JPS57133630A - Formation of metal silicide - Google Patents
Formation of metal silicideInfo
- Publication number
- JPS57133630A JPS57133630A JP1925681A JP1925681A JPS57133630A JP S57133630 A JPS57133630 A JP S57133630A JP 1925681 A JP1925681 A JP 1925681A JP 1925681 A JP1925681 A JP 1925681A JP S57133630 A JPS57133630 A JP S57133630A
- Authority
- JP
- Japan
- Prior art keywords
- film
- heat treatment
- metal
- region
- metal silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 title abstract 6
- 229910052751 metal Inorganic materials 0.000 title abstract 6
- 229910021332 silicide Inorganic materials 0.000 title abstract 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title abstract 3
- 230000015572 biosynthetic process Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 238000010438 heat treatment Methods 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract 2
- 239000006023 eutectic alloy Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000004299 exfoliation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain the metal silicide layer of uniform quality having no effect in the atmosphere of heat treatment by a method wherein the required metal layer, which will be eutectically alloyed with an Si region, is formed on the Si region, or a metal silicide layer is attached on the Si region using CVD method, and a heat treatment is performed while the above is covered by an SiO2 film using CVD. CONSTITUTION:A film 2 such as Ta and the like, with which a eutectic alloy will be formed with Si, is coated in the approximate thickness of 1,000Angstrom on the surface of a single crystal Si substrate 1, and an SiO2 film 3 of 1-2mum in thickness is grown on the film 2 using the CVD method. Then, after a heat treatment has been performed in ordinary N2 gas atmosphere at the temperature range of 700-1,000 deg.C for thirty minutes, the film 3 is removed by exfoliation. Thus, Ta and Si are reacted with each other and a Ta-Si layer is formed on the surface of the substrate 1, but as the SiO2 film is grown by a low temperature plasma, the Ta is not degenerated, and also it is not oxidized when a heat treatment is performed, thereby enabling to obtain the eutectic alloy with a perfect mirror face. As for the metal, W, Mo, Pt and the like may be used as the metal besides Ta.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1925681A JPS57133630A (en) | 1981-02-12 | 1981-02-12 | Formation of metal silicide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1925681A JPS57133630A (en) | 1981-02-12 | 1981-02-12 | Formation of metal silicide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57133630A true JPS57133630A (en) | 1982-08-18 |
Family
ID=11994345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1925681A Pending JPS57133630A (en) | 1981-02-12 | 1981-02-12 | Formation of metal silicide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57133630A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111785622A (en) * | 2020-07-15 | 2020-10-16 | 上海华力集成电路制造有限公司 | Annealing process, device and metal contact layer forming method for forming metal silicide |
-
1981
- 1981-02-12 JP JP1925681A patent/JPS57133630A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111785622A (en) * | 2020-07-15 | 2020-10-16 | 上海华力集成电路制造有限公司 | Annealing process, device and metal contact layer forming method for forming metal silicide |
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