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JPS5513951A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS5513951A
JPS5513951A JP8729178A JP8729178A JPS5513951A JP S5513951 A JPS5513951 A JP S5513951A JP 8729178 A JP8729178 A JP 8729178A JP 8729178 A JP8729178 A JP 8729178A JP S5513951 A JPS5513951 A JP S5513951A
Authority
JP
Japan
Prior art keywords
film
sio
forming
untioxidation
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8729178A
Other languages
Japanese (ja)
Inventor
Shinichi Inoue
Nobuo Toyokura
Masaru Shiraki
Hajime Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8729178A priority Critical patent/JPS5513951A/en
Publication of JPS5513951A publication Critical patent/JPS5513951A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To prevent deterioration of withstand voltage due to a Si3N4 film by forming an untioxidation film on a SiO2 film by heat treating the SiO2 film in a deoxidizing atmosphere that contains CO, prior to a selective oxidation of the SiO2 film on which the Si3N4 film is laid.
CONSTITUTION: A laminate consisting of a SiO2 film 22 and a Si3N4 film 23, is formed on a Si substrate 21, and is heat treated, thus forming a thick field SiO2 film 24 at the both ends of the laminate. Then the both films 22 and 23 are removed, and there, a thin gate SiO2 film 25 is formed before forming an electrode 26, that is made of Mo for instance, on the film 25. With the above construction used as a mask, source - drain regions 27 and 28 are formed in the substrate 21 by means of diffusion process. Then the entire surface is covered by a SiO2 film 29, and openings are made to where source - drain electrodes 30 and 31 are installed. With this constitution, the film 22 that is the base for the film 23, is preheated in a deoxidizing atmosphere containing H2 or CO to form an untioxidation film, thus increasing insulation capability as much as ten times.
COPYRIGHT: (C)1980,JPO&Japio
JP8729178A 1978-07-18 1978-07-18 Manufacturing method of semiconductor device Pending JPS5513951A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8729178A JPS5513951A (en) 1978-07-18 1978-07-18 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8729178A JPS5513951A (en) 1978-07-18 1978-07-18 Manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5513951A true JPS5513951A (en) 1980-01-31

Family

ID=13910694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8729178A Pending JPS5513951A (en) 1978-07-18 1978-07-18 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5513951A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07321061A (en) * 1994-10-03 1995-12-08 Sony Corp Manufacture of semiconductor device
JP5462885B2 (en) * 2009-12-18 2014-04-02 株式会社日立国際電気 Semiconductor device manufacturing method and substrate processing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07321061A (en) * 1994-10-03 1995-12-08 Sony Corp Manufacture of semiconductor device
JP5462885B2 (en) * 2009-12-18 2014-04-02 株式会社日立国際電気 Semiconductor device manufacturing method and substrate processing apparatus

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