JPS5726702A - Method and device for measuring film thickness - Google Patents
Method and device for measuring film thicknessInfo
- Publication number
- JPS5726702A JPS5726702A JP10212780A JP10212780A JPS5726702A JP S5726702 A JPS5726702 A JP S5726702A JP 10212780 A JP10212780 A JP 10212780A JP 10212780 A JP10212780 A JP 10212780A JP S5726702 A JPS5726702 A JP S5726702A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- film thickness
- measured
- treated
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052724 xenon Inorganic materials 0.000 abstract 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
PURPOSE:To measure <=50Angstrom film thickness with <=+ or -0.5-+ or -2Angstrom high precision by removing an adsorbed layer adsorbed to a surface to be measured and by using an ellipsometer for a <=5,000Angstrom wavelength light source. CONSTITUTION:A sample to be measured is heated under vacuum or treated with plasma to remove an adsorbed layer on the surface, and while a light source having <=5,000Angstrom is used, the film thickness is measured by an ellipsometer. For example, the sample 1 to be measured is fitted under a sample table in a sample container 2 which can be evacuated and the sample is heated by a xenon lamp 8 or treated with plasma generated by applying a high voltage between electrodes 13 and 14 to remove the surface-treated layer, and the sample 1 is irradiated with Ar laser light from the light source 3 through a polarizer 4 and a compensator 5, thereby converting its reflected light into an electric signal by a photodetector 7 through an analyzer 6. In this case, the film thickness, refractivity, etc., are found with high precision from variations of ellipticity of the polarized wave of the light.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10212780A JPS5726702A (en) | 1980-07-25 | 1980-07-25 | Method and device for measuring film thickness |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10212780A JPS5726702A (en) | 1980-07-25 | 1980-07-25 | Method and device for measuring film thickness |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5726702A true JPS5726702A (en) | 1982-02-12 |
Family
ID=14319111
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10212780A Pending JPS5726702A (en) | 1980-07-25 | 1980-07-25 | Method and device for measuring film thickness |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5726702A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6423105A (en) * | 1987-07-17 | 1989-01-25 | Japan Aviation Electron | Film thickness evaluating device |
WO1998033077A3 (en) * | 1997-01-27 | 1998-09-11 | Peter D Haaland | Coatings, methods and apparatus for reducing reflection from optical substrates |
-
1980
- 1980-07-25 JP JP10212780A patent/JPS5726702A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6423105A (en) * | 1987-07-17 | 1989-01-25 | Japan Aviation Electron | Film thickness evaluating device |
WO1998033077A3 (en) * | 1997-01-27 | 1998-09-11 | Peter D Haaland | Coatings, methods and apparatus for reducing reflection from optical substrates |
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