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JPS5794998A - Nonvolatile semiconductor memory - Google Patents

Nonvolatile semiconductor memory

Info

Publication number
JPS5794998A
JPS5794998A JP17052680A JP17052680A JPS5794998A JP S5794998 A JPS5794998 A JP S5794998A JP 17052680 A JP17052680 A JP 17052680A JP 17052680 A JP17052680 A JP 17052680A JP S5794998 A JPS5794998 A JP S5794998A
Authority
JP
Japan
Prior art keywords
row
stand
high voltage
input
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17052680A
Other languages
Japanese (ja)
Other versions
JPS6051200B2 (en
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55170526A priority Critical patent/JPS6051200B2/en
Publication of JPS5794998A publication Critical patent/JPS5794998A/en
Publication of JPS6051200B2 publication Critical patent/JPS6051200B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Hardware Redundancy (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

PURPOSE:To rewrite part of the contents of a memory cell array easily in a short time by providing a stand-by decoder composed of a nonvolatile semiconductor memory element wherein address data is writable. CONSTITUTION:Address data inputs A0-Ai and an input R/P1' are held at a level 0, inputs A0'-Ai' and an input R'/P1 are set to a high voltage, and a program pulse Vp having the high voltage is applied to a power terminal 16. Then, a transistor (TR) TE turns off and a TRTE' turns on to apply the high voltage to TRs T'0-T'i, and an address of A0-Ai=0 is assigned to a row line R'1. For this purpose, A0-Ai=0, A0'-Ai'=1(Vc); and R/P1'=1 and R'/P1 =0 to set a readout state. Then, the decoding output of a stand-by row decoder 11 goes to the level 1 and the row lines R'1 is selected, thereby newly writing input data supplied to a memory cell on the row line R'1 separately by applying a writing voltage to the writing circuit of a stand-by row buffer circuit 13.
JP55170526A 1980-12-03 1980-12-03 UV-erasable nonvolatile semiconductor memory Expired JPS6051200B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55170526A JPS6051200B2 (en) 1980-12-03 1980-12-03 UV-erasable nonvolatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55170526A JPS6051200B2 (en) 1980-12-03 1980-12-03 UV-erasable nonvolatile semiconductor memory

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59036719A Division JPS59185099A (en) 1984-02-28 1984-02-28 Nonvolatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5794998A true JPS5794998A (en) 1982-06-12
JPS6051200B2 JPS6051200B2 (en) 1985-11-12

Family

ID=15906564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55170526A Expired JPS6051200B2 (en) 1980-12-03 1980-12-03 UV-erasable nonvolatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS6051200B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217293A (en) * 1983-05-25 1984-12-07 Nec Corp Semiconductor integrated circuit
JPS61120400A (en) * 1984-11-14 1986-06-07 Fujitsu Ltd Semiconductor memory
JPS6433800A (en) * 1987-07-29 1989-02-03 Toshiba Corp Semiconductor memory

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217293A (en) * 1983-05-25 1984-12-07 Nec Corp Semiconductor integrated circuit
JPH0120520B2 (en) * 1983-05-25 1989-04-17 Nippon Electric Co
JPS61120400A (en) * 1984-11-14 1986-06-07 Fujitsu Ltd Semiconductor memory
JPS6433800A (en) * 1987-07-29 1989-02-03 Toshiba Corp Semiconductor memory
JPH0568800B2 (en) * 1987-07-29 1993-09-29 Toshiba Kk

Also Published As

Publication number Publication date
JPS6051200B2 (en) 1985-11-12

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