JPS57190379A - Sputter target of dielectric component - Google Patents
Sputter target of dielectric componentInfo
- Publication number
- JPS57190379A JPS57190379A JP56076248A JP7624881A JPS57190379A JP S57190379 A JPS57190379 A JP S57190379A JP 56076248 A JP56076248 A JP 56076248A JP 7624881 A JP7624881 A JP 7624881A JP S57190379 A JPS57190379 A JP S57190379A
- Authority
- JP
- Japan
- Prior art keywords
- target
- stay
- substrate
- plate
- cooling plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To reduce the surface temperature of the target preventing the target from being damaged by a method wherein the dielectric components supported by a plate supporter with high thermal conductivity are adopted as the sputter target for producing the unimorph or bimorph and the coefficiency of thermal expansion of said components are made similar to each other. CONSTITUTION:The magnet 15 is provided on the vacuum tank 1 and the target 7 is mounted on the bottom of the magnet 15 through the intermediary of the target cooling plate 6 and fixed by the target stay 8. Next the electrode 9 for masking and the shutter 10 are provided under said stay 8 and the cooling plate 14 is further provided facing to said target and the substrate 11 is mounted on said cooling plate 14 through the intermediary of the heat radiating plate 13 and fixed by the substrate stay 12. The content evaporated from the target is accumulated on the substrate 11 is this device wherein the target 7 comprises the non-magnetic plate supporter 22 and titanic acid lead zirconate 21 with almost the same coefficient of the thermal expansion of each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56076248A JPS57190379A (en) | 1981-05-19 | 1981-05-19 | Sputter target of dielectric component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56076248A JPS57190379A (en) | 1981-05-19 | 1981-05-19 | Sputter target of dielectric component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57190379A true JPS57190379A (en) | 1982-11-22 |
Family
ID=13599883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56076248A Pending JPS57190379A (en) | 1981-05-19 | 1981-05-19 | Sputter target of dielectric component |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57190379A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100645038B1 (en) * | 2000-05-25 | 2006-11-13 | 삼성전자주식회사 | Sputtering device maximizes board effective area |
-
1981
- 1981-05-19 JP JP56076248A patent/JPS57190379A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100645038B1 (en) * | 2000-05-25 | 2006-11-13 | 삼성전자주식회사 | Sputtering device maximizes board effective area |
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