JPS568841A - Measuring method of micro probe deep level - Google Patents
Measuring method of micro probe deep levelInfo
- Publication number
- JPS568841A JPS568841A JP8516079A JP8516079A JPS568841A JP S568841 A JPS568841 A JP S568841A JP 8516079 A JP8516079 A JP 8516079A JP 8516079 A JP8516079 A JP 8516079A JP S568841 A JPS568841 A JP S568841A
- Authority
- JP
- Japan
- Prior art keywords
- deep level
- variations
- deltac
- cryostat
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To enable the easy measurement of deep level of a semiconductor without the formation of crystal defect by a method wherein light pulses obtained from a laser beam are applied to the semiconductor, and the difference between two transient capacities of p-n junction at two optional times is detected. CONSTITUTION:A laser beam generated in a laser source 1 of krypton ion laser, etc., is converted into light pulses through a mechanical chopper or an ultrasonic wave modulator 2, the diameter of pulses are downed by lenses 3, 4 and are applied through an optical window 7 on the face of a sample 5 arranged in a cryostat 6. Generated transient response variations of p-n junction capacity in the sample as time goes by are applied to a capacitance meter 8, and variations DELTAC are detected by a difference meter 9 to send for a CRT device 12. Transferring minutely the cryostat 6 at this time with an XY transferring table 10, voltage 11 proportional to the variations DELTAC can be obtained. Using the result, the luminance of device 12 is modulated to display the space distribution of deep level values.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8516079A JPS568841A (en) | 1979-07-04 | 1979-07-04 | Measuring method of micro probe deep level |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8516079A JPS568841A (en) | 1979-07-04 | 1979-07-04 | Measuring method of micro probe deep level |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS568841A true JPS568841A (en) | 1981-01-29 |
Family
ID=13850911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8516079A Pending JPS568841A (en) | 1979-07-04 | 1979-07-04 | Measuring method of micro probe deep level |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS568841A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5922337A (en) * | 1982-07-28 | 1984-02-04 | Fujitsu Ltd | Valuation of electrically interfacial conduction |
| JPS59114834A (en) * | 1982-12-21 | 1984-07-03 | Agency Of Ind Science & Technol | Method for measuring deep impurity level or crystal defect level contained in semiconductor device |
| JPH03217037A (en) * | 1990-01-22 | 1991-09-24 | Nec Corp | Measuring apparatus for semiconductor element |
| CN100449305C (en) * | 2004-12-09 | 2009-01-07 | 中国科学院半导体研究所 | An Optical Transient Automatic Test System |
-
1979
- 1979-07-04 JP JP8516079A patent/JPS568841A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5922337A (en) * | 1982-07-28 | 1984-02-04 | Fujitsu Ltd | Valuation of electrically interfacial conduction |
| JPS59114834A (en) * | 1982-12-21 | 1984-07-03 | Agency Of Ind Science & Technol | Method for measuring deep impurity level or crystal defect level contained in semiconductor device |
| JPH03217037A (en) * | 1990-01-22 | 1991-09-24 | Nec Corp | Measuring apparatus for semiconductor element |
| CN100449305C (en) * | 2004-12-09 | 2009-01-07 | 中国科学院半导体研究所 | An Optical Transient Automatic Test System |
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