JPS5727126A - Vapor growth device for compound semiconductor - Google Patents
Vapor growth device for compound semiconductorInfo
- Publication number
- JPS5727126A JPS5727126A JP10135980A JP10135980A JPS5727126A JP S5727126 A JPS5727126 A JP S5727126A JP 10135980 A JP10135980 A JP 10135980A JP 10135980 A JP10135980 A JP 10135980A JP S5727126 A JPS5727126 A JP S5727126A
- Authority
- JP
- Japan
- Prior art keywords
- vapor growth
- chamber
- substrate
- inp
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 150000001875 compounds Chemical class 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 238000005192 partition Methods 0.000 abstract 2
- 229910005267 GaCl3 Inorganic materials 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 1
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE: To provide a vapor growth device for compound semiconductors which provide composition changes between different composition layers by providing an opening part to a partition plate dividing a vapor growth reaction chamber to two or more parts, rotating a substrate support means supporting rotary type semiconductor substrates connected to the revolving shaft in the opening part, and causing vapor growth alternately in the respective reaction chambers.
CONSTITUTION: A vapor growth reaction chamber is divided to reaction chambers 3, 4 by a partition plate 5, and for example, an InP substrate 6 is fixed to a support means 8 by way of an operating rod 7. First, InCl3, and PH3 are carried from the upper stream side of the chamber 3 to a crystal deposition area A, where vapor growth of InP is accomplished on the substrate 6. Next, InCl3, GaCl3, PH3 and AsH3 are carried by hydrogen to the crystal deposition area A of the chamber 4; at the same time, the rod 7 is operated on the outside of a reaction tube 2 to move the substrate 6 grown with the InP layer into the chamber 4, where vapor growth of InGaAsP is accomplished.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10135980A JPS5727126A (en) | 1980-07-25 | 1980-07-25 | Vapor growth device for compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10135980A JPS5727126A (en) | 1980-07-25 | 1980-07-25 | Vapor growth device for compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5727126A true JPS5727126A (en) | 1982-02-13 |
Family
ID=14298632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10135980A Pending JPS5727126A (en) | 1980-07-25 | 1980-07-25 | Vapor growth device for compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5727126A (en) |
-
1980
- 1980-07-25 JP JP10135980A patent/JPS5727126A/en active Pending
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