JPS572567A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS572567A JPS572567A JP7644880A JP7644880A JPS572567A JP S572567 A JPS572567 A JP S572567A JP 7644880 A JP7644880 A JP 7644880A JP 7644880 A JP7644880 A JP 7644880A JP S572567 A JPS572567 A JP S572567A
- Authority
- JP
- Japan
- Prior art keywords
- region
- polycrystalline silicon
- semiconductor device
- electrode
- base region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To improve the reliability of a semiconductor device by forming an equipotential electrode with polycrystalline silicon, thereby preventing the increase in the surface leakage current caused by corrosion and improper shortcircuit. CONSTITUTION:A reversely conductive type base region 12 is formed on a semiconductor substrate, and an emitter region 11 is formed in a base region 12. A contacting regin 14 is formed at an interval around the base region 12, and equipotential electrode 19 of the same conductive type polycrystalline silicon connected to the region 14 is formed. Emitter, base and collector electrodes 16, 17, 18 are formed of aluminum or gold. When the equipotential electrode 19 of polycrystalline silicon is thus formed, the electrode will not corrode even when a bias is applied at a high temperature and a high moisture, the increase in the surface leakage current and the improper shortcircuit can be suppressed, and the reliability of the silicon junction type semiconductor device can be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7644880A JPS572567A (en) | 1980-06-06 | 1980-06-06 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7644880A JPS572567A (en) | 1980-06-06 | 1980-06-06 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS572567A true JPS572567A (en) | 1982-01-07 |
Family
ID=13605430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7644880A Pending JPS572567A (en) | 1980-06-06 | 1980-06-06 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS572567A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6064481A (en) * | 1983-09-19 | 1985-04-13 | Hitachi Ltd | Semiconductor device |
| DE4203399A1 (en) * | 1991-02-08 | 1992-08-13 | Toyoda Automatic Loom Works | SEMICONDUCTOR MODULE AND METHOD FOR THE PRODUCTION THEREOF |
| CN105572449A (en) * | 2015-12-09 | 2016-05-11 | 中国电子科技集团公司第四十一研究所 | Integrated circuit for suppressing high impedance input end current leakage |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5079278A (en) * | 1973-11-09 | 1975-06-27 | ||
| JPS5129879A (en) * | 1974-09-06 | 1976-03-13 | Hitachi Ltd | HANDOTAISOCHINOSEIZOHOHO |
-
1980
- 1980-06-06 JP JP7644880A patent/JPS572567A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5079278A (en) * | 1973-11-09 | 1975-06-27 | ||
| JPS5129879A (en) * | 1974-09-06 | 1976-03-13 | Hitachi Ltd | HANDOTAISOCHINOSEIZOHOHO |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6064481A (en) * | 1983-09-19 | 1985-04-13 | Hitachi Ltd | Semiconductor device |
| JPH0516196B2 (en) * | 1983-09-19 | 1993-03-03 | Hitachi Ltd | |
| DE4203399A1 (en) * | 1991-02-08 | 1992-08-13 | Toyoda Automatic Loom Works | SEMICONDUCTOR MODULE AND METHOD FOR THE PRODUCTION THEREOF |
| DE4203399C2 (en) * | 1991-02-08 | 1996-07-18 | Toyoda Automatic Loom Works | Semiconductor device and method for its production |
| CN105572449A (en) * | 2015-12-09 | 2016-05-11 | 中国电子科技集团公司第四十一研究所 | Integrated circuit for suppressing high impedance input end current leakage |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1304728A (en) | ||
| GB890841A (en) | Semi-conductor device | |
| GB1032599A (en) | Junction transistor structure | |
| GB935710A (en) | Improvements in controlled semiconductor rectifiers | |
| JPS57208177A (en) | Semiconductor negative resistance element | |
| JPS572567A (en) | Semiconductor device | |
| JPS55150271A (en) | Semiconductor device | |
| GB1531542A (en) | Semiconductor device | |
| US2980831A (en) | Means for reducing surface recombination | |
| JPS55105367A (en) | Semiconductor device | |
| GB870599A (en) | Improvements in or relating to semi-conductor crystal rectifiers and methods of manufacture thereof | |
| JPS57206072A (en) | Semiconductor device | |
| JPS55157240A (en) | Semiconductor device | |
| JPS5481087A (en) | Seiconductor integrated circuit | |
| JPS55148422A (en) | Manufacturing of semiconductor device | |
| JPS5756969A (en) | High withstand voltage type semiconductor device | |
| EP0409370A3 (en) | Bipolar transistor | |
| JPS551158A (en) | Semiconductor device | |
| JPS55154760A (en) | Semiconductor device | |
| JPS566464A (en) | Semiconductor device and manufacture thereof | |
| JPS56101779A (en) | Schottky barrier diode | |
| JPS574157A (en) | Semiconductor device | |
| JPS57180138A (en) | Semiconductor device | |
| GB1281380A (en) | Semiconductor devices | |
| JPS5269585A (en) | Semiconductor device |