JPS57193063A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57193063A JPS57193063A JP56077651A JP7765181A JPS57193063A JP S57193063 A JPS57193063 A JP S57193063A JP 56077651 A JP56077651 A JP 56077651A JP 7765181 A JP7765181 A JP 7765181A JP S57193063 A JPS57193063 A JP S57193063A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- gate electrode
- electrode
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Abstract
PURPOSE:To stabilize a threshold voltage in an MOSFET having a gate electrode made of high melting point metal such as Mo, W or the like by reducing the trap of hot carrier in the gate electrode by reducing the region in which the gate end and the dain end are superposed. CONSTITUTION:A thick field oxidized film 2 is formed at the periphery of a P type Si substrate 1, a thin gate oxidized film 3 is covered on the substrate 1 surrounded by the film 2, a high melting point metal such as Mo, W or the like is deposited on the overall surface including the film 3, a mask is covered, a reactive plasma etching is performed with CF4 including 5% O2, thereby forming a gate electrode 4. Subsequently, a polycrystalline Si layer 5 is grown on the overall surface, P<+> or As<+> ions are implanted through the layer 5 from the end of the electrode 4 by isolating at 1,000-2,000Angstrom , is heat treated at 900-1,100 deg.C in an atmosphere containing O2 to form N type source and drain regions 6, 7, an MoSi2 layer 4' is produced on the exposed part of the electrode 4, and a layer 5 is altered simultaneously to the SiO2 film 5'.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56077651A JPS57193063A (en) | 1981-05-22 | 1981-05-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56077651A JPS57193063A (en) | 1981-05-22 | 1981-05-22 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57193063A true JPS57193063A (en) | 1982-11-27 |
| JPH0217930B2 JPH0217930B2 (en) | 1990-04-24 |
Family
ID=13639789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56077651A Granted JPS57193063A (en) | 1981-05-22 | 1981-05-22 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57193063A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010059735A (en) * | 1999-12-30 | 2001-07-06 | 박종섭 | Mehtod of forming MOS transistor with metal gate electrode |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0434827U (en) * | 1990-07-16 | 1992-03-24 |
-
1981
- 1981-05-22 JP JP56077651A patent/JPS57193063A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010059735A (en) * | 1999-12-30 | 2001-07-06 | 박종섭 | Mehtod of forming MOS transistor with metal gate electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0217930B2 (en) | 1990-04-24 |
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