JPS57115852A - Microwave transistor mount - Google Patents
Microwave transistor mountInfo
- Publication number
- JPS57115852A JPS57115852A JP250081A JP250081A JPS57115852A JP S57115852 A JPS57115852 A JP S57115852A JP 250081 A JP250081 A JP 250081A JP 250081 A JP250081 A JP 250081A JP S57115852 A JPS57115852 A JP S57115852A
- Authority
- JP
- Japan
- Prior art keywords
- line
- substrate
- transistor
- microwave
- impedance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32153—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/32175—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
- H01L2224/32188—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic the layer connector connecting to a bonding area protruding from the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
PURPOSE:To obtain an element configuration without low frequency oscillations by a method wherein a high impedance microstrip line is led from a part of a microstrip line having a characteristic impedance of 50OMEGA and which is formed on a substrate such as alumina ceramic or the like, and with a capacitor and a resistor connected to it. CONSTITUTION:An alumina ceramic substrate 2 is mounted in a brass chamber 1, and a microstrip line 3 is formed on the substrate, and in the middle of this substrate is placed a microwave transistor 4, and each electrode terminal is connected to the chamber 1 and the line 3. Subsequently from bias stays 5 provided at both outsides of the configuration a bias voltage and an RF signal are applied to the transistor 4 and the characteristics of the transistor 4 for microwave is measured. And for the puroose of setting the impedance of the measuring system to be 50OMEGA, the relation between the width W of the line 3 and the thickness t is taken to be W=t. In this constitution a high impedance line 6 is led from the middle of the line 3, and by capacitor 7 and a resistor connected at its tip, the low frequency oscillation is suppressed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP250081A JPS57115852A (en) | 1981-01-10 | 1981-01-10 | Microwave transistor mount |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP250081A JPS57115852A (en) | 1981-01-10 | 1981-01-10 | Microwave transistor mount |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57115852A true JPS57115852A (en) | 1982-07-19 |
Family
ID=11531073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP250081A Pending JPS57115852A (en) | 1981-01-10 | 1981-01-10 | Microwave transistor mount |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57115852A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4612566A (en) * | 1983-11-30 | 1986-09-16 | Alps Electric Co., Ltd. | Microwave transistor mounting structure |
US4841353A (en) * | 1984-07-10 | 1989-06-20 | Nec Corporation | Transistor devices for microwave oscillator elements |
EP0334273A2 (en) * | 1988-03-23 | 1989-09-27 | CSELT Centro Studi e Laboratori Telecomunicazioni S.p.A. | A fixture for measuring the static characteristics of microwave 3-terminal active components |
EP0725441A2 (en) * | 1995-01-31 | 1996-08-07 | Hughes Aircraft Company | Microwave monolithic integrated circuit package with improved RF ports |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5365613A (en) * | 1976-11-24 | 1978-06-12 | Fujitsu Ltd | Bias circuit |
-
1981
- 1981-01-10 JP JP250081A patent/JPS57115852A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5365613A (en) * | 1976-11-24 | 1978-06-12 | Fujitsu Ltd | Bias circuit |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4612566A (en) * | 1983-11-30 | 1986-09-16 | Alps Electric Co., Ltd. | Microwave transistor mounting structure |
US4841353A (en) * | 1984-07-10 | 1989-06-20 | Nec Corporation | Transistor devices for microwave oscillator elements |
EP0334273A2 (en) * | 1988-03-23 | 1989-09-27 | CSELT Centro Studi e Laboratori Telecomunicazioni S.p.A. | A fixture for measuring the static characteristics of microwave 3-terminal active components |
EP0725441A2 (en) * | 1995-01-31 | 1996-08-07 | Hughes Aircraft Company | Microwave monolithic integrated circuit package with improved RF ports |
EP0725441A3 (en) * | 1995-01-31 | 1998-10-21 | Hughes Aircraft Company | Microwave monolithic integrated circuit package with improved RF ports |
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