JPS57208160A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57208160A JPS57208160A JP9474481A JP9474481A JPS57208160A JP S57208160 A JPS57208160 A JP S57208160A JP 9474481 A JP9474481 A JP 9474481A JP 9474481 A JP9474481 A JP 9474481A JP S57208160 A JPS57208160 A JP S57208160A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- approx
- thickness
- wiring layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000006073 displacement reaction Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE:To largely reduce the area of an electrode section to be connected by arranging a conductive layer having etching speed different to the same etchant from upper and lower wiring layers on the surface of connecting part of the upper and lower wiring layers. CONSTITUTION:A wiring layer of the first layer made of an aluminum film 10 having approx. 1mum of thickness and its connecting electrode are formed on an SiO2 film 2 formed on a semiconductor substrate 1. Then, a wiring layer of the second layer and its connecting electrode are composed through an SiO2 film 4 formed by a CVD method of a Ti-W film 11 having approx. 1,000Angstrom as a lower layer and an aluminum film 12 having approx. 1.2mum of thickness as an upper layer. By employing a procedure described as such, in the case of patterning and ethcing the Al layer 12 of the second layer, even if there exist a positional displacement to some extent, the Ti-W film 11 prevents the Al film 10 of the first layer from being etched.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9474481A JPS57208160A (en) | 1981-06-18 | 1981-06-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9474481A JPS57208160A (en) | 1981-06-18 | 1981-06-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57208160A true JPS57208160A (en) | 1982-12-21 |
Family
ID=14118628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9474481A Pending JPS57208160A (en) | 1981-06-18 | 1981-06-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57208160A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63278255A (en) * | 1987-04-30 | 1988-11-15 | Yokogawa Hewlett Packard Ltd | Interlayer connection for integrated circuit |
| US4965226A (en) * | 1987-10-16 | 1990-10-23 | U.S. Philips Corporation | Method of forming an interconnection between conductive levels |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52149990A (en) * | 1976-06-09 | 1977-12-13 | Hitachi Ltd | Production of multilayer wirings |
| JPS5365088A (en) * | 1976-11-22 | 1978-06-10 | Nec Corp | Semiconductor device |
| JPS5640260A (en) * | 1979-09-11 | 1981-04-16 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1981
- 1981-06-18 JP JP9474481A patent/JPS57208160A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52149990A (en) * | 1976-06-09 | 1977-12-13 | Hitachi Ltd | Production of multilayer wirings |
| JPS5365088A (en) * | 1976-11-22 | 1978-06-10 | Nec Corp | Semiconductor device |
| JPS5640260A (en) * | 1979-09-11 | 1981-04-16 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63278255A (en) * | 1987-04-30 | 1988-11-15 | Yokogawa Hewlett Packard Ltd | Interlayer connection for integrated circuit |
| US4965226A (en) * | 1987-10-16 | 1990-10-23 | U.S. Philips Corporation | Method of forming an interconnection between conductive levels |
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