cooler, 2 is the oxygen adsorption layer, 2 is the photoelectron, and 6 is the The photoelectron kinetic energy discriminator, Te, is a single vacuum device.
金属基板3は清浄な状態に仕上げられたものであって、
例えば液体ヘリウムなどを満した冷却器Sによって充分
に冷却され、その表面には酸素ガスを吸着させることに
より酸l!吸着層慟が形成されている。これに分光すべ
きX1llを照射すれば酸素吸着層から光電子iが放出
される。The metal substrate 3 is finished in a clean state,
For example, it is sufficiently cooled by a cooler S filled with liquid helium, etc., and by adsorbing oxygen gas on its surface, acid l! An adsorption layer is formed. When this is irradiated with X1ll to be dispersed, photoelectrons i are emitted from the oxygen adsorption layer.
通常酸素のに軌道電子はj3t≦eVの結合エネルギー
で原子核と結合して安全状態を保っているが、振動数ν
のX@の照射をうけると励起されてb y−XII、4
(−Elk)eVの運動エネルギーを持った光電子と
なって真空中にとび出して来る。X線が種々の振動数を
含んでいるとそれに応じて光電子の運動エネルギーBk
もさ重ざまな値をとる。そこで光電子器を運動エネルギ
ー弁別器6に導いて運動エネルギーを測定し、同時に光
電子の量を測定すれば、XIII波長に対応した運動エ
ネルギーと光度に対応した光電子量として第2図に示す
ようなスペク)ルが得られる。これによりX線の分光光
度が測定される。これらの測定は空気によるXIIの吸
収、光電子の散乱を防止するために真空容器フの中で行
われる。この測定に際し、運動エネルギー弁別器として
写真フィル五タイプのものを用いればX線が短いパルス
の場合にも分光が可能である。Ordinarily, the orbital electrons of oxygen bond with the atomic nucleus with a binding energy of j3t≦eV and maintain a safe state, but the vibration frequency ν
When it is irradiated with X@, it is excited and b y-XII, 4
It becomes a photoelectron with a kinetic energy of (-Elk)eV and jumps out into the vacuum. When X-rays contain various frequencies, the kinetic energy Bk of photoelectrons changes accordingly.
It takes a variety of values. Therefore, if a photoelectronic device is guided to the kinetic energy discriminator 6 and the kinetic energy is measured, and the amount of photoelectrons is measured at the same time, the spectrum as shown in FIG. ) is obtained. In this way, the spectrophotometric intensity of X-rays is measured. These measurements are performed in a vacuum chamber to prevent absorption of XII and scattering of photoelectrons by air. In this measurement, if a five-type photographic film is used as a kinetic energy discriminator, spectroscopy is possible even when the X-ray is a short pulse.
なお、XII波長カh 1 < j J /、4 @
V01件1満す場合、つまり波長がsad以上の波長域
では光電子は極端に減衰する。振動数νのX!Ill射
をうけた酸素はオージェ効果によりic#l−711よ
3eVの光電子も放出するからh*>71よ!なる振動
数に対応する波長tttl以下のX線の分光には不適で
ある。In addition, XII wavelength power h 1 < j J /, 4 @
When V01 condition 1 is satisfied, that is, photoelectrons are extremely attenuated in the wavelength range of SAD or more. X of frequency ν! Oxygen subjected to illumination also emits photoelectrons of IC#l-711 3 eV due to the Auger effect, so h*>71! It is unsuitable for spectroscopy of X-rays with a wavelength below tttl corresponding to the frequency.
したがって酸素吸着層を用いる場合の測定可能なx11
波長は17〜JJ!である。Therefore, measurable x11 when using an oxygen adsorption layer
The wavelength is 17~JJ! It is.
重た、第3図は本発明の別の実施例を示す図である。こ
の図において第1WJと同一の構成要素には同一符号を
付しである。この図において酸素ガス9はノズルlOを
通ってxsm射1111内に導かれる。室11内に導か
れた酸素ガスには室11のXaI照射孔1mを通して分
光すべきX1m1が照射される。室11内で得られる光
電子は第1図の場合と内機に運動エネルギー弁別器6に
導かれる。FIG. 3 is a diagram showing another embodiment of the present invention. In this figure, the same components as those of the first WJ are given the same reference numerals. In this figure, oxygen gas 9 is directed into xsm radiation 1111 through nozzle lO. The oxygen gas led into the chamber 11 is irradiated with X1m1 to be separated through the XaI irradiation hole 1m of the chamber 11. Photoelectrons obtained in the chamber 11 are guided to the kinetic energy discriminator 6 in the case of FIG.
かくしてこの運動エネルギー弁別器6に場かに第1図の
場合と同様の測定を行うことによりX1sの分光光度を
測定することができる。なお、図において18.14は
各々酸素ガスによるX線の吸収、光−子の散乱を防ぐた
めxma射1i 11 %真空容器γ内を排気する排気
口である。Thus, by performing measurements similar to those shown in FIG. 1 on this kinetic energy discriminator 6, the spectrophotometric intensity of X1s can be measured. In the figure, reference numerals 18 and 14 are exhaust ports for evacuating the inside of the vacuum chamber γ for 1i 11% x-ray radiation in order to prevent absorption of X-rays and scattering of photons by oxygen gas.
以上説明したように、本発明は光電子の運動エネルギー
および量を測定することによりX線の分光を行う。この
本発明によれば、パルス放射のX線、連続放射のXII
を聞わずに軟X線の分光光度の測定を行うことが可能で
あり、かつ使用する装置を小形化できる利点がある。As explained above, the present invention performs X-ray spectroscopy by measuring the kinetic energy and quantity of photoelectrons. According to the present invention, X-rays of pulsed radiation, XII of continuous radiation
This method has the advantage that it is possible to measure the spectrophotometry of soft X-rays without hearing the noise, and that the equipment used can be made smaller.
第1WJは本発明の一実施例を示す開明図、第2図は同
実施例において測定される光電子の強度と運動エネルギ
ーとの関係を示す図、第3図は本発明の別の実施例を示
す説明図である。
l・・・・・・Xls、 s・・・・・・金属基板、8
・・・・・・冷却器、会・・・・・・酸素の吸着層、器
・・・・・・光電子、6・・・・・・運動エネルギー弁
別器、7・・・中真空容器、9・・・・・・酸素ガス、
lO・・・・・・ノズル、ll・・・・−xmm射室1
Iml・・・・・・X1s照射孔。
出願人 日本電信電話公社
第1図
f
第2図
運◆bエネルキ゛−
第3図
451st WJ is a diagram showing one embodiment of the present invention, FIG. 2 is a diagram showing the relationship between the intensity and kinetic energy of photoelectrons measured in the same embodiment, and FIG. 3 is a diagram showing another embodiment of the present invention. FIG. l...Xls, s...Metal substrate, 8
...Cooler, unit...Oxygen adsorption layer, vessel...Photoelectron, 6...Kinetic energy discriminator, 7...Medium vacuum container, 9...Oxygen gas,
lO...Nozzle, ll...-xmm firing chamber 1
Iml...X1s irradiation hole. Applicant: Nippon Telegraph and Telephone Public Corporation Figure 1 f Figure 2 Lun◆b Energy Figure 3 45
Claims (1)
動エネルギーおよび量を測定することにより波長域17
〜23xのIIkX線の波長および強度を測定すること
を特徴上するX1m分光法。By irradiating oxygen with xII to be spectrally dispersed and measuring the interlocking energy and amount of emitted photoelectrons, wavelength range 17
X1m spectroscopy characterized by measuring the wavelength and intensity of IIk X-rays at ~23x.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56201386A JPS58102181A (en) | 1981-12-14 | 1981-12-14 | X ray spectroscopy |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56201386A JPS58102181A (en) | 1981-12-14 | 1981-12-14 | X ray spectroscopy |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58102181A true JPS58102181A (en) | 1983-06-17 |
Family
ID=16440218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56201386A Pending JPS58102181A (en) | 1981-12-14 | 1981-12-14 | X ray spectroscopy |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58102181A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5483893A (en) * | 1977-11-29 | 1979-07-04 | Anvar | Microanalysis method that use xxrays radiation |
-
1981
- 1981-12-14 JP JP56201386A patent/JPS58102181A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5483893A (en) * | 1977-11-29 | 1979-07-04 | Anvar | Microanalysis method that use xxrays radiation |
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