JPS57132329A - Fine processing method - Google Patents
Fine processing methodInfo
- Publication number
- JPS57132329A JPS57132329A JP1860681A JP1860681A JPS57132329A JP S57132329 A JPS57132329 A JP S57132329A JP 1860681 A JP1860681 A JP 1860681A JP 1860681 A JP1860681 A JP 1860681A JP S57132329 A JPS57132329 A JP S57132329A
- Authority
- JP
- Japan
- Prior art keywords
- charged beam
- aiming
- sample
- etching
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To contrive the improvement of processing by inducing reactive gas or gas plasma in a sample chamber in performing fine processing by aiming a charged beam at a processed substance. CONSTITUTION:A charged beam 2 taken out of a charged beam generating chamber 1, for example, a CF3<+> ion is accelerated at 200-300V and etching is performed by aiming the charged beam 2 at a sample 4 to be processed, for example, Si. At that time, the gas pressure in a sample chamber 3 is maintained at about 1-10 Pas. As the result, a decrease in etching speed is not recognized. And the etching speed can be further increased by aiming an electromagnetic wave 7, for example, infrared rays, at the sample 4 to be processed from an electromagnetic waves generator 8. Furthermore, even if a processing material is changed, fine processing can be done by materials except Si if a suitable charged beam and gas or plasma, electromagnetic wave permitting etching for the material by sublimation or evaporation are selected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1860681A JPS57132329A (en) | 1981-02-10 | 1981-02-10 | Fine processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1860681A JPS57132329A (en) | 1981-02-10 | 1981-02-10 | Fine processing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57132329A true JPS57132329A (en) | 1982-08-16 |
Family
ID=11976295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1860681A Pending JPS57132329A (en) | 1981-02-10 | 1981-02-10 | Fine processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57132329A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01316931A (en) * | 1988-06-16 | 1989-12-21 | Nippon Telegr & Teleph Corp <Ntt> | Fine pattern formation |
| JPH0786213A (en) * | 1993-06-24 | 1995-03-31 | Nec Corp | Copper microprocessing method and copper microprocessor |
-
1981
- 1981-02-10 JP JP1860681A patent/JPS57132329A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01316931A (en) * | 1988-06-16 | 1989-12-21 | Nippon Telegr & Teleph Corp <Ntt> | Fine pattern formation |
| JPH0786213A (en) * | 1993-06-24 | 1995-03-31 | Nec Corp | Copper microprocessing method and copper microprocessor |
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