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JPS5711899A - Molecular beam epitaxial growth - Google Patents

Molecular beam epitaxial growth

Info

Publication number
JPS5711899A
JPS5711899A JP8533680A JP8533680A JPS5711899A JP S5711899 A JPS5711899 A JP S5711899A JP 8533680 A JP8533680 A JP 8533680A JP 8533680 A JP8533680 A JP 8533680A JP S5711899 A JPS5711899 A JP S5711899A
Authority
JP
Japan
Prior art keywords
base plate
temperature
epitaxial growth
metallized
supporter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8533680A
Other languages
Japanese (ja)
Other versions
JPS632920B2 (en
Inventor
Toshio Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8533680A priority Critical patent/JPS5711899A/en
Publication of JPS5711899A publication Critical patent/JPS5711899A/en
Publication of JPS632920B2 publication Critical patent/JPS632920B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: The base plate is gradually heated until the elements in the base plate vaporize and the temperature of the base plate is steeply raised by thermal radiation, then the material to be metallized is injected to form epitaxial crystal layers of flatness and good quality.
CONSTITUTION: The base plate supporter 2 having the electric heater 3 built in is set in the high-vacuum chamber 1 and the base plate 4 of polymorphic semiconductor is placed on the supporter. The base plate 4 is preheated with the heater 3 until the temperature reaches the one at which the component elements in the base plate begin vaporizing. At this time, the base plate 4 is irradiated with the halogen lamp 12 to raise the temperature steeply and make the surface clean. Then, the temperature of the base plate 4 is a little raised and the substances to be metallized in crucibles 6, 7, and 8 are made into atomic beams and shot to the base plate 4 to form the desired epitaxial growth layer on the surface.
COPYRIGHT: (C)1982,JPO&Japio
JP8533680A 1980-06-24 1980-06-24 Molecular beam epitaxial growth Granted JPS5711899A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8533680A JPS5711899A (en) 1980-06-24 1980-06-24 Molecular beam epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8533680A JPS5711899A (en) 1980-06-24 1980-06-24 Molecular beam epitaxial growth

Publications (2)

Publication Number Publication Date
JPS5711899A true JPS5711899A (en) 1982-01-21
JPS632920B2 JPS632920B2 (en) 1988-01-21

Family

ID=13855791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8533680A Granted JPS5711899A (en) 1980-06-24 1980-06-24 Molecular beam epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5711899A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59172715A (en) * 1983-03-22 1984-09-29 Nec Corp Molecular beam generating equipment
JPS61212228A (en) * 1985-03-12 1986-09-20 キヤンベル　ス−プ　カンパニ− Nutrient body for growing mushroom and its production
JPH0867596A (en) * 1994-08-30 1996-03-12 Nec Corp Molecular beam epitaxy apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101779A (en) * 1978-01-16 1979-08-10 Western Electric Co Epitaxial thin film growth method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101779A (en) * 1978-01-16 1979-08-10 Western Electric Co Epitaxial thin film growth method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59172715A (en) * 1983-03-22 1984-09-29 Nec Corp Molecular beam generating equipment
JPH0473285B2 (en) * 1983-03-22 1992-11-20 Nippon Electric Co
JPS61212228A (en) * 1985-03-12 1986-09-20 キヤンベル　ス−プ　カンパニ− Nutrient body for growing mushroom and its production
JPH0867596A (en) * 1994-08-30 1996-03-12 Nec Corp Molecular beam epitaxy apparatus

Also Published As

Publication number Publication date
JPS632920B2 (en) 1988-01-21

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