JPS57203321A - Digital-to-analog converter - Google Patents
Digital-to-analog converterInfo
- Publication number
- JPS57203321A JPS57203321A JP8905081A JP8905081A JPS57203321A JP S57203321 A JPS57203321 A JP S57203321A JP 8905081 A JP8905081 A JP 8905081A JP 8905081 A JP8905081 A JP 8905081A JP S57203321 A JPS57203321 A JP S57203321A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- thin film
- film
- sio2
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/66—Digital/analogue converters
- H03M1/74—Simultaneous conversion
- H03M1/80—Simultaneous conversion using weighted impedances
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
- Analogue/Digital Conversion (AREA)
Abstract
PURPOSE:To realize a monolithic D/A converter having high accuracy, by covering a semiconductor circuit and a thin film circuit with an SiO2 passivation film formed by a sputtering process and protecting these circuits. CONSTITUTION:A semiconductor element 3 such as a reference voltage source circuit, a current switch circuit, etc. is formed within an Si substrate 2, and an SiO2 film 4 is formed on the element 3 by heat oxidation and CVD processes. A thin film resistance element 5 of NiCr alloy is formed on the film 4 in order to obtain a thin film circuit like a weight resistance network circuit, etc. corresponding to the weighting of each bit current. An SiO2 passivation film 9 formed by the sputtering process covers over the semiconductor circuit and the thin film circuit for protection. Thus the protecting effect is increased for the circuits, and a monolithic D/A converter having high accuracy is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8905081A JPS57203321A (en) | 1981-06-10 | 1981-06-10 | Digital-to-analog converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8905081A JPS57203321A (en) | 1981-06-10 | 1981-06-10 | Digital-to-analog converter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57203321A true JPS57203321A (en) | 1982-12-13 |
Family
ID=13960044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8905081A Pending JPS57203321A (en) | 1981-06-10 | 1981-06-10 | Digital-to-analog converter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57203321A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63227043A (en) * | 1987-03-17 | 1988-09-21 | Matsushita Electronics Corp | Manufacturing method of thin film resistor circuit |
US5883765A (en) * | 1994-03-07 | 1999-03-16 | Commissariat A L'energie Atomique | Vertical magnetic head having first and second magnetic materials in specific shapes |
-
1981
- 1981-06-10 JP JP8905081A patent/JPS57203321A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63227043A (en) * | 1987-03-17 | 1988-09-21 | Matsushita Electronics Corp | Manufacturing method of thin film resistor circuit |
US5883765A (en) * | 1994-03-07 | 1999-03-16 | Commissariat A L'energie Atomique | Vertical magnetic head having first and second magnetic materials in specific shapes |
US6167611B1 (en) | 1994-03-07 | 2001-01-02 | Commissariat A L'energie Atomique | Process for producing a vertical magnetic head |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4104607A (en) | Zero temperature coefficient of resistance bi-film resistor | |
JPS57203321A (en) | Digital-to-analog converter | |
JPS5312281A (en) | Semiconductor control rectifying element | |
JPS5650533A (en) | Semiconductor device | |
JPS57184255A (en) | Solar cell | |
JPS5726456A (en) | Semiconductor device | |
JPS57106084A (en) | Amorphous silicon diode | |
JPS5721862A (en) | Bidirectional thyristor | |
JPS56124191A (en) | Magnetic bubble element | |
JPS5492274A (en) | Thermal head | |
JPS5553452A (en) | Semiconductor device | |
JPS5481086A (en) | Semiconductor integrated circuit | |
JPS56110267A (en) | Semiconductor device | |
JPS5492271A (en) | Thermal head | |
JPS55111184A (en) | Reluctance unit and manufacturing method thereof | |
JPS5561056A (en) | High resistance structure of integrated circuit | |
JPS53148281A (en) | Semiconductor device | |
JPS5368970A (en) | Solder electrode structure | |
JPS5361348A (en) | Thermal element for typing | |
JPS5793530A (en) | Semiconductor device | |
JPS5245270A (en) | Semiconductor device | |
JPS5720373A (en) | Heat-sensitive recording head and production thereof | |
JPS56166628A (en) | Digital-to-analog converter | |
JPS53110370A (en) | Semiconductor device | |
JPS53105989A (en) | Semiconductor device |