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JPS57153477A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57153477A
JPS57153477A JP56038484A JP3848481A JPS57153477A JP S57153477 A JPS57153477 A JP S57153477A JP 56038484 A JP56038484 A JP 56038484A JP 3848481 A JP3848481 A JP 3848481A JP S57153477 A JPS57153477 A JP S57153477A
Authority
JP
Japan
Prior art keywords
sbd
base
substrate
collector
high integration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56038484A
Other languages
Japanese (ja)
Inventor
Susumu Oi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56038484A priority Critical patent/JPS57153477A/en
Publication of JPS57153477A publication Critical patent/JPS57153477A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To facilitate high speed and high integration by forming a metal film selectively in the p region of an n type Si substrate and by extending the metal film to the substrate penetrating the p region by a high temperature treatment thereby forming Schottky barrier diode SBD of a very small area with a protective ring. CONSTITUTION:A p base 502 and an n emitter 503 are formed on an n type Si substrate of face azimuth (100), and a compound spike is created penetrating a thin base layer 502 by a high temperature treatment of metal 507 deposited on an opening made on SiO2 504. As a result, SBD is formed and connected with a base and collector. Then an emitter and collector electrodes 506, 505 are formed preventing the penetration by the electrode 506. By this construction, the SBD 9 formed under the base 502 has no effect on high integration, and because a p-n junction of the collector 501 and the base 502 near the SBD has a effect of a protective ring, the SBD has a superb reverse direction property providing a device with high speed and high integration.
JP56038484A 1981-03-17 1981-03-17 Manufacture of semiconductor device Pending JPS57153477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56038484A JPS57153477A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56038484A JPS57153477A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57153477A true JPS57153477A (en) 1982-09-22

Family

ID=12526526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56038484A Pending JPS57153477A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57153477A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS613470A (en) * 1984-06-18 1986-01-09 Nec Corp semiconductor equipment
JP2014187192A (en) * 2013-03-22 2014-10-02 Toshiba Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS613470A (en) * 1984-06-18 1986-01-09 Nec Corp semiconductor equipment
JP2014187192A (en) * 2013-03-22 2014-10-02 Toshiba Corp Semiconductor device

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