[go: up one dir, main page]

JPS5710270A - Semiconductor capacitor type pressure sensor - Google Patents

Semiconductor capacitor type pressure sensor

Info

Publication number
JPS5710270A
JPS5710270A JP8294480A JP8294480A JPS5710270A JP S5710270 A JPS5710270 A JP S5710270A JP 8294480 A JP8294480 A JP 8294480A JP 8294480 A JP8294480 A JP 8294480A JP S5710270 A JPS5710270 A JP S5710270A
Authority
JP
Japan
Prior art keywords
substrate
capacitance
concave notch
notch part
cap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8294480A
Other languages
Japanese (ja)
Other versions
JPS6154266B2 (en
Inventor
Satoshi Shimada
Motohisa Nishihara
Kazuji Yamada
Kazuo Kato
Masanori Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8294480A priority Critical patent/JPS5710270A/en
Publication of JPS5710270A publication Critical patent/JPS5710270A/en
Publication of JPS6154266B2 publication Critical patent/JPS6154266B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To eliminate the influence of temperature on a semiconductor capacitor type pressure sensor by a method wherein an amplifier is provided at a part of the upper face of an Si substrate, and a concave notch part at another part, capacitor electrodes are provided on the face of an insulating cap to be joined to the substrate facing with the concave notch part, and pressure is detected and amplified as electric capacity. CONSTITUTION:B ions are made to diffuse in a part of the Si substrate 20 to provide an IC amplifier 21, and another part of the substrate is etched with alkali to form the concave notch part 22. An oxide film 23 and a polycrystalline Si layer 24 are formed in order on the whole surface of the substrate excluding the concave notch part 22, and the cap 25 consisted of Pyrex glass is adhered on the polycrystalline Si layer 24 to seal. The electrodes 27, 28 are provided on the face of the cap 25 facing with the concave notch part to form capacitance between substrate 20, deformation of the substrate 20 by pressure A is detected as capacitance, and is amplified to be outputted to outside terminals 36, 37. Accordingly because no component of P-N junction capacitance is contained in the detected value of capacitance, variation of capacitance to be caused by the circumferential temperature can be reduced, and the sensor having high accuracy can be obtained.
JP8294480A 1980-06-20 1980-06-20 Semiconductor capacitor type pressure sensor Granted JPS5710270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8294480A JPS5710270A (en) 1980-06-20 1980-06-20 Semiconductor capacitor type pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8294480A JPS5710270A (en) 1980-06-20 1980-06-20 Semiconductor capacitor type pressure sensor

Publications (2)

Publication Number Publication Date
JPS5710270A true JPS5710270A (en) 1982-01-19
JPS6154266B2 JPS6154266B2 (en) 1986-11-21

Family

ID=13788319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8294480A Granted JPS5710270A (en) 1980-06-20 1980-06-20 Semiconductor capacitor type pressure sensor

Country Status (1)

Country Link
JP (1) JPS5710270A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59206567A (en) * 1983-05-09 1984-11-22 富士重工業株式会社 Keyless entry apparatus
JPS6016681A (en) * 1983-07-08 1985-01-28 富士重工業株式会社 Keyless entry apparatus of car
JPH01253627A (en) * 1988-04-01 1989-10-09 Res Dev Corp Of Japan Pressure sensor and manufacture thereof
US5041900A (en) * 1987-08-06 1991-08-20 Hamilton Standard Controls, Inc. Semiconductor device having sealed electrical feedthrough
US5072288A (en) * 1989-02-21 1991-12-10 Cornell Research Foundation, Inc. Microdynamic release structure
US5149673A (en) * 1989-02-21 1992-09-22 Cornell Research Foundation, Inc. Selective chemical vapor deposition of tungsten for microdynamic structures
JPH06201504A (en) * 1993-11-22 1994-07-19 Nissan Motor Co Ltd Manufacture of semiconductor dynamical amount sensor
US5406108A (en) * 1992-11-17 1995-04-11 Sumitomo Electric Industries, Ltd. Interconnection construction of semiconductor device
US5596219A (en) * 1994-05-25 1997-01-21 Siemens Aktiengesellschaft Thermal sensor/actuator in semiconductor material
JP2015087131A (en) * 2013-10-28 2015-05-07 国立大学法人東北大学 Sensor device and manufacturing method thereof

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59206567A (en) * 1983-05-09 1984-11-22 富士重工業株式会社 Keyless entry apparatus
JPS6016681A (en) * 1983-07-08 1985-01-28 富士重工業株式会社 Keyless entry apparatus of car
US5041900A (en) * 1987-08-06 1991-08-20 Hamilton Standard Controls, Inc. Semiconductor device having sealed electrical feedthrough
JPH01253627A (en) * 1988-04-01 1989-10-09 Res Dev Corp Of Japan Pressure sensor and manufacture thereof
US5072288A (en) * 1989-02-21 1991-12-10 Cornell Research Foundation, Inc. Microdynamic release structure
US5149673A (en) * 1989-02-21 1992-09-22 Cornell Research Foundation, Inc. Selective chemical vapor deposition of tungsten for microdynamic structures
US5406108A (en) * 1992-11-17 1995-04-11 Sumitomo Electric Industries, Ltd. Interconnection construction of semiconductor device
JPH06201504A (en) * 1993-11-22 1994-07-19 Nissan Motor Co Ltd Manufacture of semiconductor dynamical amount sensor
US5596219A (en) * 1994-05-25 1997-01-21 Siemens Aktiengesellschaft Thermal sensor/actuator in semiconductor material
EP0684462A3 (en) * 1994-05-25 1997-05-07 Siemens Ag Sensor / actuator made of semiconductor material.
JP2015087131A (en) * 2013-10-28 2015-05-07 国立大学法人東北大学 Sensor device and manufacturing method thereof

Also Published As

Publication number Publication date
JPS6154266B2 (en) 1986-11-21

Similar Documents

Publication Publication Date Title
US6236096B1 (en) Structure of a three-electrode capacitive pressure sensor
KR880011943A (en) Manufacturing Method of Semiconductor Absolute Pressure Sensor
JPS5544786A (en) Pressure sensor
GB9401409D0 (en) Absolute pressure sensor
JPS5710270A (en) Semiconductor capacitor type pressure sensor
GB2036425A (en) Semiconductor pressure sensor having a plurality of pressure-sensitive diaphragms and method of manufacturing the same
JPS58197780A (en) semiconductor pressure transducer
EP0127176A3 (en) Integrated pressure sensor
ES353655A1 (en) Electrodes for the measurement of ph values under pressure
KR950009246A (en) UV detection sensor
JPS645075A (en) Semiconductor pressure sensor and manufacture of the same
JPS56142432A (en) Electrostatic capacitance type pressure sensor
JPS55122125A (en) Semiconductor pressure detector
JPS6148794B2 (en)
JPS63175482A (en) Pressure sensor
GB1129272A (en) Improvements in and relating to metal-oxide-semiconductor capacitors
JP2641926B2 (en) Capacitive pressure sensor
JPS5536713A (en) Semiconductor strain gauge type absolute pressure sensor
JPS57204176A (en) Semiconductor pressure converter
JPS6252952U (en)
JPS57147286A (en) Photodetector element and manufacture thereof
JPS56131267A (en) Solid image pickup device
JPS5694767A (en) Semiconductor device
JPS5717188A (en) Semiconductor light-emitting element
SE7808751L (en) BATTERY-POWERED IONIZATION ROCKER UNIT