JPS5412280A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5412280A JPS5412280A JP7646477A JP7646477A JPS5412280A JP S5412280 A JPS5412280 A JP S5412280A JP 7646477 A JP7646477 A JP 7646477A JP 7646477 A JP7646477 A JP 7646477A JP S5412280 A JPS5412280 A JP S5412280A
- Authority
- JP
- Japan
- Prior art keywords
- resistnace
- semiconductor device
- crystal
- elements
- varlation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 3
- 238000000465 moulding Methods 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To eliminate or reduce the resistnace value varlation s of resistance elements after sealing with molding resin by providing isolated P type resistnace elements of crystal axis [010] or [001] in current direction to a Si substrate having surface crystal orientation substantially parallel with crystal plane (100).
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7646477A JPS5412280A (en) | 1977-06-29 | 1977-06-29 | Semiconductor device |
DE2828608A DE2828608B2 (en) | 1977-06-29 | 1978-06-29 | Semiconductor device |
FR7819523A FR2396413A1 (en) | 1977-06-29 | 1978-06-29 | P-TYPE CONDUCTIVE RESISTANCE LAYER SEMICONDUCTOR COMPONENT |
GB7828267A GB2000640A (en) | 1977-06-29 | 1978-06-29 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7646477A JPS5412280A (en) | 1977-06-29 | 1977-06-29 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5412280A true JPS5412280A (en) | 1979-01-29 |
Family
ID=13605877
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7646477A Pending JPS5412280A (en) | 1977-06-29 | 1977-06-29 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5412280A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57198651A (en) * | 1981-05-30 | 1982-12-06 | Toshiba Corp | Semiconductor device having integrated injection logic structure |
US4875011A (en) * | 1986-03-07 | 1989-10-17 | Seiko Instruments Inc. | Magnetic sensor using integrated silicon Hall effect elements formed on the (100) plane of a silicon substrate |
-
1977
- 1977-06-29 JP JP7646477A patent/JPS5412280A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57198651A (en) * | 1981-05-30 | 1982-12-06 | Toshiba Corp | Semiconductor device having integrated injection logic structure |
US4875011A (en) * | 1986-03-07 | 1989-10-17 | Seiko Instruments Inc. | Magnetic sensor using integrated silicon Hall effect elements formed on the (100) plane of a silicon substrate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU504667B2 (en) | Semiconductor device with passivating layer | |
JPS5365066A (en) | Semiconductor device | |
JPS5412280A (en) | Semiconductor device | |
JPS5216147A (en) | Pacage method for surface elastic wave element | |
JPS5558557A (en) | Resin mold type electronic component and lead frame used therefor | |
JPS5379381A (en) | Production of resin seal type semiconductor device and lead frame used forthe same | |
JPS51140581A (en) | Semiconductor resistance element | |
JPS5220769A (en) | Longitudinal semi-conductor unit | |
JPS5214387A (en) | Semiconductor device | |
JPS56126971A (en) | Thin film field effect element | |
JPS5412576A (en) | Semiconductor device | |
JPS5419381A (en) | Semiconductor device | |
JPS5412281A (en) | Semiconductor device | |
JPS5275278A (en) | Semiconductor device | |
JPS52106678A (en) | Resin sealed type semiconductor device | |
GB2000640A (en) | Semiconductor device | |
JPS52117692A (en) | Preparation of sample with polished surface | |
JPS5419378A (en) | Semiconductor device | |
JPS5412575A (en) | Semiconductor device | |
JPS5419379A (en) | Semiconductor device | |
GB2001195A (en) | Semiconductor device | |
JPS52120780A (en) | Semiconductor device | |
JPS5383470A (en) | Silicon planar type semiconductor element | |
JPS5368988A (en) | Production of semiconductor device | |
JPS53143183A (en) | Semicondutor integrated circuit device and production of the same |