JPS57172766A - Charge transfer device - Google Patents
Charge transfer deviceInfo
- Publication number
- JPS57172766A JPS57172766A JP56058262A JP5826281A JPS57172766A JP S57172766 A JPS57172766 A JP S57172766A JP 56058262 A JP56058262 A JP 56058262A JP 5826281 A JP5826281 A JP 5826281A JP S57172766 A JPS57172766 A JP S57172766A
- Authority
- JP
- Japan
- Prior art keywords
- charge transfer
- transfer part
- diffused layer
- depression type
- low voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/454—Output structures
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To make it possible to drive the output circuit of the charge transfer device by a low voltage and to make it suitable for a solid state image pickup element, by providing a depression type IGFET which resets a potential of a floating diffused layer into which the signal charge is transferred from a charge transfer part. CONSTITUTION:A CCD element 11 which is to become the charge transfer part is formed in a semiconductor substrate 20, and the depression type, embedded CCD charge transfer part 14 is formed below the CCD element 11 and the output gate 13. The floating diffused layer 3 is formed at the same time as the formation of said transfer part 14. A lower channel part 16 beneath a reset gate 15 surrounded by the layer 3 and a drain 5 is also of the depression type. Transistors 6, 7, 9, and 10, which are connected to the floating diffused layer 3, are formed in the substrate 20 so as to form a unitary body. Thus the manufacturing method is simplified, and the low voltage driving is facilitated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56058262A JPS57172766A (en) | 1981-04-16 | 1981-04-16 | Charge transfer device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56058262A JPS57172766A (en) | 1981-04-16 | 1981-04-16 | Charge transfer device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57172766A true JPS57172766A (en) | 1982-10-23 |
Family
ID=13079238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56058262A Pending JPS57172766A (en) | 1981-04-16 | 1981-04-16 | Charge transfer device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57172766A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61131854U (en) * | 1985-02-06 | 1986-08-18 | ||
| JPH01502634A (en) * | 1986-09-18 | 1989-09-07 | イーストマン・コダック・カンパニー | Image sensor output circuit |
| US7755690B2 (en) * | 1997-08-15 | 2010-07-13 | Sony Corporation | Solid state image sensor with fixed pattern noise reduction |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5632764A (en) * | 1979-08-27 | 1981-04-02 | Nec Corp | Charge coupled device |
-
1981
- 1981-04-16 JP JP56058262A patent/JPS57172766A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5632764A (en) * | 1979-08-27 | 1981-04-02 | Nec Corp | Charge coupled device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61131854U (en) * | 1985-02-06 | 1986-08-18 | ||
| JPH01502634A (en) * | 1986-09-18 | 1989-09-07 | イーストマン・コダック・カンパニー | Image sensor output circuit |
| US7755690B2 (en) * | 1997-08-15 | 2010-07-13 | Sony Corporation | Solid state image sensor with fixed pattern noise reduction |
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