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JPS5693324A - Defect amendment of photomask - Google Patents

Defect amendment of photomask

Info

Publication number
JPS5693324A
JPS5693324A JP16972179A JP16972179A JPS5693324A JP S5693324 A JPS5693324 A JP S5693324A JP 16972179 A JP16972179 A JP 16972179A JP 16972179 A JP16972179 A JP 16972179A JP S5693324 A JPS5693324 A JP S5693324A
Authority
JP
Japan
Prior art keywords
pin hole
laser beam
photomask
amended
defect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16972179A
Other languages
Japanese (ja)
Inventor
Shiyougo Yoshikawa
Ryuji Tatsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16972179A priority Critical patent/JPS5693324A/en
Publication of JPS5693324A publication Critical patent/JPS5693324A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To enable the amendment of pin hole in a photomask extremely easily by a method wherein the pattern material at the circumferential part of the pin hole defect is molten by irradiating the minute part containing the defect part to be amended on the substrate with the laser beam. CONSTITUTION:A laser beam generating source 4 is arranged at the position confronting with the pin hole 3 to be amended in the photomask 10. The laser beam 5 radiated from the generating source 4 irradiates the minute region 6 of the pattern part 2 containing the pin hole 3. The pattern material at the region irradiated with the laser beam 5 is molten, and flows into the pin hole 3. As a result, the pattern part 2 wherein the pin hole 3 exist generates an opaque region 3'. Accordingly the pin hole can be amended extremely easily without necessitating to adhere a new material.
JP16972179A 1979-12-26 1979-12-26 Defect amendment of photomask Pending JPS5693324A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16972179A JPS5693324A (en) 1979-12-26 1979-12-26 Defect amendment of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16972179A JPS5693324A (en) 1979-12-26 1979-12-26 Defect amendment of photomask

Publications (1)

Publication Number Publication Date
JPS5693324A true JPS5693324A (en) 1981-07-28

Family

ID=15891618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16972179A Pending JPS5693324A (en) 1979-12-26 1979-12-26 Defect amendment of photomask

Country Status (1)

Country Link
JP (1) JPS5693324A (en)

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