JPS57201058A - Insulated semiconductor device - Google Patents
Insulated semiconductor deviceInfo
- Publication number
- JPS57201058A JPS57201058A JP56085741A JP8574181A JPS57201058A JP S57201058 A JPS57201058 A JP S57201058A JP 56085741 A JP56085741 A JP 56085741A JP 8574181 A JP8574181 A JP 8574181A JP S57201058 A JPS57201058 A JP S57201058A
- Authority
- JP
- Japan
- Prior art keywords
- metal plate
- semiconductor
- plate
- semiconductor device
- reliability
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
- Die Bonding (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56085741A JPS6038867B2 (ja) | 1981-06-05 | 1981-06-05 | 絶縁型半導体装置 |
DE19823221199 DE3221199A1 (de) | 1981-06-05 | 1982-06-04 | Halbleiteranordnung des isolierten typs |
US06/386,071 US4556899A (en) | 1981-06-05 | 1982-06-07 | Insulated type semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56085741A JPS6038867B2 (ja) | 1981-06-05 | 1981-06-05 | 絶縁型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57201058A true JPS57201058A (en) | 1982-12-09 |
JPS6038867B2 JPS6038867B2 (ja) | 1985-09-03 |
Family
ID=13867264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56085741A Expired JPS6038867B2 (ja) | 1981-06-05 | 1981-06-05 | 絶縁型半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US4556899A (ja) |
JP (1) | JPS6038867B2 (ja) |
DE (1) | DE3221199A1 (ja) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5921032A (ja) * | 1982-07-26 | 1984-02-02 | Sumitomo Electric Ind Ltd | 半導体装置用基板 |
DE3469827D1 (en) * | 1983-08-23 | 1988-04-14 | Bbc Brown Boveri & Cie | Ceramic-metallic element |
JPS6066843A (ja) * | 1983-09-22 | 1985-04-17 | Hitachi Ltd | 集積回路パツケ−ジ |
JPS60239051A (ja) * | 1984-05-11 | 1985-11-27 | Mitsubishi Electric Corp | 半導体装置 |
US4716124A (en) * | 1984-06-04 | 1987-12-29 | General Electric Company | Tape automated manufacture of power semiconductor devices |
US4635092A (en) * | 1984-06-04 | 1987-01-06 | General Electric Company | Tape automated manufacture of power semiconductor devices |
EP0181975B1 (en) * | 1984-11-15 | 1989-03-29 | Fuji Electric Co., Ltd. | Semiconductor device comprising a support body |
DE3501372A1 (de) * | 1985-01-17 | 1986-07-17 | Brown, Boveri & Cie Ag, 6800 Mannheim | Substrat fuer leiterplatten |
DE3522703A1 (de) * | 1985-06-25 | 1987-01-08 | Leitron Leiterplatten | Leiterplatte mit keramischen chip-traeger-material |
DE3604075A1 (de) * | 1986-02-08 | 1987-08-13 | Bosch Gmbh Robert | Verpackung von leistungsbauelementen |
US4858073A (en) * | 1986-12-10 | 1989-08-15 | Akzo America Inc. | Metal substrated printed circuit |
DE3722119A1 (de) * | 1987-07-03 | 1989-01-12 | Siemens Ag | Schaltungsmodul mit einem plattenfoermigen schaltungstraeger aus glas oder keramik |
EP0322434B1 (de) * | 1987-07-03 | 1993-10-20 | DODUCO GMBH + Co Dr. Eugen DÀ¼rrwächter | Flacher körper, insbesondere zur verwendung als wärmesenke für elektronische leistungsbauelemente |
DE3731624A1 (de) * | 1987-09-19 | 1989-03-30 | Asea Brown Boveri | Ausgleichsronde fuer leistungshalbleitermodule |
US5194934A (en) * | 1988-07-27 | 1993-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Mounting structure for a semiconductor chip having a buffer layer |
DE3930858C2 (de) * | 1988-09-20 | 2002-01-03 | Peter H Maier | Modulaufbau |
DE3837618A1 (de) * | 1988-11-05 | 1990-05-10 | Semikron Elektronik Gmbh | Elektrische oder elektronische anordnung |
DE3837617A1 (de) * | 1988-11-05 | 1990-05-10 | Semikron Elektronik Gmbh | Traegerkoerper zur elektrisch isolierten anordnung von bauteilen |
DE3837920A1 (de) * | 1988-11-09 | 1990-05-10 | Semikron Elektronik Gmbh | Halbleiterelement |
DE3931634A1 (de) * | 1989-09-22 | 1991-04-04 | Telefunken Electronic Gmbh | Halbleiterbauelement |
US4965710A (en) * | 1989-11-16 | 1990-10-23 | International Rectifier Corporation | Insulated gate bipolar transistor power module |
US5300809A (en) * | 1989-12-12 | 1994-04-05 | Sumitomo Special Metals Co., Ltd. | Heat-conductive composite material |
EP0434264B1 (en) * | 1989-12-22 | 1994-10-12 | Westinghouse Electric Corporation | Package for power semiconductor components |
US5109268A (en) * | 1989-12-29 | 1992-04-28 | Sgs-Thomson Microelectronics, Inc. | Rf transistor package and mounting pad |
DE4017181C2 (de) * | 1990-05-29 | 1998-08-27 | Daimler Benz Aerospace Ag | Elektrisches Bauelement |
JP2777464B2 (ja) * | 1990-07-18 | 1998-07-16 | 株式会社日立製作所 | 電子装置と、これを用いたエンジンの点火装置 |
JP2505065B2 (ja) * | 1990-10-04 | 1996-06-05 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
DE4208604A1 (de) * | 1991-11-29 | 1993-06-03 | Schulz Harder Juergen | Verbundmaterial zur verwendung als traeger elektrischer schaltkreise sowie unter verwendung des verbundmaterials hergestellter elektrischer schaltkreis |
JP2838625B2 (ja) * | 1992-09-08 | 1998-12-16 | 株式会社日立製作所 | 半導体モジュール |
FR2697125B1 (fr) * | 1992-10-20 | 1994-12-09 | Thomson Csf | Procédé de montage d'une microstructure et microstructure montée selon le procédé. |
JPH0794633A (ja) * | 1993-09-24 | 1995-04-07 | Ngk Spark Plug Co Ltd | 金属部材を接合したセラミック基板 |
US5614763A (en) * | 1995-03-13 | 1997-03-25 | Zetetic Institute | Methods for improving performance and temperature robustness of optical coupling between solid state light sensors and optical systems |
SE512366C2 (sv) * | 1998-07-07 | 2000-03-06 | Ericsson Telefon Ab L M | Anordning och metod för montering på mönsterkort för elektronik |
DE10062108B4 (de) * | 2000-12-13 | 2010-04-15 | Infineon Technologies Ag | Leistungsmodul mit verbessertem transienten Wärmewiderstand |
DE10126508B4 (de) * | 2001-05-30 | 2008-11-13 | Infineon Technologies Ag | Vorrichtung mit mittels Spritzgusstechnik verpackten elektronischen Bauteilen, Spritzgusswerkzeug und Verfahren zum Verpacken von elektronischen Bauteilen |
US6922272B1 (en) * | 2003-02-14 | 2005-07-26 | Silicon Light Machines Corporation | Method and apparatus for leveling thermal stress variations in multi-layer MEMS devices |
DE102008005747A1 (de) * | 2008-01-24 | 2009-07-30 | Bayerische Motoren Werke Aktiengesellschaft | Leistungselektronikmodul |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1121226B (de) * | 1960-06-23 | 1962-01-04 | Siemens Ag | Halbleiteranordnung |
US3248681A (en) * | 1962-03-30 | 1966-04-26 | Westinghouse Electric Corp | Contacts for semiconductor devices |
US3311798A (en) * | 1963-09-27 | 1967-03-28 | Trw Semiconductors Inc | Component package |
US3469148A (en) * | 1967-11-08 | 1969-09-23 | Gen Motors Corp | Protectively covered hybrid microcircuits |
US3597658A (en) * | 1969-11-26 | 1971-08-03 | Rca Corp | High current semiconductor device employing a zinc-coated aluminum substrate |
US3829598A (en) * | 1972-09-25 | 1974-08-13 | Hutson Ind Inc | Copper heat sinks for electronic devices and method of making same |
US4057825A (en) * | 1975-07-18 | 1977-11-08 | Hitachi, Ltd. | Semiconductor device with composite metal heat-radiating plate onto which semiconductor element is soldered |
US4025997A (en) * | 1975-12-23 | 1977-05-31 | International Telephone & Telegraph Corporation | Ceramic mounting and heat sink device |
JPS5389664A (en) * | 1977-01-19 | 1978-08-07 | Hitachi Ltd | Package structure of semiconductor device |
JPS5471572A (en) * | 1977-11-18 | 1979-06-08 | Fujitsu Ltd | Semiconductor device |
US4227036A (en) * | 1978-09-18 | 1980-10-07 | Microwave Semiconductor Corp. | Composite flanged ceramic package for electronic devices |
JPS5568661A (en) * | 1978-11-17 | 1980-05-23 | Hitachi Ltd | Structure for mounting power transistor |
DE2853951A1 (de) * | 1978-12-14 | 1980-07-03 | Demetron | Kontaktplatte fuer halbleiter-bauelemente |
US4278990A (en) * | 1979-03-19 | 1981-07-14 | General Electric Company | Low thermal resistance, low stress semiconductor package |
-
1981
- 1981-06-05 JP JP56085741A patent/JPS6038867B2/ja not_active Expired
-
1982
- 1982-06-04 DE DE19823221199 patent/DE3221199A1/de active Granted
- 1982-06-07 US US06/386,071 patent/US4556899A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4556899A (en) | 1985-12-03 |
JPS6038867B2 (ja) | 1985-09-03 |
DE3221199C2 (ja) | 1988-03-31 |
DE3221199A1 (de) | 1983-01-27 |
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