JPS5769259A - Voltage detecting circuit - Google Patents
Voltage detecting circuitInfo
- Publication number
- JPS5769259A JPS5769259A JP14519080A JP14519080A JPS5769259A JP S5769259 A JPS5769259 A JP S5769259A JP 14519080 A JP14519080 A JP 14519080A JP 14519080 A JP14519080 A JP 14519080A JP S5769259 A JPS5769259 A JP S5769259A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- constitution
- power source
- threshold voltage
- inverter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910044991 metal oxide Inorganic materials 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
- G01R19/16519—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using FET's
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Current Or Voltage (AREA)
Abstract
PURPOSE:To sense the decrease in the voltage of a load accurately, by obtaining a constitution wherein a reference voltage itself is not subjected to the effect of a threshold voltage of a metallic oxide semiconductor, and compensating said threshold voltage of the metallic oxide semiconductor. CONSTITUTION:A series circuit of resistors R1 and R2 generates the reference voltage corresponding to the voltage variation in a power source connected to input terminals 1 and 2. At N channel MOS transistor Tr1 outputs a voltage corresponding to the reference voltage and a threshold voltage of an N channel MOS transistor Tr2. Said voltage is applied to the gate of Tr2, and its ON resistance is varied. When the power source voltage is decreased and the voltage generated at the input terminal of the inverter 5 becomes larger than the threshold voltage of the inverter 5 due to the resistance value of Tr2 and a resistor RL, the output is changed from a high level to a low level. In this constitution, the decrease in the power source voltage such as a battery can be accurately sensed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14519080A JPS5769259A (en) | 1980-10-17 | 1980-10-17 | Voltage detecting circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14519080A JPS5769259A (en) | 1980-10-17 | 1980-10-17 | Voltage detecting circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5769259A true JPS5769259A (en) | 1982-04-27 |
Family
ID=15379499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14519080A Pending JPS5769259A (en) | 1980-10-17 | 1980-10-17 | Voltage detecting circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5769259A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0634750A2 (en) * | 1993-07-12 | 1995-01-18 | Kabushiki Kaisha Toshiba | Apparatus and method for reading multi-level data stored in a semiconductor memory |
-
1980
- 1980-10-17 JP JP14519080A patent/JPS5769259A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0634750A2 (en) * | 1993-07-12 | 1995-01-18 | Kabushiki Kaisha Toshiba | Apparatus and method for reading multi-level data stored in a semiconductor memory |
EP0634750A3 (en) * | 1993-07-12 | 1996-01-10 | Toshiba Kk | Apparatus and method for reading multi-level data stored in a semiconductor memory. |
US5852575A (en) * | 1993-07-12 | 1998-12-22 | Kabushiki Kaisha Toshiba | Apparatus and method for reading multi-level data stored in a semiconductor memory |
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