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JPS57162482A - Semiconductor luminous device and manufacture thereof - Google Patents

Semiconductor luminous device and manufacture thereof

Info

Publication number
JPS57162482A
JPS57162482A JP4797981A JP4797981A JPS57162482A JP S57162482 A JPS57162482 A JP S57162482A JP 4797981 A JP4797981 A JP 4797981A JP 4797981 A JP4797981 A JP 4797981A JP S57162482 A JPS57162482 A JP S57162482A
Authority
JP
Japan
Prior art keywords
substrate
layer
type
semiconductor
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4797981A
Other languages
Japanese (ja)
Inventor
Tsugunori Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4797981A priority Critical patent/JPS57162482A/en
Publication of JPS57162482A publication Critical patent/JPS57162482A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain the flat photoconductive wave channel without the etching process by a method wherein the semiconductor substrate is provided with a stripe type mask and the semiconductor layers of the conductive type similar to and opposite to that of the substrate are laminated on said substrate and removing said mask, the active layer is embedded therein. CONSTITUTION:The N type semiconductor substrate 21 is coated with the SiO2 film 22 formed into a stripe type mask by means of patterning and the P type InP inversed bias joint formed semiconductor layer 23 and the N type InP inversed bias joint formed semiconductor layer 24 are laminated to be grown on the substrate 21 surrounding said film 22 by means of the liquidus epitaxial growth. Next after removing said film 22, the surface of said substrate 21 exposed like stripe is cleaned up and the InGaAsP active layer 25 is embedded in the surface of said substrate 21 exposed again by means of the liquidus epitaxial growth. Then the P type InP clad layer 26 spread on the layer 24 covering said layer 25 is formed to be further covered with the P type InGaAsP contact layer 27.
JP4797981A 1981-03-31 1981-03-31 Semiconductor luminous device and manufacture thereof Pending JPS57162482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4797981A JPS57162482A (en) 1981-03-31 1981-03-31 Semiconductor luminous device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4797981A JPS57162482A (en) 1981-03-31 1981-03-31 Semiconductor luminous device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57162482A true JPS57162482A (en) 1982-10-06

Family

ID=12790424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4797981A Pending JPS57162482A (en) 1981-03-31 1981-03-31 Semiconductor luminous device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57162482A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04125059U (en) * 1991-04-16 1992-11-13 サンハヤト株式会社 electric soldering iron
US5179040A (en) * 1990-07-16 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor laser device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5347233A (en) * 1976-10-12 1978-04-27 Canon Inc Charcter wheel control device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5347233A (en) * 1976-10-12 1978-04-27 Canon Inc Charcter wheel control device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5179040A (en) * 1990-07-16 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor laser device
JPH04125059U (en) * 1991-04-16 1992-11-13 サンハヤト株式会社 electric soldering iron

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