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JPS5730358A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5730358A
JPS5730358A JP10473680A JP10473680A JPS5730358A JP S5730358 A JPS5730358 A JP S5730358A JP 10473680 A JP10473680 A JP 10473680A JP 10473680 A JP10473680 A JP 10473680A JP S5730358 A JPS5730358 A JP S5730358A
Authority
JP
Japan
Prior art keywords
film
insulating film
tantalum
substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10473680A
Other languages
Japanese (ja)
Inventor
Kanetake Takasaki
Yasuo Uoochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10473680A priority Critical patent/JPS5730358A/en
Publication of JPS5730358A publication Critical patent/JPS5730358A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To improve the characteristics of a semiconductor device by oxidizing with plasma a conductor metallic film formed on a substrate to form an insulating film and forming a capacitor with the film as a derivative. CONSTITUTION:Boron ions are injected on a P type silicon semiconductor substrate 1 to form a P<+> type channel cut region 2 and a field insulating film 3, a tantalum film 4 is formed over the entire surface of the substrate, an insulating film 5 made of oxidized tantalum is formed of the tantalum film by a plasma oxidation apparatus, a polycrystalline silicon layer 6 is formed on the film by a chemical vapor phase growing method, is then patterned by a photolithographic technique to form a capacitor section Cp, and thereafter a gate electrode 8, a source region 9 and a drain region 10, etc. are formed in the step of manufacturing an n-channal MIS field effect transistor. In this manner, it does not include moisture or molten liquid content, the characteristics of the device are not deteriorated.
JP10473680A 1980-07-30 1980-07-30 Manufacture of semiconductor device Pending JPS5730358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10473680A JPS5730358A (en) 1980-07-30 1980-07-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10473680A JPS5730358A (en) 1980-07-30 1980-07-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5730358A true JPS5730358A (en) 1982-02-18

Family

ID=14388774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10473680A Pending JPS5730358A (en) 1980-07-30 1980-07-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5730358A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60225464A (en) * 1984-04-24 1985-11-09 Hitachi Ltd Image sensor and manufacture thereof
JPS61196566A (en) * 1985-02-26 1986-08-30 Mitsubishi Electric Corp Semiconductor device
WO1992012537A1 (en) * 1991-01-01 1992-07-23 Tadahiro Ohmi Method for manufacturing memory cell of dram
WO1992012539A1 (en) * 1991-01-01 1992-07-23 Tadahiro Ohmi Semiconductor memory of dynamic type
DE102004046483A1 (en) * 2004-09-23 2006-04-06 Infineon Technologies Ag Laminated structure production for capacitor, involves fabricating two layers from same metallic conductive layer on dielectric layer, and converting material of one layer into dielectric material by chemical reaction of gaseous phase

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60225464A (en) * 1984-04-24 1985-11-09 Hitachi Ltd Image sensor and manufacture thereof
JPS61196566A (en) * 1985-02-26 1986-08-30 Mitsubishi Electric Corp Semiconductor device
WO1992012537A1 (en) * 1991-01-01 1992-07-23 Tadahiro Ohmi Method for manufacturing memory cell of dram
WO1992012539A1 (en) * 1991-01-01 1992-07-23 Tadahiro Ohmi Semiconductor memory of dynamic type
US5494840A (en) * 1991-01-01 1996-02-27 Ohmi; Tadahiro Method for manufacturing DRAM memory cells having a thin metal oxide film on a thin metal film
DE102004046483A1 (en) * 2004-09-23 2006-04-06 Infineon Technologies Ag Laminated structure production for capacitor, involves fabricating two layers from same metallic conductive layer on dielectric layer, and converting material of one layer into dielectric material by chemical reaction of gaseous phase

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