JPS57114268A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57114268A JPS57114268A JP56000442A JP44281A JPS57114268A JP S57114268 A JPS57114268 A JP S57114268A JP 56000442 A JP56000442 A JP 56000442A JP 44281 A JP44281 A JP 44281A JP S57114268 A JPS57114268 A JP S57114268A
- Authority
- JP
- Japan
- Prior art keywords
- capacitance element
- type
- mos
- mos capacitance
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010410 layer Substances 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
Landscapes
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce the area of an MOS capacitance element and to obtain a semiconductor device reduced in its chip size by forming a conductor layer via an insulating layer on the element and forming a parallel capacitor with the element. CONSTITUTION:An N<-> type epitaxial layer 3 is grown via an N<+> type buried layer 3 on a P type Si substrate 1, and is isolated into element via P<+> type isolation diffused region 4. An aluminum electrode 10 is covered via a thin SiO2 film 9 on an N<+> type diffused region 8 diffused simultaneously with an emitter 6 in capacitance element, and an ordinary MOS capacitor is formed. Further, an aluminum electrode 12 is formed on an MOS capacitance element, and is connected through the through hole of an interlayer insulating film 11 to the aluminum wire 13 of the MOS capacitance element. Accordingly, since a parallel capacitance is formed in the MOS capacitance element, the area of the MOS capacitance element can be reduced to reduce the chip size, and to improve the integration of the chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56000442A JPS57114268A (en) | 1981-01-07 | 1981-01-07 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56000442A JPS57114268A (en) | 1981-01-07 | 1981-01-07 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57114268A true JPS57114268A (en) | 1982-07-16 |
Family
ID=11473913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56000442A Pending JPS57114268A (en) | 1981-01-07 | 1981-01-07 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57114268A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198753A (en) * | 1983-12-13 | 1985-10-08 | フェアチャイルド セミコンダクタ コーポレーション | Method and device for reducing signal transmitting loss in super lsi integrated circuit |
| JPH03283459A (en) * | 1990-03-30 | 1991-12-13 | Hitachi Ltd | Semiconductor integrated circuit device |
-
1981
- 1981-01-07 JP JP56000442A patent/JPS57114268A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198753A (en) * | 1983-12-13 | 1985-10-08 | フェアチャイルド セミコンダクタ コーポレーション | Method and device for reducing signal transmitting loss in super lsi integrated circuit |
| JPH03283459A (en) * | 1990-03-30 | 1991-12-13 | Hitachi Ltd | Semiconductor integrated circuit device |
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