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JPS5768062A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5768062A
JPS5768062A JP14393280A JP14393280A JPS5768062A JP S5768062 A JPS5768062 A JP S5768062A JP 14393280 A JP14393280 A JP 14393280A JP 14393280 A JP14393280 A JP 14393280A JP S5768062 A JPS5768062 A JP S5768062A
Authority
JP
Japan
Prior art keywords
type
influence
bias
voltage
variation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14393280A
Other languages
Japanese (ja)
Other versions
JPH0358182B2 (en
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14393280A priority Critical patent/JPS5768062A/en
Priority to US06/260,994 priority patent/US4460835A/en
Priority to DE8181103606T priority patent/DE3162416D1/en
Priority to EP81103606A priority patent/EP0039946B1/en
Priority to CA000377457A priority patent/CA1185665A/en
Publication of JPS5768062A publication Critical patent/JPS5768062A/en
Publication of JPH0358182B2 publication Critical patent/JPH0358182B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To strengthen a static memory or the like against the influence of variation in the power voltage or the like by forming an MOS inverter of an E/R type and applying different bias voltages in active mode and in standby mode. CONSTITUTION:An inverter circuit is composed of series connection of a driving E-type MOS T1 and a load resistor R, and of D-type or I-type MOS T31 operating ON or OFF with a CE signal between the resistor R and a VDD power source. The VBB voltage is supplied from a variable self-bias unit with the CE signal in such a manner that the bias is deeply provided at the standby time to completely break the T31 for low power consumption. A static type memory cell can be formed, for example, of inverters 21, 22 of this structure and transfer elements T15, T16 so as not to be affected by the influence of back bias voltage by employing the load elements with the resistors R11, R12. Further, it can be strengthened against the influence of variation in the temperature and alpha-ray.
JP14393280A 1980-05-13 1980-10-15 Semiconductor integrated circuit device Granted JPS5768062A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP14393280A JPS5768062A (en) 1980-10-15 1980-10-15 Semiconductor integrated circuit device
US06/260,994 US4460835A (en) 1980-05-13 1981-05-06 Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator
DE8181103606T DE3162416D1 (en) 1980-05-13 1981-05-11 Semiconductor integrated circuit device
EP81103606A EP0039946B1 (en) 1980-05-13 1981-05-11 Semiconductor integrated circuit device
CA000377457A CA1185665A (en) 1980-05-13 1981-05-13 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14393280A JPS5768062A (en) 1980-10-15 1980-10-15 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5768062A true JPS5768062A (en) 1982-04-26
JPH0358182B2 JPH0358182B2 (en) 1991-09-04

Family

ID=15350425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14393280A Granted JPS5768062A (en) 1980-05-13 1980-10-15 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5768062A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61208252A (en) * 1985-03-13 1986-09-16 Nec Corp Insulated gate type semiconductor integrated circuit device
JPH0817208B2 (en) * 1987-09-14 1996-02-21 モトローラ・インコーポレーテツド Trench cell for integrated circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160060A (en) * 1980-05-13 1981-12-09 Toshiba Corp Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160060A (en) * 1980-05-13 1981-12-09 Toshiba Corp Semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61208252A (en) * 1985-03-13 1986-09-16 Nec Corp Insulated gate type semiconductor integrated circuit device
JPH0817208B2 (en) * 1987-09-14 1996-02-21 モトローラ・インコーポレーテツド Trench cell for integrated circuit

Also Published As

Publication number Publication date
JPH0358182B2 (en) 1991-09-04

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