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JPS6441210A - Manufacture of sic thin-film - Google Patents

Manufacture of sic thin-film

Info

Publication number
JPS6441210A
JPS6441210A JP19764687A JP19764687A JPS6441210A JP S6441210 A JPS6441210 A JP S6441210A JP 19764687 A JP19764687 A JP 19764687A JP 19764687 A JP19764687 A JP 19764687A JP S6441210 A JPS6441210 A JP S6441210A
Authority
JP
Japan
Prior art keywords
film
thin
beams
wavelength
large area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19764687A
Other languages
Japanese (ja)
Inventor
Kenji Sera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19764687A priority Critical patent/JPS6441210A/en
Publication of JPS6441210A publication Critical patent/JPS6441210A/en
Pending legal-status Critical Current

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a thin-film having high mobility on a large area by a low temperature process by irradiating an amorphous silicon thin-film or a polycrystalline silicon thin-film with ultraviolet pulse beams having a wavelength of 400nm or less in an atmosphere containing carbon. CONSTITUTION:An amorphous silicon thin-film 2 is formed onto a glass substrate 1 through a plasma CVD method. The upper section of the thin-film 2 is irradiated with ultraviolet pulse laser beams 3 having a wavelength of 400nm or less, and the amorphous silicon film is changed into polycrystals. A laser must be applied in a gas atmosphere including carbon 4. An excimer laser, from which uniform beams are acquired on a large area, is proper as ultraviolet pulse beams having the wavelength of 400nm or less. Accordingly, the thin-film having high mobility is obtained on the large area by a low temperature process.
JP19764687A 1987-08-07 1987-08-07 Manufacture of sic thin-film Pending JPS6441210A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19764687A JPS6441210A (en) 1987-08-07 1987-08-07 Manufacture of sic thin-film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19764687A JPS6441210A (en) 1987-08-07 1987-08-07 Manufacture of sic thin-film

Publications (1)

Publication Number Publication Date
JPS6441210A true JPS6441210A (en) 1989-02-13

Family

ID=16377952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19764687A Pending JPS6441210A (en) 1987-08-07 1987-08-07 Manufacture of sic thin-film

Country Status (1)

Country Link
JP (1) JPS6441210A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000315805A (en) * 1999-04-28 2000-11-14 Nagano Keiki Co Ltd Strain detecting element and manufacture of the same
JP2012049397A (en) * 2010-08-27 2012-03-08 Sumco Corp Method of manufacturing silicon wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000315805A (en) * 1999-04-28 2000-11-14 Nagano Keiki Co Ltd Strain detecting element and manufacture of the same
JP2012049397A (en) * 2010-08-27 2012-03-08 Sumco Corp Method of manufacturing silicon wafer

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