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JPS57164591A - Photosemiconductor device - Google Patents

Photosemiconductor device

Info

Publication number
JPS57164591A
JPS57164591A JP56048636A JP4863681A JPS57164591A JP S57164591 A JPS57164591 A JP S57164591A JP 56048636 A JP56048636 A JP 56048636A JP 4863681 A JP4863681 A JP 4863681A JP S57164591 A JPS57164591 A JP S57164591A
Authority
JP
Japan
Prior art keywords
electrodes
active layer
deflection
layer
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56048636A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56048636A priority Critical patent/JPS57164591A/en
Publication of JPS57164591A publication Critical patent/JPS57164591A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To contrive the miniaturization by the integration of a complex photo device, by crossing the double hetero structure in right angle with stripe and dividing into two by a groove which reaches an active layer to arrange electrodes for laser oscillation and deflection on one side and by providing a light receiver or light guide on the other side. CONSTITUTION:An N type GaAlAs layer 2, P or N type GaAs active layer 3 and P type GaAlAs confining layer 4 are successively provided on an N type GaAs substrate 1 being divided into two by a groove 8 which reaches the active layer 3. Electrodes for deflection 11, 13 are provided on a lateral direction of the confining layer 4, and electrodes 12 for laser oscillation on the active layer. The electrodes for laser oscillation and deflection are respectively insulated to form a structure with two symmetrical parts connected to external terminals via the groove 8 with one side for the luminous source and the other side for the light receiver. Thus, a photo functional device is integrated by the presence of the luminous source, deflector and light receiver on the same substrate.
JP56048636A 1981-04-01 1981-04-01 Photosemiconductor device Pending JPS57164591A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56048636A JPS57164591A (en) 1981-04-01 1981-04-01 Photosemiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56048636A JPS57164591A (en) 1981-04-01 1981-04-01 Photosemiconductor device

Publications (1)

Publication Number Publication Date
JPS57164591A true JPS57164591A (en) 1982-10-09

Family

ID=12808853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56048636A Pending JPS57164591A (en) 1981-04-01 1981-04-01 Photosemiconductor device

Country Status (1)

Country Link
JP (1) JPS57164591A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60163482A (en) * 1984-01-20 1985-08-26 アメリカン　テレフオン　アンド　テレグラフ　カムパニー Photoelectric device
US4710936A (en) * 1984-04-12 1987-12-01 Matsushita Electric Industrial Co., Ltd. Optoelectronic semiconductor device
JPS62285484A (en) * 1986-06-04 1987-12-11 Hitachi Ltd Semiconductor laser device with monitor
US4950622A (en) * 1988-04-28 1990-08-21 Korea Advanced Institute Of Science And Technology Method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor laser diode

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS537188A (en) * 1976-07-09 1978-01-23 Nec Corp Light beam deflector including semiconductor laser
JPS5339142A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Photo deflecting element
JPS5591892A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Semiconductor laser light emission device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS537188A (en) * 1976-07-09 1978-01-23 Nec Corp Light beam deflector including semiconductor laser
JPS5339142A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Photo deflecting element
JPS5591892A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Semiconductor laser light emission device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60163482A (en) * 1984-01-20 1985-08-26 アメリカン　テレフオン　アンド　テレグラフ　カムパニー Photoelectric device
US4710936A (en) * 1984-04-12 1987-12-01 Matsushita Electric Industrial Co., Ltd. Optoelectronic semiconductor device
JPS62285484A (en) * 1986-06-04 1987-12-11 Hitachi Ltd Semiconductor laser device with monitor
US4950622A (en) * 1988-04-28 1990-08-21 Korea Advanced Institute Of Science And Technology Method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor laser diode

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