JPS5715452A - Transistor module - Google Patents
Transistor moduleInfo
- Publication number
- JPS5715452A JPS5715452A JP9010780A JP9010780A JPS5715452A JP S5715452 A JPS5715452 A JP S5715452A JP 9010780 A JP9010780 A JP 9010780A JP 9010780 A JP9010780 A JP 9010780A JP S5715452 A JPS5715452 A JP S5715452A
- Authority
- JP
- Japan
- Prior art keywords
- composite
- composites
- module
- electrode terminal
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
- H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
PURPOSE:To miniaturize power transistor composites with an easier parallel connection by connecting the emitter or the first composite and the collector of the second composite so as to be housed in a common container with an electrode terminal led to top thereof. CONSTITUTION:For example, composites I and II having power transistors connected by Darlington arrangement are fastened on a metal base plate 13 through an insulating plates 11a and 11b. Collector lead terminals 1a and 1b are mounted to each composite and a printed board 14 with a wiring layer is arranged as supported with the terminals 1a and 1b. The electrodes of the composites the soldered to the wiring layer in a fixed arrangement. Then, an emitter electrode terminal 9b of the composite II is mounted at a fixed position of the printed board 14 while an electrode terminal (10b or the like) is mounted at the end thereof to be connected to the base and the emitter of each composite. Subsequently, a resin 16 is injected into a package 15 to make a module by hardening. This enables smaller module while facilitating the parallel connection of the module.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9010780A JPS5715452A (en) | 1980-06-30 | 1980-06-30 | Transistor module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9010780A JPS5715452A (en) | 1980-06-30 | 1980-06-30 | Transistor module |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5715452A true JPS5715452A (en) | 1982-01-26 |
Family
ID=13989287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9010780A Pending JPS5715452A (en) | 1980-06-30 | 1980-06-30 | Transistor module |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5715452A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4694322A (en) * | 1983-09-29 | 1987-09-15 | Kabushiki Kaisha Toshiba | Press-packed semiconductor device |
US5029322A (en) * | 1986-11-17 | 1991-07-02 | Siemens Aktiengesellschaft | Power MOSFET with current-monitoring |
US5291065A (en) * | 1991-12-16 | 1994-03-01 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of fabricating semiconductor device |
US5430326A (en) * | 1992-06-26 | 1995-07-04 | Fuji Electric Co., Ltd. | Semiconductor device for mounting on a printed wiring board |
JP2012004543A (en) * | 2010-05-17 | 2012-01-05 | Fuji Electric Co Ltd | Semiconductor unit, and semiconductor device using the same |
-
1980
- 1980-06-30 JP JP9010780A patent/JPS5715452A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4694322A (en) * | 1983-09-29 | 1987-09-15 | Kabushiki Kaisha Toshiba | Press-packed semiconductor device |
US5029322A (en) * | 1986-11-17 | 1991-07-02 | Siemens Aktiengesellschaft | Power MOSFET with current-monitoring |
US5291065A (en) * | 1991-12-16 | 1994-03-01 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of fabricating semiconductor device |
US5430326A (en) * | 1992-06-26 | 1995-07-04 | Fuji Electric Co., Ltd. | Semiconductor device for mounting on a printed wiring board |
JP2012004543A (en) * | 2010-05-17 | 2012-01-05 | Fuji Electric Co Ltd | Semiconductor unit, and semiconductor device using the same |
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