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JPS57112079A - Field-effect semiconductor device - Google Patents

Field-effect semiconductor device

Info

Publication number
JPS57112079A
JPS57112079A JP55187304A JP18730480A JPS57112079A JP S57112079 A JPS57112079 A JP S57112079A JP 55187304 A JP55187304 A JP 55187304A JP 18730480 A JP18730480 A JP 18730480A JP S57112079 A JPS57112079 A JP S57112079A
Authority
JP
Japan
Prior art keywords
layer
fet
insulating
region
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55187304A
Other languages
Japanese (ja)
Inventor
Yasuo Nemoto
Satoru Shibata
Masumi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187304A priority Critical patent/JPS57112079A/en
Publication of JPS57112079A publication Critical patent/JPS57112079A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To protect an active layer and keep the charactaristic stable by a method wherein a surface of a n-type active layer between a gate electrode and a source-driain electrode of a GaAs Schottky gate type FET is covered by a GaAlAs layer which is thick enough to be insulating. CONSTITUTION:Liquid phase epitaxial growth of a n-type active layer 12 and, for instance, a Ga0.7Al0.3As layer 17 which the thickness large enough (approximately 1,000Angstrom ) to make the layer 17 practically insulating is made on a semi- insulating GaAs substrate 11 with a buffer layer in between. Then after an element region is determined by mesa etching, electrodes 14, 15 of, for instance An-Ge are formed and after thermal processing an alloy layer 16 is formed. Or after an impurity is injected into a source-drain region electrodes 14, 15 are formed. Then the layer 17 of the gate region is removed and an Al gate electrode 13 is formed and a FET is composed. With above method, a passivation composition which does not produce boundary level or something like that in the active region, so that a FET in which the drift of the characteristics hardly occurs and which has low noise level can be obtained.
JP55187304A 1980-12-29 1980-12-29 Field-effect semiconductor device Pending JPS57112079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55187304A JPS57112079A (en) 1980-12-29 1980-12-29 Field-effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187304A JPS57112079A (en) 1980-12-29 1980-12-29 Field-effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS57112079A true JPS57112079A (en) 1982-07-12

Family

ID=16203651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187304A Pending JPS57112079A (en) 1980-12-29 1980-12-29 Field-effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS57112079A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998559A (en) * 1982-11-27 1984-06-06 Matsushita Electric Ind Co Ltd Field effect transistor
JPS59172728A (en) * 1983-03-22 1984-09-29 Fujitsu Ltd semiconductor equipment
JPS6037784A (en) * 1983-08-10 1985-02-27 Matsushita Electric Ind Co Ltd Field effect transistor
JPS60261985A (en) * 1984-06-08 1985-12-25 Shipbuild Res Assoc Japan Air venting device for free piston pump for pumping slurry
US4888626A (en) * 1985-03-07 1989-12-19 The United States Of America As Represented By The Secretary Of The Navy Self-aligned gaas fet with low 1/f noise
JPH02185042A (en) * 1989-01-11 1990-07-19 Nec Corp Field-effect transistor and manufacture thereof
US5159414A (en) * 1989-10-30 1992-10-27 Mitsubishi Denki Kabushiki Kaisha Junction field effect transistor of a compound semiconductor
US5242846A (en) * 1989-10-30 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a junction field effect transistor
EP0642174A1 (en) * 1993-08-03 1995-03-08 Sumitomo Electric Industries, Ltd. MESFET with low ohmic resistance

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503786A (en) * 1973-05-16 1975-01-16
JPS5122375A (en) * 1974-08-19 1976-02-23 Matsushita Electric Ind Co Ltd Gaas shotsutokishohekidaioodono seizohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503786A (en) * 1973-05-16 1975-01-16
JPS5122375A (en) * 1974-08-19 1976-02-23 Matsushita Electric Ind Co Ltd Gaas shotsutokishohekidaioodono seizohoho

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998559A (en) * 1982-11-27 1984-06-06 Matsushita Electric Ind Co Ltd Field effect transistor
JPS59172728A (en) * 1983-03-22 1984-09-29 Fujitsu Ltd semiconductor equipment
JPS6037784A (en) * 1983-08-10 1985-02-27 Matsushita Electric Ind Co Ltd Field effect transistor
JPS60261985A (en) * 1984-06-08 1985-12-25 Shipbuild Res Assoc Japan Air venting device for free piston pump for pumping slurry
JPH0243916B2 (en) * 1984-06-08 1990-10-02 Nippon Zosen Kenkyu Kyokai
US4888626A (en) * 1985-03-07 1989-12-19 The United States Of America As Represented By The Secretary Of The Navy Self-aligned gaas fet with low 1/f noise
JPH02185042A (en) * 1989-01-11 1990-07-19 Nec Corp Field-effect transistor and manufacture thereof
US5159414A (en) * 1989-10-30 1992-10-27 Mitsubishi Denki Kabushiki Kaisha Junction field effect transistor of a compound semiconductor
US5242846A (en) * 1989-10-30 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a junction field effect transistor
EP0642174A1 (en) * 1993-08-03 1995-03-08 Sumitomo Electric Industries, Ltd. MESFET with low ohmic resistance

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