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JPS57172740A - Heat treating method for compound semiconductor - Google Patents

Heat treating method for compound semiconductor

Info

Publication number
JPS57172740A
JPS57172740A JP56058192A JP5819281A JPS57172740A JP S57172740 A JPS57172740 A JP S57172740A JP 56058192 A JP56058192 A JP 56058192A JP 5819281 A JP5819281 A JP 5819281A JP S57172740 A JPS57172740 A JP S57172740A
Authority
JP
Japan
Prior art keywords
furnace
compound semiconductor
temperature
decomposed
inp substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56058192A
Other languages
Japanese (ja)
Inventor
Kazuhisa Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56058192A priority Critical patent/JPS57172740A/en
Publication of JPS57172740A publication Critical patent/JPS57172740A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To perform heat treatment with the decomposition of the compound semiconductor under treatment being suppressed, by increasing the temperature of a second furnace, introducing atmospheric gas, decomposing a same compound semiconductor as the semiconductor under treatment, and supplying the gas, which is filled up with elements, to a first furnace. CONSTITUTION:The temperature of a quartz glass crucible 5 containing InP4 is heated up to 800 deg.C, and the crucible is placed in the second furnace 2 wherein N2 flows. InP4 is decomposed in the furnace 2 under the high temperature, and N2 is filled up with evaporated P. Said atmospheric gas is sent to the first furnace 1. After 10min, an InP substrate 6 on which Si3N4 is to be grown is put in a quartz glass boat 7 and placed in the furnace 1 at the temperature of 650 deg.C. After 10min, NH3 and SiH4 are supplied to the furnace 1. In the furnace 1, new evaporation of P into the atmosphere due to the decomposition of the InP substrate 6 is suppressed. Therefore, when the supply of the source gas is stopped after 20min and the boat 7 is taken out of the furnace 1, the InP substrate 6 is not decomposed, and an Si3N4 film is layered. This method is convenient and effective for the heat treatment of the compound semiconductor which is readily decomposed.
JP56058192A 1981-04-16 1981-04-16 Heat treating method for compound semiconductor Pending JPS57172740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56058192A JPS57172740A (en) 1981-04-16 1981-04-16 Heat treating method for compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56058192A JPS57172740A (en) 1981-04-16 1981-04-16 Heat treating method for compound semiconductor

Publications (1)

Publication Number Publication Date
JPS57172740A true JPS57172740A (en) 1982-10-23

Family

ID=13077150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56058192A Pending JPS57172740A (en) 1981-04-16 1981-04-16 Heat treating method for compound semiconductor

Country Status (1)

Country Link
JP (1) JPS57172740A (en)

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