JPS57145355A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57145355A JPS57145355A JP56030833A JP3083381A JPS57145355A JP S57145355 A JPS57145355 A JP S57145355A JP 56030833 A JP56030833 A JP 56030833A JP 3083381 A JP3083381 A JP 3083381A JP S57145355 A JPS57145355 A JP S57145355A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- emitter
- sensitive
- base
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/10—Integrated device layouts
- H10D89/105—Integrated device layouts adapted for thermal considerations
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:To prevent the thermal runaway of a main transistor by arranging a temperature-sensitive transistor of a Darlington composition between the region of the controlling electrode of the main transistor and the region of the controlled electrode thereof on a same substrate. CONSTITUTION:A p<-> base 8 on the n<+> collector 7 of the main transistor (TR)1 is separated by n-layers 9 and 18, and the n<+> emitter 10 of Tr 1, the n<+> emitter 12 and n<+> collector 14 of the output side Tr 2 of a temperature-sensitive Darlington connection Tr, and the n<+> collector 16 and n<+> emitter 17 of the input side Tr 6 of the same connection are formed selectively. Moreover, the p<+> base electrode take-out layers 11 and 13 of Tr 2 are provided and an electrode 19 is attached to an n<+> layer 7. According to this constitution, temperature -sensitive transistors 2-6 of the Darlington connection are connected between the base and emitter of the main transistor, a base current is led to the side of the temperature-sensitive Tr 2-6 with high sensitivity when the temperature of the main Tr 1 rises, while the operation is discontinued when it falls, and thus a self-reset type device having very excellent responsiveness and provided with a protecting function against overheat is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56030833A JPS57145355A (en) | 1981-03-04 | 1981-03-04 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56030833A JPS57145355A (en) | 1981-03-04 | 1981-03-04 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57145355A true JPS57145355A (en) | 1982-09-08 |
Family
ID=12314696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56030833A Pending JPS57145355A (en) | 1981-03-04 | 1981-03-04 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57145355A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4639755A (en) * | 1981-09-01 | 1987-01-27 | Kabushiki Kaisha Daini Seikosha | Thermosensitive semiconductor device using Darlington circuit |
| US4760434A (en) * | 1985-11-29 | 1988-07-26 | Nippondenso Co., Ltd. | Semiconductor device with protective means against overheating |
| US4945396A (en) * | 1986-12-15 | 1990-07-31 | Fuji Electric Co., Ltd. | Semiconductor device having Darlington transistors |
-
1981
- 1981-03-04 JP JP56030833A patent/JPS57145355A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4639755A (en) * | 1981-09-01 | 1987-01-27 | Kabushiki Kaisha Daini Seikosha | Thermosensitive semiconductor device using Darlington circuit |
| US4760434A (en) * | 1985-11-29 | 1988-07-26 | Nippondenso Co., Ltd. | Semiconductor device with protective means against overheating |
| US4896199A (en) * | 1985-11-29 | 1990-01-23 | Nippondenso Co., Ltd. | Semiconductor device with protective means against overheating |
| US4945396A (en) * | 1986-12-15 | 1990-07-31 | Fuji Electric Co., Ltd. | Semiconductor device having Darlington transistors |
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