JPS5550653A - Resistance-capacity parallel connecting body - Google Patents
Resistance-capacity parallel connecting bodyInfo
- Publication number
- JPS5550653A JPS5550653A JP12324778A JP12324778A JPS5550653A JP S5550653 A JPS5550653 A JP S5550653A JP 12324778 A JP12324778 A JP 12324778A JP 12324778 A JP12324778 A JP 12324778A JP S5550653 A JPS5550653 A JP S5550653A
- Authority
- JP
- Japan
- Prior art keywords
- region
- connecting body
- film
- resistance
- conduction type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
PURPOSE: To make the device suitable in use for a transistor with uniform thermal distribution, by making action by means of a single power source by forming a parallel connecting body of resistances and a condenser by building up a low resistance region to one portion of a high resistance semiconductor, by covering the whole region with an insulating film and by coating the whole with electrode metal.
CONSTITUTION: The same conduction type high resistance layer 25 is grown on one conduction type low resistance Si substrate 24 in an epitaxial shape, and a low resistance region 26 is made up by diffusing the same conduction type impurities to the center portion. An insulating film 27 is grown only on the region 26, and an oxide film 29 is installed among the region 26 and the high resistance layers 25 located at the both sides at the same time, thus separating the region 26. The whole surface is coated with a conductive film 28, and a parallel connecting body employing the regions 25 as resistances and the film 27 as a condenser is produced between the film 28 and the substrate 24. The ratio of impedance of resistance and capacity in frequency used at that time is prescribed not more than 10∼1. The connecting body 39 manufactured in this way is brazed to a conductive stem 33 of a vessel with a FET chip 40.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12324778A JPS5550653A (en) | 1978-10-05 | 1978-10-05 | Resistance-capacity parallel connecting body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12324778A JPS5550653A (en) | 1978-10-05 | 1978-10-05 | Resistance-capacity parallel connecting body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5550653A true JPS5550653A (en) | 1980-04-12 |
Family
ID=14855843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12324778A Pending JPS5550653A (en) | 1978-10-05 | 1978-10-05 | Resistance-capacity parallel connecting body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5550653A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4747843B2 (en) * | 2003-10-21 | 2011-08-17 | セイコーエプソン株式会社 | Check valve, pump with check valve |
-
1978
- 1978-10-05 JP JP12324778A patent/JPS5550653A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4747843B2 (en) * | 2003-10-21 | 2011-08-17 | セイコーエプソン株式会社 | Check valve, pump with check valve |
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