JPS57162830A - Schmitt trigger circuit - Google Patents
Schmitt trigger circuitInfo
- Publication number
- JPS57162830A JPS57162830A JP4908881A JP4908881A JPS57162830A JP S57162830 A JPS57162830 A JP S57162830A JP 4908881 A JP4908881 A JP 4908881A JP 4908881 A JP4908881 A JP 4908881A JP S57162830 A JPS57162830 A JP S57162830A
- Authority
- JP
- Japan
- Prior art keywords
- mosfets
- fet
- low
- output voltage
- vin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/3565—Bistables with hysteresis, e.g. Schmitt trigger
Landscapes
- Manipulation Of Pulses (AREA)
Abstract
PURPOSE:To increase the width of hysteresis, by cascade connection of two stages of CMOS inverters and connecting a series circuit between an FET to which an input voltage is applied and an FET to which an output voltage is applied, in parallel with one FET of the first stage inverter. CONSTITUTION:An input signal VIN is applied to an inverter consisting of MOSFETs P1 and N1, and the output signal is applied to an inverter consisting of MOSFETs P4 and N2. The input voltage VIN is applied to the gate of a MOSFET P2 through a series circuit connection of MOSFETs P2 and P3 to the MOSFETP1, and an output voltage VOUT is applied to the gate of the MOSFETP3. When the input voltage VIN is at a low level, the output voltage VOUT is also at a low level, the MOSFETs P2 and P3 are conductive, the synthetic impedance of the MOSFETs P1, P2 and P3 is low and the threshold voltage when transition is made from low to high level, is increased.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4908881A JPS57162830A (en) | 1981-03-31 | 1981-03-31 | Schmitt trigger circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4908881A JPS57162830A (en) | 1981-03-31 | 1981-03-31 | Schmitt trigger circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57162830A true JPS57162830A (en) | 1982-10-06 |
Family
ID=12821335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4908881A Pending JPS57162830A (en) | 1981-03-31 | 1981-03-31 | Schmitt trigger circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57162830A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59122218A (en) * | 1982-12-28 | 1984-07-14 | Nippon Texas Instr Kk | Hysteresis circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5694827A (en) * | 1979-12-27 | 1981-07-31 | Seiko Epson Corp | Cmos schmitt trigger circuit |
-
1981
- 1981-03-31 JP JP4908881A patent/JPS57162830A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5694827A (en) * | 1979-12-27 | 1981-07-31 | Seiko Epson Corp | Cmos schmitt trigger circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59122218A (en) * | 1982-12-28 | 1984-07-14 | Nippon Texas Instr Kk | Hysteresis circuit |
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