JPS57193031A - Manufacture of mask substrate for exposing x-ray - Google Patents
Manufacture of mask substrate for exposing x-rayInfo
- Publication number
- JPS57193031A JPS57193031A JP7774981A JP7774981A JPS57193031A JP S57193031 A JPS57193031 A JP S57193031A JP 7774981 A JP7774981 A JP 7774981A JP 7774981 A JP7774981 A JP 7774981A JP S57193031 A JPS57193031 A JP S57193031A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- mask
- thin
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000004642 Polyimide Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To obtain a mask substrate accurately with a wide area by superposing a thin organic film, a thin conductive film and a thin inorganic film which pass an X-ray on a substrate, etching them with reactive ions, electrically plating on the thin conductive film with the thin inorganic mask thus obtained, and selectively removing the substrate from the back surface. CONSTITUTION:This films of a Ti 22, a polyimide 23, an Au 24, a Ti 25 and a polysilicon 26 are laminated on an Si substrate 21, and a resist mask 27 is formed. The film 26 is etched with reactive ions with CF4+H2, and holes are vertically formed with the film 25 as a stoper. The Ti film 25 is removed with diluted HF, and an Au 28 is electrically plated. Subsequently, the resist 27 is removed, and the central part of the substrate 21 is removed to complete it. According to this structure, a mask pattern of X-ray absorbing member of rectangular section can be readily and accurately formed, and a high dimensional stability can be maintained over a wide area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7774981A JPS57193031A (en) | 1981-05-22 | 1981-05-22 | Manufacture of mask substrate for exposing x-ray |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7774981A JPS57193031A (en) | 1981-05-22 | 1981-05-22 | Manufacture of mask substrate for exposing x-ray |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57193031A true JPS57193031A (en) | 1982-11-27 |
Family
ID=13642560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7774981A Pending JPS57193031A (en) | 1981-05-22 | 1981-05-22 | Manufacture of mask substrate for exposing x-ray |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57193031A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6113621A (en) * | 1984-06-28 | 1986-01-21 | Hitachi Ltd | Pattern formation method |
| JPS63166226A (en) * | 1986-12-27 | 1988-07-09 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of x-ray exposure mask |
| JPS63299124A (en) * | 1987-05-29 | 1988-12-06 | Hitachi Ltd | X-ray exposure mask |
| JPH02309A (en) * | 1987-12-29 | 1990-01-05 | Canon Inc | Mask for x-ray and light exposing method using it |
| US4939052A (en) * | 1986-02-03 | 1990-07-03 | Fujitsu Limited | X-ray exposure mask |
| JPH02296244A (en) * | 1989-04-20 | 1990-12-06 | Samsung Electron Co Ltd | x-ray mask |
-
1981
- 1981-05-22 JP JP7774981A patent/JPS57193031A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6113621A (en) * | 1984-06-28 | 1986-01-21 | Hitachi Ltd | Pattern formation method |
| US4939052A (en) * | 1986-02-03 | 1990-07-03 | Fujitsu Limited | X-ray exposure mask |
| JPS63166226A (en) * | 1986-12-27 | 1988-07-09 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of x-ray exposure mask |
| JPS63299124A (en) * | 1987-05-29 | 1988-12-06 | Hitachi Ltd | X-ray exposure mask |
| JPH02309A (en) * | 1987-12-29 | 1990-01-05 | Canon Inc | Mask for x-ray and light exposing method using it |
| JPH02296244A (en) * | 1989-04-20 | 1990-12-06 | Samsung Electron Co Ltd | x-ray mask |
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