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JPS57124482A - Solar cell - Google Patents

Solar cell

Info

Publication number
JPS57124482A
JPS57124482A JP56009723A JP972381A JPS57124482A JP S57124482 A JPS57124482 A JP S57124482A JP 56009723 A JP56009723 A JP 56009723A JP 972381 A JP972381 A JP 972381A JP S57124482 A JPS57124482 A JP S57124482A
Authority
JP
Japan
Prior art keywords
type
solar cell
single crystal
silicon
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56009723A
Other languages
Japanese (ja)
Inventor
Katsumi Murase
Toshiro Ogino
Akitsu Takeda
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56009723A priority Critical patent/JPS57124482A/en
Publication of JPS57124482A publication Critical patent/JPS57124482A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To reduce manufacturing cost by forming an N type region in a single crystal and shaping a P type region in P type amorphous silicon in the PIN type solar cell. CONSTITUTION:A material obtained by growing non-doped single crystal silicon 2 on low resistance N type single crystal silicon 1 in an epitaxial shape is used as a substrate, and the low resistance P type amorphous silicon 3 is deposited on the substrate. A thin silicon film can be deposited by employing the amorphous silicon 3, and the solar cell can be manufactured at low cost.
JP56009723A 1981-01-27 1981-01-27 Solar cell Pending JPS57124482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56009723A JPS57124482A (en) 1981-01-27 1981-01-27 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56009723A JPS57124482A (en) 1981-01-27 1981-01-27 Solar cell

Publications (1)

Publication Number Publication Date
JPS57124482A true JPS57124482A (en) 1982-08-03

Family

ID=11728211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56009723A Pending JPS57124482A (en) 1981-01-27 1981-01-27 Solar cell

Country Status (1)

Country Link
JP (1) JPS57124482A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175170A (en) * 1983-03-24 1984-10-03 Yoshihiro Hamakawa Hetero junction solar battery and manufacture thereof
JP2006324686A (en) * 1996-11-01 2006-11-30 Lawrence Berkeley Laboratory Photon sensing element and device using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511329A (en) * 1978-07-08 1980-01-26 Shunpei Yamazaki Semiconductor device
JPS5633888A (en) * 1979-08-29 1981-04-04 Seiko Epson Corp Solar battery

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511329A (en) * 1978-07-08 1980-01-26 Shunpei Yamazaki Semiconductor device
JPS5633888A (en) * 1979-08-29 1981-04-04 Seiko Epson Corp Solar battery

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175170A (en) * 1983-03-24 1984-10-03 Yoshihiro Hamakawa Hetero junction solar battery and manufacture thereof
JP2006324686A (en) * 1996-11-01 2006-11-30 Lawrence Berkeley Laboratory Photon sensing element and device using the same

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