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JPS57147236A - Removing method for extraneous matter on reaction pipe for vapor growth device - Google Patents

Removing method for extraneous matter on reaction pipe for vapor growth device

Info

Publication number
JPS57147236A
JPS57147236A JP3255681A JP3255681A JPS57147236A JP S57147236 A JPS57147236 A JP S57147236A JP 3255681 A JP3255681 A JP 3255681A JP 3255681 A JP3255681 A JP 3255681A JP S57147236 A JPS57147236 A JP S57147236A
Authority
JP
Japan
Prior art keywords
reaction pipe
extraneous matter
plasma
gas
removing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3255681A
Other languages
Japanese (ja)
Inventor
Junichi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Kokusai Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Co Ltd filed Critical Kokusai Electric Co Ltd
Priority to JP3255681A priority Critical patent/JPS57147236A/en
Publication of JPS57147236A publication Critical patent/JPS57147236A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To eliminate the need for extracting and removing the reaction pipe in order to remove the extraneous matter on a reaction pipe wall, and to unnecessitate the lowering of the temperature of a reaction oven by generating gas plasma by disposing an electrode for generating plasma and removing the extraneous matter. CONSTITUTION:A gas system 5 is controlled by means of a gas controller 6, and an etching gas is injected into the reaction pipe 4. An oscillator 7 for plasma is actuated, plasma is generated in the reaction pipe held by the electrode 3 surrounding the reaction pipe, and the extraneous matter is removed. The extraneous matter is removed, the oscillation of plasma is stopped, and the original forming process of a CVD film can be started.
JP3255681A 1981-03-09 1981-03-09 Removing method for extraneous matter on reaction pipe for vapor growth device Pending JPS57147236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3255681A JPS57147236A (en) 1981-03-09 1981-03-09 Removing method for extraneous matter on reaction pipe for vapor growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3255681A JPS57147236A (en) 1981-03-09 1981-03-09 Removing method for extraneous matter on reaction pipe for vapor growth device

Publications (1)

Publication Number Publication Date
JPS57147236A true JPS57147236A (en) 1982-09-11

Family

ID=12362184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3255681A Pending JPS57147236A (en) 1981-03-09 1981-03-09 Removing method for extraneous matter on reaction pipe for vapor growth device

Country Status (1)

Country Link
JP (1) JPS57147236A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61127120A (en) * 1984-11-26 1986-06-14 Semiconductor Energy Lab Co Ltd Formation of thin film
JPS61127122A (en) * 1984-11-26 1986-06-14 Semiconductor Energy Lab Co Ltd Formation of thin film
JPH0214520A (en) * 1988-06-08 1990-01-18 Tel Sagami Ltd Treatment by plasma
JPH0214523A (en) * 1988-06-13 1990-01-18 Tel Sagami Ltd Treatment by plasma
JPH0214522A (en) * 1988-06-13 1990-01-18 Tel Sagami Ltd Treatment by plasma

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61127120A (en) * 1984-11-26 1986-06-14 Semiconductor Energy Lab Co Ltd Formation of thin film
JPS61127122A (en) * 1984-11-26 1986-06-14 Semiconductor Energy Lab Co Ltd Formation of thin film
JPH0351292B2 (en) * 1984-11-26 1991-08-06 Handotai Energy Kenkyusho
JPH0214520A (en) * 1988-06-08 1990-01-18 Tel Sagami Ltd Treatment by plasma
JPH0214523A (en) * 1988-06-13 1990-01-18 Tel Sagami Ltd Treatment by plasma
JPH0214522A (en) * 1988-06-13 1990-01-18 Tel Sagami Ltd Treatment by plasma

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