[go: up one dir, main page]

JPS5740923A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5740923A
JPS5740923A JP11591880A JP11591880A JPS5740923A JP S5740923 A JPS5740923 A JP S5740923A JP 11591880 A JP11591880 A JP 11591880A JP 11591880 A JP11591880 A JP 11591880A JP S5740923 A JPS5740923 A JP S5740923A
Authority
JP
Japan
Prior art keywords
type region
alloy
alloy foil
come
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11591880A
Other languages
Japanese (ja)
Inventor
Akinori Ogata
Masahiro Fujiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11591880A priority Critical patent/JPS5740923A/en
Publication of JPS5740923A publication Critical patent/JPS5740923A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743Apparatus for manufacturing layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/741Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/743Apparatus for manufacturing layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To abbreviate the manufacturing process of a semiconductor device and to form a uniform alloy later by a method wherein an alloy foil of Au-Si-Sb is made to come in contact with one main face of a substrate, and a brazed film is provided on the other main face at the temperature higher than the eutectic temperature of the alloy foil. CONSTITUTION:After P type region 2 is provided on the main face of the substrate 1, the alloy foil 10 of Au-Si-Sb is made to come in contact with an electrode setting region of the N type region. The alloy foil contains 11-17% of Si, 1-5% of Sb, and forms an eutectic. Then a buffer plate 6' is brazed to the P type region. Because the brazing temperature is 1,000 deg.C, the alloy foil of Au-Si-Sb being made to come in contact with the N type region can form together an alloy with the surface layer of the N type region. Accordingly the process can be abbreviated, and the uniform alloy layer can be formed.
JP11591880A 1980-08-25 1980-08-25 Manufacture of semiconductor device Pending JPS5740923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11591880A JPS5740923A (en) 1980-08-25 1980-08-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11591880A JPS5740923A (en) 1980-08-25 1980-08-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5740923A true JPS5740923A (en) 1982-03-06

Family

ID=14674427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11591880A Pending JPS5740923A (en) 1980-08-25 1980-08-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5740923A (en)

Similar Documents

Publication Publication Date Title
JPS5762539A (en) Mounting method for semiconductor element
JPS5637635A (en) Manufacture of semiconductor device
JPS5516464A (en) Method of forming wafer for semiconductor device
GB1477129A (en) Semiconductor elements
JPS5740923A (en) Manufacture of semiconductor device
JPS54113253A (en) Bonding method of semiconductor pellet
JPS55130134A (en) Bonding method of semiconductor pellet
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS57102032A (en) Manufacture of semiconductor element
JPS533066A (en) Electrode formation method
JPS5768022A (en) Manufacture of compound semiconductor device
JPS5648142A (en) Adherence of semiconductor pellet
JPS5691467A (en) Dhd sealed semiconductor
JPS57154829A (en) Forming method for electrode metal of semiconductor device
JPS5566113A (en) Manufacture of elastic surface wave device
JPS5515246A (en) Bonding method for semiconductor substrate
JPS5471562A (en) Semiconductor element
JPS56169326A (en) Manufacture of semiconductor device
JPS5512727A (en) Semiconductor wafer for diode or rectifier cell
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS5267971A (en) Manufacture of integrated circuit wafer
JPS5211765A (en) Method of manufacturing semiconductor device
JPS57141939A (en) Formation of solder bump
JPS5662348A (en) Semiconductor device and production thereof
JPS5633844A (en) Semiconductor device and manufacture therefor